Low voltage current reference generator for a sensing amplifier

Patent metadata

Field	Value
Publication number	US-9589630-B2
Application number	US-201314435251-A
Country	US
Kind code	B2
Filing date	Oct 3, 2013
Priority date	Oct 29, 2012
Publication date	Mar 7, 2017
Grant date	Mar 7, 2017

Abstract

The invention comprises a non-volatile memory device with a sensing amplifier that includes a current mirror comprising a pair of resistors.

First claim

What is claimed is:

1. An apparatus for use in a memory device, comprising:
a current mirror comprising a first resistor and a second resistor, the first resistor comprising a first terminal and second terminal and the second resistor comprising a first terminal and a second terminal;
a voltage source coupled to the first terminal of the first resistor and coupled to the first terminal of the second resistor;
a reference circuit coupled to the second terminal of the first resistor;
a PMOS transistor comprising a first terminal and a second terminal, wherein the first terminal of the PMOS transistor is coupled to the second terminal of the second resistor;
a selected memory cell coupled to the second terminal of the PMOS transistor;
wherein the second terminal of the PMOS transistor provides a voltage indicative of the value stored in the selected memory cell in response to a first current drawn by the reference circuit and a second current drawn by the selected memory cell.

2. The apparatus of claim 1 , wherein the voltage source provides a voltage of 1.0 volts or less.

3. The apparatus of claim 1 , wherein the selected memory cell is a floating gate memory cell.

4. The apparatus of claim 1 , wherein the reference circuit comprises a reference memory cell.

5. The apparatus of claim 4 , wherein the reference memory cell is a floating gate memory cell.

6. The apparatus of claim 4 , wherein the reference circuit comprises an operational amplifier.

7. The apparatus of claim 4 , wherein the reference circuit comprises an inverter.

8. The apparatus of claim 1 , wherein the reference circuit comprises a current source.

9. An apparatus for use in a memory device, comprising:
a first resistor, wherein a first terminal of the first resistor is coupled to a voltage source;
a reference circuit coupled to a second terminal of the first resistor;
a second resistor, wherein a first terminal of the second resistor is coupled to the voltage source;
an operational amplifier, wherein a positive input terminal of the operational amplifier is coupled to a second terminal of the first resistor and a negative input terminal of the operational amplifier is coupled to a second terminal of the second resistor;
a PMOS transistor comprising a first terminal, a second terminal, and a third terminal, wherein the first terminal of the PMOS transistor is coupled to a second terminal of the second resistor and the third terminal of the PMOS transistor is coupled to an output of the operational amplifier;
a selected memory cell coupled to the second terminal of the PMOS transistor;
wherein the drain of the PMOS transistor provides a voltage indicative of the value stored in the selected memory cell in response to a first current drawn by the reference circuit and a second current drawn by the selected memory cell.

10. The apparatus of claim 9 , wherein the voltage source provides a voltage of 1.0 volts or less.

11. The apparatus of claim 9 , wherein the selected memory cell is a floating gate memory cell.

12. The apparatus of claim 9 , wherein the reference circuit comprises a reference memory cell.

13. The apparatus of claim 12 , wherein the reference memory cell is a floating gate memory cell.

14. The apparatus of claim 12 , wherein the reference circuit comprises an operational amplifier.

15. The apparatus of claim 12 , wherein the reference circuit comprises an inverter.

16. The apparatus of claim 9 , wherein the reference circuit comprises a current source.

17. An apparatus for use in a memory device, comprising:
a first resistor, wherein a first terminal of the first resistor is coupled to a voltage source;
a reference circuit coupled to a second terminal of the first resistor;
a second resistor, wherein a first terminal of the second resistor is coupled to the voltage source;
an operational amplifier, wherein a positive input terminal of the operational amplifier is coupled to a second terminal of the first resistor and a negative input terminal of the operational amplifier is coupled to a second terminal of the second resistor;
a PMOS transistor, wherein a first terminal of the PMOS transistor is coupled to a second terminal of the second resistor and a third terminal of the PMOS transistor is coupled to an output of the operational amplifier;
a mirror pair block comprising a first terminal and second terminal, wherein the first terminal of the mirror pair block is coupled to the second terminal of the PMOS transistor and the second terminal of the mirror pair block is coupled to a selected memory cell;
an output port, coupled to the second terminal of the mirror pair block, that provides a voltage indicative of the value stored in the selected memory cell.

18. The apparatus of claim 17 , wherein the voltage source provides a voltage of 1.0 volts or less.

19. The apparatus of claim 17 , wherein the selected memory cell is a floating gate memory cell.

20. The apparatus of claim 17 , wherein the reference circuit comprises a reference memory cell.

21. The apparatus of claim 20 , wherein the reference memory cell is a floating gate memory cell.

22. The apparatus of claim 20 , wherein the reference circuit comprises an operational amplifier.

23. The apparatus of claim 20 , wherein the reference circuit comprises an inverter.

24. The apparatus of claim 17 , wherein the reference circuit comprises a current source.

Assignees

• Silicon Storage Tech Inc

Inventors

• Zhou Yao
• Qian Xiaozhou
• Lin Guangming

Classifications

• G11C7/062 Primary

  Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs · CPC title

• G11C5/147

  Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops (G11C5/141 takes precedence) · CPC title

• G11C7/12

  Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines · CPC title

• G11C16/28

  using differential sensing or reference cells, e.g. dummy cells · CPC title

• G11C11/5642 Primary

  Sensing or reading circuits; Data output circuits · CPC title