MEMS based photonic devices and methods for forming

Patent metadata

Field	Value
Publication number	US-9588293-B2
Application number	US-201514749806-A
Country	US
Kind code	B2
Filing date	Jun 25, 2015
Priority date	Jun 25, 2015
Publication date	Mar 7, 2017
Grant date	Mar 7, 2017

Abstract

Various particular embodiments include a primary waveguide including an end section; cantilevered waveguides, each cantilevered waveguide including an end section disposed adjacent the end section of the primary waveguide; and control pins for applying an electrical bias to the cantilevered waveguides to selectively displace the end sections of the cantilevered waveguides away from the end section of the primary waveguide.

First claim

The invention claimed is:

1. A cantilevered semiconductor waveguide structure, comprising:
a primary waveguide including an end section;
cantilevered waveguides, each cantilevered waveguide including an end section disposed adjacent the end section of the primary waveguide; and
control pins for applying an electrical bias to the cantilevered waveguides to selectively displace the end sections of the cantilevered waveguides away from the end section of the primary waveguide,
wherein the cantilevered semiconductor waveguide structure comprises a photonic splitter for splitting an optical signal provided via the primary waveguide between the cantilevered waveguides.

2. The cantilevered semiconductor waveguide structure according to claim 1 , wherein a function of the cantilevered semiconductor waveguide structure is selectively changeable from the photonic splitter to a photonic switch or a photonic fuse based on the electrical bias applied to the cantilevered waveguides.

3. The cantilevered semiconductor waveguide structure according to claim 1 , wherein the electrical bias is not applied to the end sections of any of the cantilevered waveguides, and wherein none of the end sections of the cantilevered waveguides are displaced away from the end section of the primary waveguide.

4. The cantilevered semiconductor waveguide structure according to claim 2 , wherein the function of the cantilevered semiconductor waveguide structure is selectively changed from the photonic splitter to the photonic switch by applying the electrical bias to the end section of at least one of the cantilevered waveguides to displace the end section of the at least one of the cantilevered waveguides away from the end section of the primary waveguide.

5. The cantilevered semiconductor waveguide structure according to claim 4 , wherein the displaced end section of the at least one of the cantilevered waveguides returns to an original position upon removal of the applied electrical bias.

6. The cantilevered semiconductor waveguide structure according to claim 1 , wherein the end sections of the cantilevered waveguides and the control pins comprise a fusable material for forming a permanent connection therebetween.

7. An optical circuit, comprising:
a plurality of cantilevered semiconductor waveguide structures, each cantilevered semiconductor waveguide structure comprising:
a primary waveguide including an end section;
cantilevered waveguides, each cantilevered waveguide including an end section disposed adjacent the end section of the primary waveguide; and
control pins for applying an electrical bias to the cantilevered waveguides to selectively displace the end sections of the cantilevered waveguides away from the end section of the primary waveguide;

wherein at least one of the cantilevered semiconductor waveguide structures is configured as a photonic splitter by not applying the electrical bias to the end sections of any of the cantilevered waveguides, wherein none of the end sections of the cantilevered waveguides are displaced away from the end section of the primary waveguide.

8. The optical circuit according to claim 7 , wherein at least one of the cantilevered semiconductor waveguide structures is configured as a photonic switch by:
applying the electrical bias to the end section of at least one of the cantilevered waveguides to displace the end section of the at least one of the cantilevered waveguides away from the end section of the primary waveguide.

9. The optical circuit according to claim 8 , wherein the displaced end section of the at least one of the cantilevered waveguides returns to an original position upon removal of the applied electrical bias.

10. The optical circuit according to claim 7 , wherein at least one of the cantilevered semiconductor waveguide structures is configured as a photonic fuse by:
applying the electrical bias to the end section of at least one of the cantilevered waveguides to permanently displace the end section of the at least one of the cantilevered waveguides away from the end section of the primary waveguide.

11. The optical circuit according to claim 10 , wherein the end sections of the cantilevered waveguides and the control pins of the at least one of the cantilevered semiconductor waveguide structures comprise a fusable material for forming a permanent connection therebetween.

12. A method for controlling a path of light in an optical circuit, comprising:
providing a cantilevered semiconductor waveguide structure in the optical circuit, the cantilevered semiconductor waveguide structure comprising:
a primary waveguide including an end section;
cantilevered waveguides, each cantilevered waveguide including an end section disposed adjacent the end section of the primary waveguide; and
control pins for applying an electrical bias to the cantilevered waveguides to selectively displace the end sections of the cantilevered waveguides away from the end section of the primary waveguide;

and
configuring the cantilevered semiconductor waveguide structure as a photonic splitter for splitting an optical signal provided via the primary waveguide between the cantilevered waveguides.

13. The method according to claim 12 , wherein configuring the cantilevered semiconductor waveguide structure as the photonic splitter further includes not applying the electrical bias to the end sections of any of the cantilevered waveguides, wherein none of the end sections of the cantilevered waveguides are displaced away from the end section of the primary waveguide.

14. The method according to claim 12 , wherein a function of the cantilevered semiconductor waveguide structure is selectively changeable from the photonic splitter to a photonic switch by applying the electrical bias is applied to the end section of at least one of the cantilevered waveguides to displace the end section of the at least one of the cantilevered waveguides away from the end section of the primary waveguide.

15. The method according to claim 14 , wherein the displaced end section of the at least one of the cantilevered waveguides returns to an original position upon removal of the applied electrical bias.

16. The method according to claim 12 , wherein a function of the cantilevered semiconductor waveguide structure is selectively changeable from the photonic splitter to a photonic fuse by applying the electrical bias to the end section of at least one of the cantilevered waveguides to permanently displace the end section of the at least one of the cantilevered waveguides away from the end section of the primary waveguide.

Assignees

• IBM

Inventors

• Ellis-Monaghan John J
• Harris Brendan S
• Jain Vibhor
• Kessler Thomas
• Ngu Yves T
• Ventrone Sebastian T

Classifications

• G02B6/357

  Electrostatic force (electrostatic forces controlling reflecting elements in general G02B26/0841) · CPC title

• G02B2006/12145

  Switch · CPC title

• G02B6/3502

  involving direct waveguide displacement, e.g. cantilever type waveguide displacement involving waveguide bending, or displacing an interposed waveguide between stationary waveguides · CPC title

• B81B2201/045

  Optical switches · CPC title

• G02B6/1225

  comprising photonic band-gap structures or photonic lattices · CPC title