Non-volatile resistive oxide memory cells and methods of forming non-volatile resistive oxide memory cells

Patent metadata

Field	Value
Publication number	US-9577186-B2
Application number	US-201213488190-A
Country	US
Kind code	B2
Filing date	Jun 4, 2012
Priority date	May 2, 2008
Publication date	Feb 21, 2017
Grant date	Feb 21, 2017

Abstract

A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. The first conductive electrode has an elevationally outermost surface and opposing laterally outermost edges at the elevationally outermost surface in one planar cross section. Multi-resistive state metal oxide-comprising material is formed over the first conductive electrode. Conductive material is deposited over the multi-resistive state metal oxide-comprising material. A second conductive electrode of the memory cell which comprises the conductive material is received over the multi-resistive state metal oxide-comprising material. The forming thereof includes etching through the conductive material to form opposing laterally outermost conductive edges of said conductive material in the one planar cross section at the conclusion of said etching which are received laterally outward of the opposing laterally outermost edges of the first conductive electrode in the one planar cross section.

First claim

The invention claimed is:

1. A method of forming a non-volatile resistive oxide memory cell, comprising:
forming a first conductive electrode of the memory cell as part of a substrate, the first conductive electrode being within insulative material which comprises an elevationally outer surface, an opening being in the insulative material through the elevationally outer surface in one planar cross section over the first conductive electrode, the opening extending upwardly to the elevationally outermost surface of the insulative material in the one planar cross section;
forming programmable multi-resistive state metal oxide-comprising material within the opening over the first conductive electrode, the opening having a total volume that is completely filled by and with the programmable multi-resistive state metal oxide-comprising material; and
forming a second conductive electrode of the memory cell over the programmable multi-resistive state metal oxide-comprising material.

2. The method of claim 1 wherein the elevationally outer surface is planar.

3. The method of claim 1 wherein forming the first conductive electrode comprises:
providing conductive first electrode material within the insulative material; and
etching the conductive first electrode material selectively relative to the insulative material to elevationally recess the conductive first electrode material relative to the insulative material thereby forming the opening which is subsequently completely filled with said programmable multi-resistive state metal oxide-comprising material.

4. The method of claim 1 comprising forming the programmable multi-resistive state metal oxide-comprising material over the elevationally outer surface of the insulative material.

5. The method of claim 1 comprising forming the second conductive electrode to comprise a conductive line, the conductive line having opposing laterally outermost edges which are over the insulative material, the programmable multi-resistive state metal oxide-comprising material extending laterally beyond each of the opposing laterally-outermost edges of the conductive line.

6. The method of claim 1 wherein the forming of the first conductive electrode comprises selective etching of conductive material of the first conductive electrode.

7. The method of claim 6 wherein the selective etching is relative to the insulative material.

8. A method of forming a non-volatile resistive oxide memory cell, comprising:
forming a conductive first electrode material as part of a substrate, the conductive first electrode material being within insulative material;
etching the conductive first electrode material selectively relative to the insulative material to elevationally recess the conductive first electrode material relative to the insulative material and thereby form an opening in the insulative material in one planar cross section over the conductive first electrode material, the conductive first electrode material comprising a first conductive electrode of the memory cell, the opening extending upwardly to the elevationally outermost surface of the insulative material in the one planar cross section;
forming programmable multi-resistive state metal oxide-comprising material within the opening over the first conductive electrode, the opening having a total volume that is completely filled by and with the programmable multi-resistive state metal oxide-comprising material; and
forming a second conductive electrode of the memory cell over the programmable multi-resistive state metal oxide-comprising material.

9. The method of claim 8 comprising forming the programmable multi-resistive state metal oxide-comprising material over the elevationally outer surface of the insulative material.

10. The method of claim 8 comprising forming the second conductive electrode to comprise a conductive line, the conductive line having opposing laterally outermost edges which are over the insulative material, the programmable multi-resistive state metal oxide-comprising material extending laterally beyond each of the opposing laterally-outermost edges of the conductive line.

11. The method of claim 8 wherein the programmable multi-resistive state metal oxide-comprising material is formed to completely fill the opening over the first conductive electrode by and with the programmable multi-resistive state metal oxide-comprising material.

12. The method of claim 8 wherein the insulative material has an elevationally outer surface that is planar.

13. A method of forming a non-volatile resistive oxide memory cell, comprising:
forming a first conductive electrode of the memory cell as part of a substrate, the first conductive electrode being within insulative material which comprises an elevationally outer surface, an opening being in the insulative material through the elevationally outer surface in one planar cross section over the first conductive electrode;
forming programmable multi-resistive state metal oxide-comprising material within the opening over the first conductive electrode, the opening being completely filled by and with the programmable multi-resistive state metal oxide-comprising material; and
forming a second conductive electrode of the memory cell over the programmable multi-resistive state metal oxide-comprising material, and comprising forming the second conductive electrode to comprise a conductive line, the conductive line having opposing laterally outermost edges which are over the insulative material, the programmable multi-resistive state metal oxide-comprising material extending laterally beyond each of the opposing laterally-outermost edges of the conductive line.

14. A method of forming a non-volatile resistive oxide memory cell, comprising:
forming a conductive first electrode material as part of a substrate, the conductive first electrode material being within insulative material;
etching the conductive first electrode material selectively relative to the insulative material to elevationally recess the conductive first electrode material relative to the insulative material and thereby form an opening in the insulative material in one planar cross section over the conductive first electrode material, the conductive first electrode material comprising a first conductive electrode of the memory cell;
forming programmable multi-resistive state metal oxide-comprising material within the opening over the first conductive electrode, the opening being completely filled by and with the programmable multi-resistive state metal oxide-comprising material; and
forming a second conductive electrode of the memory cell over the programmable multi-resistive state metal oxide-comprising material, and comprising forming the second conductive electrode to comprise a conductive line, the conductive line having opposing laterally outermost edges which are over the insulative material, the programmable multi-resistive state metal oxide-comprising material extending laterally beyond each of the opposing laterally-outermost edges of the conductive line.

Assignees

• Srinivasan Bhaskar
• Sandhu Gurtej
• Smythe John
• Micron Technology Inc

Inventors

• Srinivasan Bhaskar
• Sandhu Gurtej
• Smythe John

Classifications

• H01L27/2463

  Electricity · mapped topic

• H01L45/1233

  Electricity · mapped topic

• H01L45/04 Primary

  Electricity · mapped topic

• H01L27/2472

  Electricity · mapped topic

• H01L45/1675

  Electricity · mapped topic