Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories

Patent metadata

Field	Value
Publication number	US-9577181-B2
Application number	US-201514880650-A
Country	US
Kind code	B2
Filing date	Oct 12, 2015
Priority date	Jul 3, 2014
Publication date	Feb 21, 2017
Grant date	Feb 21, 2017

Abstract

A magnetic junction usable in a magnetic device is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer and a perpendicular magnetic anisotropy (PMA) inducing layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is between the nonmagnetic spacer layer and the PMA inducing layer. The asymmetric free layer includes a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content. The second boron content is less than the first boron content. The first boron content and the second boron content are each greater than zero atomic percent. The first and second ferromagnetic layers each contain at least one of Co and CoFe. The magnetic junction is configured such that the asymmetric free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

First claim

We claim:

1. A magnetic junction for use in a magnetic device comprising:
a pinned layer;
a nonmagnetic spacer layer;
an asymmetric free layer, the nonmagnetic spacer layer residing between the pinned layer and the asymmetric free layer, the asymmetric free layer including a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content, the second boron content being less than the first boron content, the first boron content and the second boron content being greater than zero atomic percent, the first ferromagnetic layer and the second ferromagnetic layer each containing at least one of Co and CoFe; and
a perpendicular magnetic anisotropy (PMA) inducing layer;
wherein the magnetic junction is configured such that the asymmetric free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

2. The magnetic junction of claim 1 wherein the free layer further includes a nonmagnetic insertion layer between the first ferromagnetic layer and the second ferromagnetic layer.

3. The magnetic junction of claim 2 wherein the nonmagnetic insertion layer includes at least one of Bi, Ta, W, V, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr.

4. A magnetic device including a magnetic memory and comprising:
a plurality of magnetic storage cells for the magnetic memory, each of the plurality of magnetic storage cells including at least one magnetic junction, each of the at least one magnetic junction including a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer, and a perpendicular magnetic anisotropy (PMA) inducing layer, the nonmagnetic spacer layer being between the free layer and the pinned layer, the asymmetric free layer including a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content, the second boron content being less than the first boron content, the first boron content and the second boron content being greater than zero atomic percent, the first ferromagnetic layer and the second ferromagnetic layer each containing at least one of Co and CoFe, the magnetic junction being configured such that the asymmetric free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and
a plurality of bit lines coupled with the plurality of magnetic storage cells.

5. The magnetic memory of claim 4 wherein the free layer further includes a nonmagnetic insertion layer between the first ferromagnetic layer and the second ferromagnetic layer.

6. The magnetic memory of claim 5 wherein the nonmagnetic insertion layer includes at least one of Bi, Ta, W, V, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr.

7. A method for providing a magnetic junction for use in a magnetic device comprising:
providing a pinned layer;
providing a nonmagnetic spacer layer;
providing an asymmetric free layer, the nonmagnetic spacer layer residing between the pinned layer and the asymmetric free layer, the asymmetric free layer including a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content, the second boron content being less than the first boron content, the first boron content and the second boron content being greater than zero atomic percent, the first ferromagnetic layer and the second ferromagnetic layer each containing at least one of Co and CoFe; and
providing a perpendicular magnetic anisotropy (PMA) inducing layer;
wherein the magnetic junction is configured such that the asymmetric free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Tang Xueti
• Lee Jangeun

Classifications

• H01L43/12

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H01L27/228

  Electricity · mapped topic

• H01L27/222

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic