Method of fabricating thin film transistor

Patent metadata

Field	Value
Publication number	US-9577111-B2
Application number	US-201514938818-A
Country	US
Kind code	B2
Filing date	Nov 11, 2015
Priority date	Jul 24, 2015
Publication date	Feb 21, 2017
Grant date	Feb 21, 2017

Abstract

A method of fabricating a thin film transistor including following steps is provided. Sequentially form a semiconductor layer, a metal layer and an auxiliary layer on a substrate. Perform a crystallization process to transform the semiconductor layer into an active layer after the metal layer and the auxiliary layer are disposed on the semiconductor layer. After the active layer is formed, pattern the metal layer to form a source and a drain. Form a gate insulator and a gate. The gate insulator is disposed between the gate and the source and drain.

First claim

What is claimed is:

1. A method of fabricating a thin film transistor, comprising:
forming a semiconductor layer, a metal layer and an auxiliary layer on a substrate;
performing a crystallization process to transform the semiconductor layer into an active layer after the metal layer and the auxiliary layer are disposed on the semiconductor layer;
patterning the metal layer to form a source and a drain after the crystallization process;
forming a gate; and
forming a gate insulator layer, wherein the gate insulator layer is disposed between the gate and the source and drain.

2. The method according to claim 1 , further comprising performing a dehydrogenation process on the auxiliary layer or the metal layer after the auxiliary layer is formed.

3. The method according to claim 1 , wherein the auxiliary layer comprises amorphous silicon, polysilicon or monocrystalline silicon.

4. The method according to claim 1 , wherein the crystallization process is performed by using excimer laser, infrared femtosecond laser or green laser.

5. The method according to claim 4 , wherein energy of the excimer laser used in the excimer laser crystallization process is greater than 70 mJ/cm 2 .

6. The method according to claim 1 , wherein the metal layer comprises molybdenum (Mo), aluminum (Al), molybdenum wolfram (MoW) or copper wolfram (CuW).

7. The method according to claim 1 , wherein the crystallization process is performed under a temperature ranging from about 0° C. to about 25° C.

8. The method according to claim 1 , wherein the semiconductor layer comprises an indium-containing metal oxide semiconductor material, a zinc-containing metal oxide semiconductor material, or a gallium-containing metal oxide semiconductor material.

9. The method according to claim 1 , further comprising removing the auxiliary layer.

10. The method according to claim 1 , wherein the steps of forming the gate and forming the gate insulator layer are performed before the step of forming the semiconductor layer, the metal layer and the auxiliary layer.

11. The method according to claim 1 , wherein the steps of forming the gate and forming the gate insulator layer are performed after the step of forming the semiconductor layer, the metal layer and the auxiliary layer, and the step of forming the gate is performed after the step of forming the gate insulator layer.

Assignees

• Au Optronics Corp

Inventors

• Ye jia-hong

Classifications

• H10P14/3816

  Pulsed laser beam · CPC title

• H10P14/3808

  using laser beams · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title

• H01L21/02565

  Electricity · mapped topic