PIN diode with nanoclusters

Patent metadata

Field	Value
Publication number	US-9583665-B2
Application number	US-201414476957-A
Country	US
Kind code	B2
Filing date	Sep 4, 2014
Priority date	Sep 4, 2014
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

A diode for detecting the presence of radiation includes a P region, an N region, an intrinsic region located between the P region and the N region, and a layer of nanoclusters located adjacent to the intrinsic region.

First claim

What is claimed:

1. A diode for detecting the presence of radiation comprising:
a P region;
an N region;
an intrinsic region located between the P region and the N region;
a layer of nanoclusters located adjacent to the intrinsic region, wherein the nanoclusters are doped with a material that generates alpha particles upon interactions with neutrons.

2. The diode of claim 1 further comprising:
a dielectric layer located between the layer of nanoclusters and the intrinsic region.

3. The diode of claim 1 wherein the nanoclusters are characterized as silicon nanocrystals.

4. The diode of claim 1 wherein the material includes 10 B isotope.

5. The diode of claim 1 wherein the intrinsic region is characterized as monocrystalline silicon.

6. The diode of claim 1 wherein the nanoclusters have an average height in the range of 10-30 nm.

7. The diode of claim 1 wherein the nanoclusters have an average spacing in the range of 10-30 nm.

8. The diode of claim 1 wherein the P region is located in a substrate, the N region is located in the substrate, the intrinsic region is located in the substrate between the P region and the N region, and the layer of nanoclusters is located over the intrinsic region.

9. The diode of claim 1 further comprising a visible light blocking structure, the layer of nanoclusters is located between the intrinsic region and the visible light blocking structure.

10. The diode of claim 9 further comprising:
a first electrode in ohmic contact with the P region;
a second electrode in ohmic contact with the N region;
wherein the first electrode and the second electrode each include a conductive structure, the conductive structure of the first electrode, the conductive structure of the second electrode, and the blocking structure are predominately made of a first material.

11. The diode of claim 10 wherein the first material is at least 90% aluminum by weight percent.

12. The diode of claim 1 wherein the nanoclusters are of a material, dimension, and spacing that causes at least one of the group consisting of photons and charged particles to change direction upon leaving the layer of nanoclusters.

13. A device for detecting radiation, the device comprising:
a diode, the diode comprising:
a P region;
an N region;
an intrinsic region located between the P region and the N region;
a layer of nanoclusters located adjacent to the intrinsic region;

a measuring circuit having a first terminal electrically coupled to P region and a second terminal coupled to the N region, the measuring circuit configured to provide an indication of the presence of radiation induced electrons in the intrinsic region.

14. The device of claim 13 wherein the measuring circuit is configured to detect the presence of radiation induced electrons in the intrinsic region by measuring a current flowing through the intrinsic region.

15. The device of claim 13 wherein the nanoclusters are doped with a material that generates alpha particles upon interactions with neutrons.

16. The device of claim 15 further comprising:
a second diode comprising:
a second P region;
a second N region;
a second intrinsic region located between the second P region and the second N region;
a second layer of nanoclusters located adjacent to the second intrinsic region, wherein the second layer of nanoclusters is substantially free of the material that generates alpha particles upon interactions with neutrons.

17. A diode comprising:
a P region of a diode in a substrate;
an N region of the diode in the substrate, the N region separated from the P region by an intrinsic region of the diode in the substrate;
a layer of nanoclusters only over the substrate over the intrinsic region, wherein the layer of nanoclusters is in situ doped with a material that generates alpha particles upon interactions with neutrons.

18. The diode of claim 17 further comprising:
a first electrode in ohmic contact with the P region;
a second electrode in ohmic contact with the N region;
a visible light blocking structure over the intrinsic region and over the layer of nanoclusters, a portion of the light blocking structure is in a same lateral plane parallel to the substrate as a portion of the first electrode and a portion of the second electrode.

Assignees

• Kundalgurki Srivatsa G
• Nxp Usa Inc

Inventors

• Kundalgurki Srivatsa G

Classifications

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01L31/02327

  Electricity · mapped topic

• H01L31/105

  Electricity · mapped topic

• H01L31/115 Primary

  Electricity · mapped topic

• G01T3/08

  with semiconductor detectors · CPC title