Semiconductor composite film with heterojunction and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9590049-B2
Application number	US-201514966818-A
Country	US
Kind code	B2
Filing date	Dec 11, 2015
Priority date	Dec 7, 2012
Publication date	Mar 7, 2017
Grant date	Mar 7, 2017

Abstract

The present invention discloses a semiconductor composite film with a heterojunction and a manufacturing method thereof. The semiconductor composite film includes: a semiconductor substrate; and a semiconductor epitaxial layer, which is formed on the semiconductor substrate, and it has a first surface and a second surface opposite to each other, wherein the heterojunction is formed between the first surface and the semiconductor substrate, and wherein the semiconductor epitaxial layer further includes at least one recess, which is formed by etching the semiconductor epitaxial layer from the second surface toward the first surface. The recess is for mitigating a strain in the semiconductor composite film.

First claim

What is claimed is:

1. A method of manufacturing semiconductor composite film with a heterojunction, comprising:
providing a semiconductor substrate;
forming a semiconductor epitaxial layer on the semiconductor substrate, the semiconductor epitaxial layer having a first surface and a second surface opposite to each other, wherein the heterojunction is formed between the first surface and the semiconductor substrate; and
forming at least one recess from the second surface inwardly toward the first surface by etching the semiconductor epitaxial layer from the second surface toward the first surface, for mitigating a strain in the semiconductor composite film.

2. The method of claim 1 , further comprising: forming at least one semiconductor device in or which includes the semiconductor epitaxial layer.

3. The method of claim 1 , wherein the recess has a bottom, and the recess penetrates the semiconductor epitaxial layer such that the bottom is in the semiconductor substrate.

4. The method of claim 1 , wherein the recess has a bottom, and the bottom is substantially on the same plane as the heterojunction.

5. The method of claim 1 , further comprising: forming at least one semiconductor device in or which includes the semiconductor epitaxial layer, and the recess does overlap with the semiconductor device.

Assignees

• Su Hung-Der
• Chiu Chien-Wei
• Huang Tsung-Yi
• Richtek Technology Corp

Inventors

• Su Hung-Der
• Chiu Chien-Wei
• Huang Tsung-Yi

Classifications

• H10P50/646

  of Group III-V materials · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/2921 Primary

  being crystalline insulating materials · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title