Nanostructured titania semiconductor material and its production process

Patent metadata

Field	Value
Publication number	US-9580332-B2
Application number	US-201313922952-A
Country	US
Kind code	B2
Filing date	Jun 20, 2013
Priority date	Jun 21, 2012
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

A nanostructured titania semiconductor material termed TSG-IMP having a predetermined crystal size is produced by a sol-gel method by adding a titanium alkoxide to an alcoholic solution, adding an acid to the alcoholic solution, subjecting the acidic solution to agitation under reflux conditions; stabilizing the medium and adding bidistilled water under reflux until gelation; subjecting the gel to aging until complete formation of the titania which is dried and calcined.

First claim

The invention claimed is:

1. A nanostructured titania semiconductor material TSG-IMP consisting of crystalline amorphous phases: anatase, brookite and rutile, in the following proportions:

Activation
Crystalline Amorphous phase (%)

Temperature
General

(° C.)
Anatase
Brookite
Rutile

200-300
60-70
30-40

350-550
75-80
12-17
5-12.

2. A nanostructured titania semiconductor material TSG-IMP, according to claim 1 , having the following crystal sizes for crystalline amorphous phase:

Activation
Crystalline Amorphous Phase (nm)

Temperature
General

(° C.)
Anatase
Brookite
Rutile

200-300
 6-20
 6-20

350-550
20-23
12-17
31-37.

3. A nanostructured titania semiconductor material TSG-IMP, according to claim 1 , having the following crystal dimension:

Activation
Crystal Dimension

Temperature
(nm)

(° C.)
General

200-300
 6-12

350-550
15-30.

4. A nanostructured titania semiconductor material TSG-IMP, according to claim 1 , having the following textural properties:

Activation
Surface Area
Average Pore

Temperature
(m 2 /g)
Diameter (Å)

(° C.)
General
General

200-300
180-250
30-50 

350-550
 60-100
70-110.

5. A nanostructured titania semiconductor material TSG-IMP, according to claim 1 , having the following band gap energy (Eg) values:

Band gap Energy (Eg)

Activation
(eV)

Temperature (° C.)
General

200-300
3.30-3.90

350-550
3.00-3.20.

6. A nanostructured titania semiconductor material TSG-IMP, according to claim 1 , having the following hydroxylation degrees:

Activation Temperature
Hydroxylation

(° C.)
Degree*

300
5.67706-12.88881

500
1.50975-3.92518 .

*Deconvolutions determined at 300° C.

7. The titania semiconductor material of claim 1 , wherein said titania semiconductor material is obtained by activating titania at a temperature of 200° C. to 300° C., and where said titania semiconductor material comprises 63% to 67% anatase having a crystal size of 7-19 nm, and 33% to 37% brookite having a crystal size of 7-19 nm, a surface area of 190-200 m 2 /g, and an average pore diameter of 35-45 angstroms.

8. The titania semiconductor material of claim 1 , wherein said titania semiconductor material is o

Assignees

• Mexicano Inst Petrol

Inventors

• Castillo Cervantes Salvador
• Mejia Centeno Isidro
• Camposeco Solis Roberto
• Moran Pineda Florencia Marina
• Navarrete Bolanos Juan
• Montoya De La Fuente J Ascension
• Vargas Escudero Alfredo

Classifications

• B01J2235/10

  Infrared [IR] · CPC title

• B01J2235/30

  Scanning electron microscopy; Transmission electron microscopy · CPC title

• B01J35/77

  Compounds characterised by their crystallite size · CPC title

• B01J2235/15

  X-ray diffraction · CPC title

• B01J35/80

  characterised by their amorphous structures · CPC title