Nano deposition and ablation for the repair and fabrication of integrated circuits

Patent metadata

Field	Value
Publication number	US-9583401-B2
Application number	US-201414179099-A
Country	US
Kind code	B2
Filing date	Feb 12, 2014
Priority date	Feb 12, 2014
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

An apparatus for and methods of repairing and manufacturing integrated circuits using the apparatus. The apparatus, comprising: a vacuum chamber containing: a movable stage configured to hold a substrate; an inspection and analysis probe; a heat source; a gas injector; and a gas manifold connecting multiple gas sources to the gas injector.

First claim

What is claimed is:

1. A method, comprising:
(a) providing an apparatus including:
a vacuum chamber containing a movable stage configured to hold a substrate, an inspection and analysis probe, a heat source, a gas injector and a gas manifold, said gas manifold connecting multiple gas sources to said gas injector;

(b) loading a substrate onto said movable stage;
(c) scanning said substrate for defects using said inspection and analysis probe;
(d) if a defect is found determining if it is (i) a short or extension between wires, (ii) an open or notch in a wire, or (iii) a void in a dielectric layer between said wires;
determining a chemical composition of said defect;
selecting a gas from said multiple gas sources for repairing said defect;
if said defect is a short or extension between wires either laser abating or plasma etching said defect using said selected gas;
if said defect is an open or notch in a wire, depositing a conductive material to repair said defect using said selected gas; and
if said defect is a void in a dielectric layer between wires, depositing a dielectric material to repair said defect using said selected gas; and

(e) repeating steps (c) and (d) until no defects are found.

2. The method of claim 1 , wherein said inspection and analysis probe includes a scanning electron microscope probe connected to an image recognition system and (c) includes using said image recognition system to determine if a defect exists.

3. The method of claim 1 , wherein said inspection and analysis probe includes an energy dispersive X-ray spectrophotometer probe and said determining a chemical composition of said defect includes using said dispersive X-ray spectrophotometer probe to determine said chemical composition of said defect.

4. The method of claim 1 , wherein said substrate is a semiconductor substrate.

5. The method of claim 1 , wherein said multiple gas sources comprise:
at least one inert gas comprising one or more of nitrogen, argon and neon; and
at least one etchant gas comprising one or more of chloro and fluoro hydrocarbons, oxygen and hydrogen; and
at least one metal deposition gas comprising one or more of aluminum alkyls, triisobutylaluminum, tri methyl aluminum, aluminum alkyl hydrides, dimethylaluminum hydride, copper beta-diketonates, copper (II) dialykldithiocarbamate complexes, and tungsten hexafluoride.

6. The method of claim 5 , wherein said multiple gas sources further comprise:
at least one dielectric deposition gas comprising one or more of tetraethylorthosilicate, silane and nitrogen tetra fluoride.

7. A method, comprising:
(a) providing an apparatus including:
a controller and a vacuum chamber, said vacuum chamber containing a movable stage configured to hold a substrate, an inspection and analysis probe, a heat source; a gas injector and a gas manifold, said gas manifold connecting multiple gas sources to said gas injector;

(b) loading a substrate onto said movable stage;
(c) loading a wiring scheme into said controller;
(d) selecting a wiring instruction from said wiring scheme and determining if the instruction is to connect wires or cut wires and selecting a gas from said multiple gas sources;
(e) if said instruction is to cut a wire, either laser abating or plasma etching said wire using said selected gas or if said instruction is to connect wires, depositing a conductive material between said wires to connect said wires; and
(f) repeating steps (c) and (e) until no there are no further instructions.

8. The method of claim 7 , wherein said inspection and analysis probe includes a scanning electron microscope probe connected to an image recognition system.

9. The method of claim 7 , wherein said inspection and analysis probe includes an energy dispersive X-ray spectrophotometer probe and said determining a chemical composition of said defect includes using said dispersive X-ray spectrophotometer probe to determine said chemical composition of said defect.

10. The method of claim 7 , wherein said substrate is a semiconductor substrate and wherein said multiple gas sources comprise:
at least one inert gas comprising one or more of nitrogen, argon and neon; and
at least one etchant gas comprising one or more of chloro and fluoro hydrocarbons, oxygen and hydrogen; and
at least one metal deposition gas comprising one or more of aluminum alkyls, triisobutylaluminum, tri methyl aluminum, aluminum alkyl hydrides, dimethylaluminum hydride, copper beta-diketonates, copper (II) dialykldithiocarbamate complexes, and tungsten hexafluoride.

Assignees

• IBM

Inventors

• Adderly Shawn A
• Gambino Jeffrey P
• Joseph Eric A
• Speranza Anthony C

Classifications

• C23C16/513

  using plasma jets · CPC title

• H01J37/32568

  Relative arrangement or disposition of electrodes; moving means · CPC title

• C23C16/04

  Coating on selected surface areas, e.g. using masks · CPC title

• G01N2223/645

  quality control · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title