Semiconductor light emitting device and optical film

Patent metadata

Field	Value
Publication number	US-9577164-B2
Application number	US-201414914552-A
Country	US
Kind code	B2
Filing date	Sep 1, 2014
Priority date	Aug 30, 2013
Publication date	Feb 21, 2017
Grant date	Feb 21, 2017

Abstract

A semiconductor light emitting device, which can endure a dicing step for singulation, is superior in resistance to a high/low thermal cycle, and exhibits a high light extraction efficiency, and an optical film, which can be used favorably for producing the semiconductor light emitting device, are to be provided. The invention provides a semiconductor light emitting device comprising a semiconductor layer, an A layer, and a B layer, in which the semiconductor light emitting device is configured such that at least a part of emitted light from the semiconductor layer is emitted outward from the B layer through the A layer, the thickness of the A layer is from 1 nm to 200 nm, the B layer has a first major surface and a second major surface, while the first major surface faces the A layer and the second major surface has a concave-convex microstructure, the B layer contains an inorganic substance at 60 mass-% or more on the basis of the total mass of the B layer, and the content of an inorganic substance present in the A layer is lower than the content of the inorganic substance present in the B layer.

First claim

What is claimed is:

1. A semiconductor light emitting device comprising a semiconductor layer, an A layer, and a B layer, wherein:
the semiconductor light emitting device is configured such that at least a part of emitted light from the semiconductor layer is emitted outward from the B layer through the A layer,
the thickness of the A layer is from 1 nm to 200 nm,
the B layer has a first major surface and a second major surface, while the first major surface faces the A layer and the second major surface has a concave-convex microstructure,
the B layer contains an inorganic substance at 60 mass-% or more on the basis of the total mass of the B layer, and
the content of an inorganic substance present in the A layer is lower than the content of the inorganic substance present in the B layer.

2. The semiconductor light emitting device according to claim 1 , wherein:
the refractive index of the B layer is 1.60 or more, and
the refractive index of the A layer is smaller than the refractive index of the B layer.

3. The semiconductor light emitting device according to claim 1 , wherein the elastic modulus of the A layer is smaller than the elastic modulus of the B layer, provided that an elastic modulus is measured based on a sectional elastic modulus profile of the semiconductor light emitting device using an atomic force microscope.

4. The semiconductor light emitting device according to claim 1 , wherein the A layer contains an inorganic substance at 60 mass-% or less on the basis of the total mass of the A layer.

5. The semiconductor light emitting device according to claim 4 , wherein the A layer contains an inorganic substance at 40 mass-% or less on the basis of the total mass of the A layer.

6. The semiconductor light emitting device according to claim 1 , wherein the thickness of the A layer is from 1 nm to 100 nm.

7. The semiconductor light emitting device according to claim 1 , wherein the height of the concave-convex microstructure of the B layer is from 300 nm to 1,500 nm.

8. The semiconductor light emitting device according to claim 1 , wherein the porosity of the B layer attributable to voids with a major diameter of 50 nm or less present in the B layer is 5% or less.

9. The semiconductor light emitting device according to claim 1 , further comprising a C layer either or both of: on the second major surface of the B layer; and between the A layer and the B layer.

10. The semiconductor light emitting device according to claim 9 , wherein the C layer contains at least one selected from the group consisting of silicon oxide, aluminum oxide, zirconium oxide, silicon nitride, aluminum nitride, ITO (In 2 O 3 —SnO 2 ), and AZO (ZnO—Al 2 O 3 ).

11. The semiconductor light emitting device according to claim 9 , wherein the thickness of the C layer is from 1 nm to 150 nm.

12. The semiconductor light emitting device according to claim 1 , further comprising a sealing material.

13. An optical film for being stuck on at least a part of a light emitting surface of a semiconductor light emitting device, wherein:
the optical film comprises an A layer and a B layer,
the thickness of the A layer is from 1 nm to 200 nm,
the B layer has a first major surface and a second major surface, while the first major surface faces the A layer, and the second major surface has a concave-convex microstructure,
the A layer contains an inorganic substance at 60 mass-% or less on the basis of the total mass of the A layer,
the B layer contains an inorganic substance at 60 mass-% or more on the basis of the total mass of the B layer, and
the content of the inorganic substance present in the A layer is less than the content of the inorganic substance present in the B layer.

14. The optical film according to claim 13 , wherein:
the refractive index of the B layer is 1.60 or more, and
the refractive index of the A layer is less than the refractive index of the B layer.

15. The optical film according to claim 13 , wherein:
the glass transition temperature of the A layer is 10° C. or more,
the storage elastic modulus of the A layer at a temperature higher than the glass transition temperature by 20° C. is 10 MPa or less,
the ratio of the storage elastic modulus of the A layer at a temperature lower than the glass transition temperature by 20° C. to the storage elastic modulus of the A layer at a temperature higher than the glass transition temperature by 20° C. is from 3 to 600.

16. The optical film according to claim 15 , wherein the storage elastic modulus of the A layer at a temperature lower than the glass transition temperature by 20° C. is 10 MPa or more.

17. The optical film according to claim 13 , wherein the elastic modulus of the A layer is smaller than the elastic modulus of the B layer, provided that an elastic modulus is measured based on a sectional elastic modulus profile of the optical film using an atomic force microscope.

18. The optical film according to claim 13 , wherein the A layer contains an inorganic substance at 40 mass-% or less on the basis of the total mass of the A layer.

19. The optical film according to claim 13 , wherein the thickness of the A layer is from 1 nm to 100 nm.

20. The optical film according to claim 13 , wherein the height of the concave-convex microstructure of the B layer is from 300 nm to 1,500 nm.

21. The optical film according to claim 13 , wherein the porosity of the B layer attributable to voids with a major diameter of 50 nm or less present in the B layer is 5% or less.

22. The optical film according to claim 13 , wherein the A layer contains metal oxide particles, and the average primary particle diameter of the metal oxide particles is 100 nm or less.

23. The optical film according to claim 13 , wherein the surface roughness Rz of a surface, which faces the A layer, of a layer adjacent to the A layer is two-thirds or less of the thickness of the A layer.

24. The optical film according to claim 13 , further comprising a protective layer.

25. The optical film according to claim 24 , wherein the protective layer comprises a base layer, and a resin mold layer having a concave-convex microstructure.

26. The optical film according to claim 25 , wherein the concave-convex microstructure of the resin mold layer and the concave-convex microstructure of the B layer face each other having profiles that are complement each other.

27. A method for producing the optical film according to claim 13 comprising:
forming the B layer by transferring, or casting and curing, using a resin mold layer having a concave-convex microstructure, and
coating the A layer on to the first major surface of the B layer.

28. A method for producing the semiconductor light emitting device according to claim 1 comprising:
forming a laminate comprising the semiconductor layer, and
forming on a surface of the laminate an A layer and the B layer with interpositioning of the A layer.

29. A method for producing a semiconductor light emitting device comprising a semiconductor layer, an A layer, and a B layer, wherein:
the semiconductor light emitting device is configured such that at least a part of emitted light from the semiconductor layer is emitted out of the B layer through the A layer,
the thickness of the A layer is from 1 nm to 200 nm,
the B layer has a first major surface and a second major surface, while the first

Assignees

• Asahi Kasei E Materials Corp

Inventors

• Tsujimoto Hiroyuki
• Suzuki Atsushi
• Kato Junji
• Takada Shozo

Classifications

• H01L33/005

  Electricity · mapped topic

• H01L33/58 Primary

  Electricity · mapped topic

• H01L2933/0025

  Electricity · mapped topic

• H01L33/44

  Electricity · mapped topic

• H01L33/22

  Electricity · mapped topic