Capacitor having a top compressive polycrystalline plate

Patent metadata

Field	Value
Publication number	US-9583559-B2
Application number	US-201514665521-A
Country	US
Kind code	B2
Filing date	Mar 23, 2015
Priority date	Feb 7, 2011
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

In one embodiment a method of forming a compressive polycrystalline semiconductive material layer is disclosed. The method comprises forming a polycrystalline semiconductive seed layer over a substrate and forming a silicon layer by depositing silicon directly on the polycrystalline silicon seed layer under amorphous process conditions at a temperature below 600 C.

First claim

What is claimed is:

1. A capacitor comprising:
a first plate;
a dielectric; and
a second plate separated from the first plate by the dielectric, wherein the second plate comprises a compressive polysilicon layer, wherein the second plate comprises a tensile polysilicon layer, wherein the tensile polysilicon layer is separated from the compressive polysilicon layer by an interface layer, and wherein the interface layer comprises an oxide or a nitride, wherein the dielectric and the first plate are embedded within the second plate.

2. The capacitor according to claim 1 , wherein the compressive polysilicon layer comprises a doped compressive polysilicon layer.

3. The capacitor according to claim 1 , wherein the tensile stress from the tensile polysilicon layer compensates the compressive stress from the compressive polysilicon layer.

4. The capacitor according to claim 1 , wherein the capacitor is part of a vertical CMOS device comprising a vertical nMOS device and a vertical pMOS device.

5. The capacitor according to claim 1 , wherein the capacitor is part of a planar transistor device.

6. The capacitor according to claim 1 , wherein the capacitor is part of a trench capacitor.

7. The capacitor according to claim 1 , wherein the capacitor is part of a stacked capacitor.

8. The capacitor according to claim 1 , wherein the first plate comprises a first arm extending upwards in a first vertical direction, a second arm extending upwards in the first vertical direction, and a horizontal section connecting the first arm and the second arm, and wherein a region between the first arm and the second arm is filled with a material of the second plate.

9. A capacitor comprising:
a first plate comprises a tensile polysilicon layer;
a dielectric; and
a second plate separated from the first plate by the dielectric, wherein the second plate comprises a compressive polysilicon layer and a tensile polysilicon layer separated from the compressive polysilicon layer by an oxide or nitride layer, wherein the tensile stress from the tensile polysilicon layer compensates the compressive stress from the compressive polysilicon layer, wherein the first plate comprises a first arm extending upwards in a first vertical direction, a second arm extending upwards in the first vertical direction, and a horizontal section connecting the first arm and the second arm, wherein a region between the first arm and the second arm is filled with a material of the second plate.

10. The capacitor of claim 9 , wherein the first plate further comprises a compressive polysilicon layer to compensate the tensile stress from the tensile polysilicon layer of the first plate.

11. A capacitor comprising:
a first plate;
a dielectric; and
a second plate separated from the first plate by the dielectric, wherein the second plate comprises a compressive polycrystalline semiconductive layer and a tensile polycrystalline semiconductive layer separated from the compressive polycrystalline semiconductive layer by an interface layer, and wherein the interface layer comprises an oxide or a nitride, wherein the dielectric and the first plate are embedded within the second plate.

12. The capacitor according to claim 11 , wherein the compressive polycrystalline semiconductive layer comprises a doped compressive polysilicon layer.

13. The capacitor according to claim 11 , wherein the tensile stress from the tensile polycrystalline semiconductive layer compensates the compressive stress from the compressive polycrystalline semiconductive layer.

14. The capacitor according to claim 11 , wherein the capacitor is part of a vertical CMOS device comprising a vertical nMOS device and a vertical pMOS device.

15. The capacitor according to claim 11 , wherein the capacitor is part of a planar transistor device.

16. The capacitor according to claim 11 , wherein the capacitor is part of a trench capacitor.

17. The capacitor according to claim 11 , wherein the capacitor is part of a stacked capacitor.

Assignees

• Infineon Technologies Ag

Inventors

• Lehnert Wolfgang
• Pompl Stefan
• Meyer Markus

Classifications

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3256

  Microstructure · CPC title

• H10P14/3211 Primary

  Silicon, silicon germanium or germanium · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10D64/01306

  the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon · CPC title