Thin film solar cell backside contact manufacturing process

Patent metadata

Field	Value
Publication number	US-9583649-B2
Application number	US-201514746413-A
Country	US
Kind code	B2
Filing date	Jun 22, 2015
Priority date	Jun 22, 2015
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

Embodiments of the invention related to a method for manufacturing a thin film solar cell backside contact. Prior to application of materials, a planar substrate is provided and an associated backside of the substrate is modified to form one or more pedestals. The modified substrate is layered with multiple layers of material, including a conducting layer, a reflective layer, and a passivation layer. The layered backside substrate is polished to expose portions of the conducting layer at discrete locations on the backside of the substrate. The exposed portions of the conducting layer maintain direct electrical communication between an absorber layer deposited on the layered backside substrate and the conducting layer.

First claim

What is claimed is:

1. A method for manufacturing a thin film solar cell backside contact comprising a layered substrate, the method comprising:
modifying a backside substrate, including deforming a first side of the substrate, wherein a surface profile on the first side of the substrate includes one or more extensions;
creating a multi-layered substrate in communication with the modified backside, including depositing a conducting layer on the modified substrate, depositing a reflective layer on the conducting layer, and depositing a passivation layer on the reflective layer;
polishing the surface profile of the layered substrate, wherein the polishing exposes the conducting layer adjacent to the one or more extensions, and the polishing forming a backside surface;
depositing an absorber layer across the polished surface;
depositing a buffer layer across the absorber layer;
depositing a transparent oxide across the buffer layer;
applying an anti-reflective coating to the transparent oxide; and
forming a contact grid across the backside of the layered substrate, the contact grid in communication with the transparent oxide layer.

2. The method of claim 1 , wherein the conducting, reflective, and passivation layers are sequentially deposited across the backside of the substrate, the sequential deposit including preservation of the extensions formed through the substrate modification.

3. The method of claim 2 , wherein forming the contact grid further comprising polishing a discrete area of the anti-reflective coating, and applying a grid layer to the polished area, the grid layer in communication with the transparent oxide.

4. The method of claim 3 , further comprising the grid layer protruding vertically from the backside of the layered substrate.

5. The method of claim 1 , wherein the conducting layer is comprised of Molybdenum (Mo) material.

6. The method of claim 1 , wherein the absorber layer is comprised of Copper Indium Gallium Selenide (CIGS) material.

7. The method of claim 6 , wherein the layer of CIGS is between 0.5 and 5 micrometers in thickness.

8. The method of claim 1 , wherein polishing the surface profile, further comprising recessing the extensions to a planar level of the passivation layer and forming an electrical contact.

9. The method of claim 1 , wherein the backside surface has a characteristic selected from the group consisting of: planar and relatively planar.

10. A thin film solar cell, the cell comprising:
a layered, backside contact comprising an embossed substrate, a conducting layer, a reflective layer, and a passivation layer, the contact polished to expose portions of the conducting layer at the surface of the contact;
an absorber layer in communication with polished contact;
a buffer layer in communication with the absorber layer;
a transparent layer in communication with the buffer layer;
a contact grid in communication with the transparent layer; and
an anti-reflective coating in communication with the contact grid and the first transparent layer.

11. The cell of claim 10 , wherein the conducting layer is constructed from a Molybdenum (Mo) material.

12. The cell of claim 10 , wherein the reflective layer is constructed from a silver (Ag) material.

13. The cell of claim 10 , wherein the passivation layer is constructed from an Aluminum Oxide (Al 2 O 3 ) material.

14. The cell of claim 10 , wherein the absorber layer is constructed from a material selected from the group consisting of: Copper Indium Gallium Selenide (CIGS) and copper zinc tin sulfide (CZTS).

15. The cell of claim 14 , wherein the layer of CIGS is between 0.5 and 5 micrometers in thickness.

Assignees

• IBM

Inventors

• Eickelmann Hans-Juergen
• Kellmann Ruediger
• Kuehl Hartmut
• Schmidt Markus

Classifications

• H01L31/0445

  Electricity · mapped topic

• H01L31/022441 Primary

  Electricity · mapped topic

• H01L31/0326

  Electricity · mapped topic

• H01L31/0322

  Electricity · mapped topic

• H01L31/02327

  Electricity · mapped topic