Amorphous oxide and field effect transistor

Patent metadata

Field	Value
Publication number	US-9583637-B2
Application number	US-201514806108-A
Country	US
Kind code	B2
Filing date	Jul 22, 2015
Priority date	Nov 10, 2004
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

First claim

What is claimed is:

1. A field effect transistor having an active layer comprising an amorphous oxide film and a gate electrode formed so as to face the active layer through a gate insulator, the amorphous oxide film having an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C., wherein the amorphous oxide film comprises an amorphous oxide comprising In—Ga—Zn—O or In—Ga—Zn—Mg—O, characterized in that the oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P.

2. A field effect transistor having an active layer comprising an amorphous oxide film and a gate electrode formed so as to face the active layer through a gate insulator, the amorphous oxide film having an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C., wherein the amorphous oxide film comprises an amorphous oxide comprising In—Ga—Zn—O or In—Ga—Zn—Mg—O, characterized in that the oxide comprises at least one element selected from the group consisting of Ti, Ru, and F.

3. The field effect transistor according to claim 1 or 2 , wherein the electron carrier concentration is less than 10 17 /cm 3 at a temperature of 25° C.

4. The field effect transistor according to claim 1 or 2 , wherein the amorphous oxide is an oxide which exhibits a halo pattern and no characteristic diffraction line in an X-ray diffraction spectrometry.

5. The field effect transistor according to claim 3 , wherein the amorphous oxide is an oxide which exhibits a halo pattern and no characteristic diffraction line in an X-ray diffraction spectrometry.

6. The field effect transistor according to claim 1 or 2 , wherein the amorphous oxide film is obtained by using a target having a composition InGaO 3 (ZnO) m or InGaO 3 (Zn 1-x Mg x O) m in a crystalline state where m is a natural number of less than 6 and x is greater than 0 and not greater than 1.

7. The field effect transistor according to claim 3 , wherein the amorphous oxide film is obtained by using a target having a composition InGaO 3 (ZnO) m or InGaO 3 (Zn 1-x Mg x O) m in a crystalline state where m is a natural number of less than 6 and x is greater than 0 and not greater than 1.

8. The field effect transistor according to claim 4 , wherein the amorphous oxide film is obtained by using a target having a composition InGaO 3 (ZnO) m or InGaO 3 (Zn 1-x Mg x O) m in a crystalline state where m is a natural number of less than 6 and x is greater than 0 and not greater than 1.

9. The field effect transistor according to claim 5 , wherein the amorphous oxide film is obtained by using a target having a composition InGaO 3 (ZnO) m or InGaO 3 (Zn 1-x Mg x O) m in a crystalline state where m is a natural number of less than 6 and x is greater than 0 and not greater than 1.

Assignees

• Canon Kk
• Tokyo Inst Tech
• Japan Science & Tech Agency

Inventors

• Sano Masafumi
• Nakagawa Katsumi
• Hosono Hideo
• Kamiya Toshio
• Nomura Kenji

Classifications

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P14/3454

  Amorphous · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/2922 Primary

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title