Electronic device with stacked metasurface lenses
US-12153233-B1 · Nov 26, 2024 · US
Light emitting devices with optical elements and bonding layers
US9583683B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9583683-B2 |
| Application number | US-201314136171-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 20, 2013 |
| Priority date | Sep 12, 2000 |
| Publication date | Feb 28, 2017 |
| Grant date | Feb 28, 2017 |
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- Title
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Abstract
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Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.
First claim
Opening claim text (preview).
What is being claimed is: 1. A light emitting device having a stack of layers including semiconductor layers comprising an active region, said device comprising: a transparent optical element bonded to a surface of the stack by a bonding layer, wherein the transparent optical element does not extend over sides of the stack of layers, and wherein the bonding layer is selected from the group consisting of glass having an optical index greater than 1.8, Schott glass SF59, Schott glass LaSF 3, and Schott glass LaSF N18. 2. The light emitting device of claim 1 wherein a smallest ratio of a length of a base of said optical element to a length of said surface is greater than one. 3. The light emitting device of claim 1 further comprising luminescent material included in the bonding layer. 4. The light emitting device of claim 3 wherein the luminescent material is one of quantum dots and nanocrystals. 5. The light emitting device of claim 1 further comprising luminescent material included in the optical element. 6. A light emitting device having a stack of layers including semiconductor layers comprising an active region, said device comprising: a transparent optical element bonded to a surface of the stack by a bonding layer, wherein the bonding layer is selected from the group consisting of metal oxide, tungsten oxide, titanium oxide, nickel oxide, zirconium oxide, indium tin oxide, and chromium oxide. 7. The light emitting device of claim 6 wherein a smallest ratio of a length of a base of said optical element to a length of said surface is greater than one. 8. The light emitting device of claim 6 further comprising luminescent material included in the bonding layer. 9. The light emitting device of claim 8 wherein the luminescent material is one of quantum dots and nanocrystals. 10. The light emitting device of claim 6 further comprising luminescent material included in the optical element. 11. A light emitting device having a stack of layers including semiconductor layers comprising an active region, said device comprising: a transparent optical element bonded to a surface of the stack by a bonding layer, wherein the bonding layer includes luminescent material, wherein a smallest ratio of a length of a base of said optical element to a length of said surface is greater than one, and wherein the transparent optical element does not extend over sides of the stack of layers. 12. The light emitting device of claim 11 wherein the luminescent material is one of quantum dots and nanocrystals. 13. The light emitting device of claim 11 further comprising luminescent material included in the optical element.
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
- H01L33/58Primary
Electricity · mapped topic
characterised by their shape, e.g. curved or truncated substrates · CPC title
Wavelength conversion materials · CPC title
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Frequently asked questions
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- What does patent US9583683B2 cover?
- Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.
- Who is the assignee on this patent?
- Lumileds Llc
- What technology area does this patent fall under?
- Primary CPC classification H01L33/58. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 28 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).