Optical filter and sensor system

Patent metadata

Field	Value
Publication number	US-9588269-B2
Application number	US-201615158191-A
Country	US
Kind code	B2
Filing date	May 18, 2016
Priority date	Jul 16, 2012
Publication date	Mar 7, 2017
Grant date	Mar 7, 2017

Abstract

An optical filter having a passband at least partially overlapping with a wavelength range of 800 nm to 1100 nm is provided. The optical filter includes a filter stack formed of hydrogenated silicon layers and lower-refractive index layers stacked in alternation. The hydrogenated silicon layers each have a refractive index of greater than 3 over the wavelength range of 800 nm to 1100 nm and an extinction coefficient of less than 0.0005 over the wavelength range of 800 nm to 1100 nm.

First claim

We claim:

1. An optical filter, comprising:
a filter stack comprising:
a plurality of thin film hydrogenated silicon layers, wherein the plurality of thin film hydrogenated silicon layers have a refractive index of greater than 3 over a wavelength range of 800 nm to 1100 nm; and
a plurality of thin film dielectric lower-refractive-index layers, wherein the plurality of thin film dielectric lower-refractive-index layers have a refractive index of less than 3 over the wavelength range of 800 nm to 1100 nm, and wherein the plurality of thin film dielectric lower-refractive-index layers alternate, in a one-to-one ratio, with the plurality of thin film hydrogenated silicon layers; and

wherein the optical filter has exhibits interference that creates a passband at least partially overlapping with the wavelength range of 800 nm to 1100 nm,
wherein the passband has a center wavelength that shifts by less than 20 nm in magnitude with a change in an incidence angle between 0° to 30°.

2. The optical filter of claim 1 , wherein the plurality of thin film hydrogenated silicon layers each have a refractive index of greater than 3.6 at a wavelength of 830 nm.

3. The optical filter of claim 1 , wherein the plurality of thin film hydrogenated silicon layers each have a refractive index of greater than 3.5 over the wavelength range of 800 nm to 1100 nm.

4. The optical filter of claim 1 , wherein the plurality of thin film hydrogenated silicon layers each have a refractive index of greater than 3.6 over the wavelength range of 800 nm to 1100 nm.

5. The optical filter of claim 1 , wherein the plurality of thin film dielectric lower-refractive-index layers each have a refractive index of less than 2.5 over the wavelength range of 800 nm to 1100 nm.

6. The optical filter of claim 1 , wherein the plurality of thin film dielectric lower-refractive-index layers each have a refractive index of less than 2 over the wavelength range of 800 nm to 1100 nm.

7. The optical filter of claim 1 , wherein the passband has a center wavelength that shifts by less than 15 nm in magnitude with a change in the incidence angle between 0° to 30°.

8. The optical filter of claim 1 , wherein the passband has a center wavelength that shifts by about 12.2 nm in magnitude with a change in the incidence angle between 0° to 30°.

9. The optical filter of claim 1 , wherein the plurality of thin film dielectric lower-refractive-index layers are each composed of silicon dioxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), titanium dioxide (TiO 2 ), niobium pentoxide (Nb 2 O 5 ), tantalum pentoxide (Ta 2 O 5 ), or a mixture thereof.

10. The optical filter of claim 1 , wherein the optical filter has a transmittance level, within the passband, of greater than 90% over the wavelength range of 800 nm to 1100 nm.

11. The optical filter of claim 1 , wherein the optical filter has a blocking level, outside of the passband, of greater than OD2 over a wavelength range of 400 nm to 1100 nm.

12. The optical filter of claim 1 , wherein the optical filter is a long-wavelength-pass edge filter, and wherein the passband has an edge wavelength in the wavelength range of 800 nm to 1100 nm.

13. The optical filter of claim 1 , wherein the optical filter is a bandpass filter, and wherein the passband has a center wavelength in the wavelength range of 800 nm to 1100 nm.

14. The optical filter of claim 1 , wherein the passband has a full width at half maximum (FWHM) of less than 50 nm.

15. The optical filter of claim 1 , further comprising:
a substrate, wherein the filter stack is disposed on a first surface of the substrate and a coating is disposed on a second surface of the substrate opposite the first surface.

16. The optical filter of claim 15 , wherein the coating is an antireflective (AR) coating.

17. The optical filter of claim 1 , wherein the optical filter has a total coating thickness of less than 10 μm.

18. The optical filter of claim 1 , forming part of a sensor system including a light source for emitting light at an emission wavelength within the passband of the optical filter, and a sensor for detecting the emitted light,
wherein the optical filter receives the emitted light from the light source and transmits the emitted light to the sensor.

19. The optical filter of claim 1 , wherein the plurality of thin film hydrogenated silicon layers are each deposited by pulsed direct current (DC) sputtering.

20. The optical filter of claim 1 , wherein the plurality of thin film hydrogenated silicon layers are associated with an extinction coefficient of approximately 0.00055 at 800 nm.

21. The optical filter of claim 1 , wherein the plurality of thin film hydrogenated silicon layers are associated with an extinction coefficient of less than 0.0003 at 800 nm.

22. A sensor system, comprising:
an optical filter, exhibiting interference that creates a passband including an emission wavelength and at least partially overlapping with a wavelength range of 800 nm to 1100 nm, being disposed to receive emitted light and transmit the emitted light,
wherein the emitted light is emitted, from a light source, at the emission wavelength in the wavelength range of 800 nm to 1100 nm, and
wherein the optical filter includes a filter stack including:
a plurality of thin film hydrogenated silicon layers,
wherein the plurality of thin film hydrogenated silicon layers each have a refractive index of greater than 3 over the wavelength range of 800 nm to 1100 nm; and

a plurality of thin film dielectric lower-refractive-index layers,
wherein the plurality of thin film dielectric lower-refractive-index layers each have a refractive index of less than 3 over the wavelength range of 800 nm to 1100 nm, and
wherein thin film dielectric lower-refractive-index layers, of the plurality of thin film dielectric lower-refractive-index layers, alternate, in a one-to-one ration, with thin film hydrogenated silicon layers of the plurality of thin film hydrogenated silicon layers,

wherein the passband has a center wavelength that shifts by less than 20 nm in magnitude with a change in an incidence angle between 0° to 30°.

23. The sensor system of claim 22 , wherein the optical filter is disposed directly on a sensor.

24. The sensor system of claim 22 , further comprising:
a sensor, wherein the sensor system is a proximity sensor system, the emitted light is directed toward a target, the optical filter is disposed to receive the emitted light after reflection by the target, and the sensor is a proximity sensor for detecting the emitted light and sensing a proximity of the target.

25. The sensor system of claim 22 , further comprising:
a sensor, wherein the sensor system is a three-dimensional (3D) imaging system, the emitted light is directed toward a target, the optical filter is disposed to receive the emitted light after reflection by the target, and the sensor is a 3D image sensor for detecting the emitted light and providing a 3D image of the target.

26. The sensor system of claim 25 , wherein the 3D imaging system is a gesture-recognition system, the target is a user of the gesture-recognition system, and the sensor system further includes:
a processing system for processing a 3D image of the user to recognize a gesture of the user.

27. The sensor system of claim 22 , further comprising: a sensor, wherein the sensor is a charge-coupled device (CCD) chip or a com

Assignees

• Viavi Solutions Inc
• Viavi Solutions Inc

Inventors

• Hendrix Karen Denise
• Bradley Jr Richard A
• Grigonis Marius
• Ockenfuss Georg J

Classifications

• G02B1/115

  Multilayers · CPC title

• G02B5/207

  comprising semiconducting materials · CPC title

• C23C14/548

  Controlling the composition · CPC title

• H04N13/254

  in combination with electromagnetic radiation sources for illuminating objects · CPC title

• G02B5/281 Primary

  designed for the infrared light · CPC title