Single photon device, apparatus for emitting and transferring single photon, and methods of manufacturing and operating the same

Patent metadata

Field	Value
Publication number	US-9595569-B2
Application number	US-201414310435-A
Country	US
Kind code	B2
Filing date	Jun 20, 2014
Priority date	Jun 20, 2013
Publication date	Mar 14, 2017
Grant date	Mar 14, 2017

Abstract

Provided are single photon devices, single photon emitting and transferring apparatuses, and methods of manufacturing and operating the single photon devices. The single photon device includes a carrier transport layer disposed on a conductive substrate and at least one quantum dot disposed on the carrier transport layer. A single photon emitting and transferring apparatus includes a single photon device, an element that injects a single charge into the single photon device described above, a light collecting unit that collects light emitted from the single photon device, and a light transfer system that transmits light collected by the light collecting unit to the outside.

First claim

What is claimed is:

1. A single photon-emitting and transferring apparatus comprising:
a single photon device;
an element that injects a single charge into the single photon device;
a light collecting unit that collects light emitted from the single photon device; and
a light transfer system that transmits the light collected by the light collecting unit externally,
wherein the single photon device comprises:
a substrate;
a carrier transport layer disposed on the substrate; and
at least one quantum dot disposed on the carrier transport layer,
wherein the carrier transport layer is disposed between the at least one quantum dot and the substrate; and
wherein the single photon device and the element that injects the single charge into the single photon device are arranged such that the single charge is emitted directly into the at least one quantum dot in the single photon device.

2. The single photon emitting and transferring apparatus of claim 1 , wherein the element that injects the single charge is a scanning tunneling microscope tip.

3. The single photon emitting and transferring apparatus of claim 1 , wherein the light transfer system is an optical fiber.

4. The single photon emitting and transferring apparatus of claim 1 , wherein the carrier transport layer is a hole transport layer.

5. The single photon emitting and transferring apparatus of claim 4 , wherein the hole transport layer is one of a poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(4-sec-butylphenyl))diphenylamine (TFB) layer, a N,N′-diphenyl-N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′diamine (TPD) layer, a polyvinylcarbazole (PVK) layer, a p-TPD layer, an inorganic p-type oxide layer, and an inorganic p-type semiconductor layer.

6. The single photon emitting and transferring apparatus of claim 5 , wherein the hole transport layer is an NiO layer.

7. The single photon emitting and transferring apparatus of claim 5 , wherein the hole transport layer is a CuS layer or a ZnTe layer.

8. A method of operating a single photon device that comprises a conductive substrate and at least one quantum dot, the method comprising:
injecting from an STM tip a single charge directly into the at least one quantum dot; and
injecting a hole into the at least one quantum dot through a carrier transport layer,
wherein the carrier transport layer is interposed between the conductive substrate and the quantum dot.

9. The method of claim 8 , wherein the injecting of the single charge and the single hole into the at least one quantum dot comprises:
placing the STM tip above the at least one quantum dot; and
injecting the single charge and the single hole into the at least one quantum dot by applying a voltage between the STM tip and the conductive substrate.

10. The method of claim 8 , wherein the carrier transport layer is one of poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(4-sec-butylphenyl))diphenylamine (TFB) layer, a N,N′-diphenyl-N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′diamine (TPD) layer, a polyvinylcarbazole (PVK) layer, a p-TPD layer, an inorganic p-type oxide layer, and an inorganic p-type semiconductor layer.

11. The method of claim 8 , wherein the at least one quantum dot is included in a quantum dot film that is formed on the carrier transport layer.

12. The single photon-emitting and transferring apparatus of claim 4 , wherein the hole transport layer is an NiO layer, a CuS layer, or a ZnTe layer.

13. The single photon-emitting and transferring apparatus of claim 4 , wherein an element of the single photon device that is closest to the element that injects a single charge into the single photon device is the at least one quantum dot disposed on the hole transport layer.

14. The single photon emitting and transferring apparatus of claim 4 , wherein the hole transport layer is one of a poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(4-sec-butylphenyl))diphenylamine (TFB) layer, a N,N′-diphenyl-N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′diamine (TPD) layer, a polyvinylcarbazole (PVK) layer, and a p-TPD layer.

15. The method of claim 8 , wherein the carrier transport layer is one of poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(4-sec-butylphenyl))diphenylamine (TFB) layer, a N,N′-diphenyl-N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′diamine (TPD) layer, a polyvinylcarbazole (PVK) layer, and a p-TPD layer.

Assignees

• Samsung Electronics Co Ltd
• Univ Seoul Nat R & Db Found

Inventors

• Cho Kyung-Sang
• Kuk Young
• Lim Seong-Joon
• Choi Byoung-Iyong

Classifications

• H10K39/30

  Devices controlled by radiation · CPC title

• H04B10/70 Primary

  Photonic quantum communication · CPC title

• H01L27/305 Primary

  Electricity · mapped topic

• H01L27/32

  Electricity · mapped topic

• H01L51/006

  Electricity · mapped topic