Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer

Patent metadata

Field	Value
Publication number	US-9590010-B1
Application number	US-201615079634-A
Country	US
Kind code	B1
Filing date	Mar 24, 2016
Priority date	Mar 24, 2016
Publication date	Mar 7, 2017
Grant date	Mar 7, 2017

Abstract

Perpendicular magnetic tunnel junction (pMTJ) devices employing a pinned layer stack with a thin top anti-parallel (AP2) layer and having a transitioning layer providing a transitioning start to a body-centered cubic (BCC) crystalline/amorphous structure below the top anti-parallel (AP2) layer, to promote a high tunnel magnetoresistance ratio (TMR) with reduced pinned layer thickness are disclosed. A first anti-parallel (AP) ferromagnetic (AP1) layer in a pinned layer has a face-centered cubic (FCC) or hexagonal closed packed (HCP) crystalline structure. A transitioning material (e.g., Iron (Fe)) is provided in a transitioning layer between the AP1 layer and an AFC layer (e.g., Chromium (Cr)) that starts a transition from a FCC or HCP crystalline structure, to a BCC crystalline/amorphous structure. In this manner, a second AP ferromagnetic (AP2) layer disposed on the AFC layer can be provided in a reduced thickness BCC crystalline or amorphous structure to provide a high TMR with a reduced pinned layer thickness.

First claim

What is claimed is:

1. A perpendicular magnetic tunnel junction (pMTJ), comprising:
a bottom electrode and a top electrode;
a pinned layer disposed between the bottom electrode and the top electrode;
a free layer disposed between the pinned layer and the top electrode; and
a tunnel barrier layer disposed between the pinned layer and the free layer, the tunnel barrier layer configured to provide a tunnel magnetoresistance between the pinned layer and the free layer;
the pinned layer comprising a synthetic anti-ferromagnetic (SAF) structure, comprising:
a first anti-parallel (AP) layer having a first reference magnetic orientation, the first AP layer comprising a face-centered cubic (FCC) or hexagonal closed packed (HCP) crystalline structure material;
an anti-ferromagnetic coupling (AFC) layer disposed above the first AP layer;
a second AP layer disposed above the AFC layer, the second AP layer having a second reference magnetic orientation opposite of the first reference magnetic orientation, the second AP layer comprising a body-centered cubic (BCC) crystalline or amorphous structure; and
a transitioning layer disposed below the second AP layer, in the first AP layer as an interface between the first AP layer and the AFC layer to provide a transitioning start to the BCC crystalline or amorphous structure of the second AP layer.

2. The pMTJ of claim 1 , wherein the transitioning layer is disposed as a last layer of the first AP layer adjacent to the AFC layer.

3. The pMTJ of claim 1 , wherein the transitioning layer is comprised of Iron (Fe).

4. The pMTJ of claim 1 , wherein the transitioning layer is comprised of a BCC crystalline structure material.

5. The pMTJ of claim 1 , wherein the AFC layer is comprised of Chromium (Cr).

6. The pMTJ of claim 1 , wherein the AFC layer is comprised of a BCC crystalline structure material.

7. The pMTJ of claim 1 , wherein the second AP layer comprises a Cobalt (Co)-Iron (Fe)-Boron (B) (CoFeB) material.

8. The pMTJ of claim 1 , wherein the second AP layer comprises a BCC crystalline structure material.

9. The pMTJ of claim 1 , wherein the second AP layer comprises an amorphous material.

10. The pMTJ of claim 1 , wherein the first AP layer comprises a Cobalt (Co) material and Platinum (Pt) material.

11. The pMTJ of claim 7 , wherein the first AP layer is comprised of at least one of a Co layer and at least one of a Platinum (Pt) layer.

12. The pMTJ of claim 1 , wherein the first AP layer comprises a face-centered cubic (FCC) crystalline structure material.

13. The pMTJ of claim 1 , wherein the first AP layer comprises a hexagonal closed packed (HCP) crystalline structure material.

14. The pMTJ of claim 1 , wherein:
the AFC layer is comprised of Cr;
the second AP layer comprises a CoFeB material; and
the tunnel barrier layer comprises Magnesium Oxide (MgO).

15. The pMTJ of claim 1 , wherein the AFC layer is one (1) nanometer (nm) or less in thickness.

16. The pMTJ of claim 1 , wherein the second AP layer is less than or equal to 1 nm in thickness.

17. The pMTJ of claim 1 , wherein the first AP layer is below four (4) nanometers (nm) in thickness.

18. The pMTJ of claim 1 integrated into an integrated circuit (IC).

19. The pMTJ of claim 1 integrated into a device selected from the group consisting of: a set top box; an entertainment unit; a navigation device; a communications device; a fixed location data unit; a mobile location data unit; a mobile phone; a cellular phone; a smart phone; a tablet; a phablet; a computer; a portable computer; a desktop computer; a personal digital assistant (PDA); a monitor; a computer monitor; a television; a tuner; a radio; a satellite radio; a music player; a digital music player; a portable music player; a digital video player; a video player; a digital video disc (DVD) player; a portable digital video player; and an automobile.

20. A method for forming a perpendicular magnetic tunnel junction (pMTJ), comprising:
providing a bottom electrode and a top electrode;
forming a pinned layer above the bottom electrode comprising forming a synthetic anti-ferromagnetic (SAF) structure above the bottom electrode, comprising:
forming a first anti-parallel (AP) layer having a first reference magnetic orientation and comprising a face-centered cubic (FCC) or hexagonal closed packed (HCP) crystalline structure material above the bottom electrode;
forming a transitioning layer within the first AP layer as an interface between the first AP layer and an anti-ferromagnetic coupling (AFC) layer to provide a transitioning start to a structure of a second AP layer;
forming the AFC layer above the transitioning layer; and
forming the second AP layer above the AFC layer, the second AP layer having a second reference magnetic orientation opposite of the first reference magnetic orientation, the second AP layer comprising a body-centered cubic (BCC) crystalline or amorphous structure; and

forming a tunnel barrier layer above the second AP layer, the tunnel barrier layer configured to provide a tunnel magnetoresistance between the pinned layer and a free layer; and
forming the free layer disposed above the pinned layer, between the pinned layer and the top electrode.

21. The method of claim 20 , comprising forming the transitioning layer as a last layer of the first AP layer adjacent to the AFC layer.

22. The method of claim 21 , wherein forming the transitioning layer comprises forming the transitioning layer comprising Iron (Fe) as the last layer of the first AP layer to provide the transitioning start to the structure of the second AP layer.

23. The method of claim 21 , wherein forming the transitioning layer comprises forming the transitioning layer comprising a BCC crystalline structure material as the last layer of the first AP layer to provide the transitioning start to the structure of the second AP layer.

24. The method of claim 20 , wherein forming the AFC layer comprises forming the AFC layer comprising Chromium (Cr) above the transitioning layer.

25. The method of claim 20 , wherein forming the second AP layer comprises forming a CoFeB material above the AFC layer.

26. A memory bit cell, comprising:
an access transistor having a gate, a source, and a drain; and
a perpendicular magnetic tunnel junction (pMTJ), comprising:
a bottom electrode and a top electrode;
a pinned layer disposed between the bottom electrode and the top electrode;
a free layer disposed between the pinned layer and the top electrode; and
a tunnel barrier layer disposed between the pinned layer and the free layer, the tunnel barrier layer configured to provide a tunnel magnetoresistance between the pinned layer and the free layer;
the pinned layer comprising a synthetic anti-ferromagnetic (SAF) structure, comprising:
a first anti-parallel (AP) layer having a first reference magnetic orientation, the first AP layer comprising a face-centered cubic (FCC) or hexagonal closed packed (HCP) crystalline structure material;
an anti-ferromagnetic coupling (AFC) layer disposed above the first AP layer;
a second AP layer disposed above the AFC layer, the second AP layer having a second reference magnetic orientation opposite of the first reference magnetic orientation, the second AP layer comprising a body-centered cubic (BCC) crystalline or amorphous structure; and
a transitioning layer disposed below the second AP layer, in the first AP layer

Assignees

• Qualcomm Inc

Inventors

• Gottwald Matthias Georg
• Kan Jimmy Jianan
• Park Chando
• Zhu Xiaochun
• Kang Seung Hyuk

Classifications

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/02

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic