Method of producing graphene and other carbon materials

Patent metadata

Field	Value
Publication number	US-9580323-B2
Application number	US-201414292576-A
Country	US
Kind code	B2
Filing date	May 30, 2014
Priority date	May 31, 2013
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

The invention provides methods for the combustion synthesis (CS) of graphene by a novel exothermic self-sustained reaction between a refractory ceramic compound and a carbon-containing polymer under an inert gas atmosphere. The synthesis of graphene was confirmed by both transmission electron microscopy and Raman spectroscopy. The graphene produced has very low (<1 wt. %) oxygen content. Fluorocarbon gases released due to decomposition of the carbon-containing polymer in the combustion wave can reduce the ceramic to a gas and mesoporous carbon particles and graphene layers. The method does not require an external energy source because it occurs in a self-sustained synergetic manner after ignition. The methods are flexible in terms of tuning the synthesis conditions for desired products, and the method can be scaled to provide kilogram quantities.

First claim

What is claimed is:

1. A method for forming free-standing graphene sheets comprising initiating a self-sustaining exothermic combustion synthesis reaction between a refractory ceramic compound and a halogen-containing carbon substrate, wherein combustion proceeds under a substantially oxygen-free inert atmosphere at about 0.25 MPa to about 20 MPa, wherein after ignition the reaction is exothermic and self-propagating, and the reaction results in the formation of reduced carbon materials, wherein the reduced carbon materials comprise free-standing graphene sheets substantially void of impurities.

2. The method of claim 1 wherein the refractory ceramic compound is a carbide, boride, nitride, or hydride.

3. The method of claim 2 wherein the refractory ceramic compound is SiC, Si 3 N 4 , AlN, B 4 C, Mo 2 C, TiC, TiN, TiB 2 , TiH 2 , Ti 3 SiC 2 , TaC, TaN, TaB 2 , WC, ZrC, ZrN, ZrB 2 , or ZrH 2 .

4. The method of claim 1 wherein the halogen-containing carbon substrate is selected from polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC), polyvinyl flouride (PVF) polyethylenechlorotrifluoroethylene, poly(vinylidene fluoride), polytetrafluoroethylene, polyvinyl chloride, polyvinyl fluoride, polyethylenechlorotrifluoro-ethylene, or poly(vinylidene fluoride), poly(vinylidene chloride), fluorinated ethylene propylene, poly(4-bromostyrene), poly(4-chlorostyrene), poly(2-chloro-1,3-butadiene), brominated polystyrene, chlorinated polystyrene, or poly(tetrafluoroethylene propylene).

5. The method of claim 1 wherein the refractory ceramic compound and the halogen-containing carbon substrate are in the form of micronized powders that are mixed together to form a reactive mixture.

6. The method of claim 1 wherein the reduced carbon materials further comprise graphene-amorphous carbon composites and microporous carbon particles.

7. The method of claim 1 wherein the reduced carbon materials formed by the method comprise graphene sheets, wherein the graphene sheets are about 1 μm to about 10 μm in width, and about 1 μm to about 10 μm in length, and about 1 to about 10 Angstroms thick.

8. The method of claim 1 wherein the ratio of the refractory ceramic compound and the halogen-containing carbon substrate is about 1:1 to about 1:3.

9. The method of claim 1 wherein the free-standing graphene sheets comprise less than 1 wt. % of impurities.

10. The method of claim 9 wherein the reduced carbon materials comprise less than 1 wt. % of oxygen.

11. A method comprising initiating a combustion synthesis reaction between silicon carbide (SiC) and polytetrafluoroethylene (PTFE) under a substantially oxygen-free inert atmosphere at about 0.25 MPa to about 20 MPa, wherein the silicon carbide (SiC) and the polytetrafluoroethylene (PTFE) are in the form of micronized powders that are mixed together to form an exothermic self-propagating reactive mixture, wherein the exothermic self-propagating reaction mixture further comprises a water-soluble salt that following ignition of an exothermic self-propagating reaction modulates the temperature of the exothermic self-propagating reaction, and the reaction results in the formation of reduced carbon materials, wherein the reduced carbon materials comprise graphene in combination with carbon mesoporous particles, or thin-walled carbon spheres, wherein the graphene comprises sheets that are about 1 μm to about 10 μm in width, about 1 μm to about 10 μm in length, and about 1 to about 10 Angstroms thick.

12. The method of claim 11 wherein the ratio of SiC to PTFE is about 1:1 to about 1:3.

13. The method of claim 11 wherein the graphene sheets comprise less than about 1 wt. % oxygen.

14. The method of claim 11 further comprising isolating graphene from other carbon structures produced in the combustion synthesis reaction.

15. The method of claim 11 further comprising preparing a thin film transistor, a storage device, a gas sensing device, or a coating from the reduced carbon materials.

16. The method of claim 11 further comprising isolating the graphene from the reduced carbon materials.

17. The method of claim 16 wherein isolating the graphene comprises sonicating the reduced carbon materials in a water solution containing about 3% to about 7% ethyl alcohol, and about 0.1% to about 0.3% isopropyl alcohol.

18. The method of claim 11 wherein the reduced carbon materials further comprise graphene-amorphous carbon composites and microporous carbon particles.

19. The method of claim 11 wherein the graphene sheets have at least 2 times to at least 25 times the surface area of the micronized powders.

20. The method of claim 11 wherein the ratio of SiC to PTFE is about 1:2.

Assignees

• Mukasyan Alexander
• Manukyan Khachatur
• Univ Notre Dame Du Lac

Inventors

• Mukasyan Alexander
• Manukyan Khachatur

Classifications

• C01B31/0446 Primary

  Chemistry & Metallurgy · mapped topic

• C01B31/02

  Chemistry & Metallurgy · mapped topic

• C01B32/05 Primary

  Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30 · CPC title

• C01B32/184

  Preparation · CPC title