Transparent conducting film and preparation method thereof

Patent metadata

Field	Value
Publication number	US-9577109-B2
Application number	US-201314419847-A
Country	US
Kind code	B2
Filing date	Sep 17, 2013
Priority date	Sep 18, 2012
Publication date	Feb 21, 2017
Grant date	Feb 21, 2017

Abstract

There are provided a transparent conductive film and a method for preparing the same. The transparent conductive film of the present application comprises a compound having a crystalline structure and represented by Chemical Formula 1 and thus can be applied as a technology substituting for conventional ITO conductive films.

First claim

The invention claimed is:

1. A transparent conductive film comprising:
a compound having a crystalline structure and of Chemical Formula 1:
[(R p X q )O 3 ] m (AO) n   [Chemical Formula 1]

wherein:
R is Sc, Fe, Cu, Ga, Y, In, Er, Tm, Yb, or Lu,
X is Al,
A is Mg, Mn, Co, or Zn,
m is 1 to 4,
n is 1 to 7, and
p and q represent an atom content ratio of greater than 0 to 1 or less independently of each other.

2. The transparent conductive film of claim 1 , wherein the R of Chemical Formula 1 is In or Lu.

3. The transparent conductive film of claim 1 , wherein the compound represented by Chemical Formula 1 is InAlO 3 (ZnO) n , and the n is 1 to 7.

4. The transparent conductive film of claim 1 , wherein the compound represented by Chemical Formula 1 is additionally doped with an n-type dopant.

5. The transparent conductive film of claim 4 , wherein the n-type dopant comprises at least one selected from the group consisting of Sn, Ge, and Mo.

6. The transparent conductive film of claim 1 , wherein the compound represented by Chemical Formula 1 is additionally doped with a p-type dopant.

7. The transparent conductive film of claim 6 , wherein the p-type dopant is a nitrogen atom.

8. An electronic element comprising the transparent conductive film of claim 1 .

9. A thin film transistor comprising the transparent conductive film of claim 1 .

10. The thin film transistor of claim 9 , wherein the thin film transistor comprises a gate electrode, a gate insulating layer, an active layer, a source electrode, and a drain electrode on a substrate, and
the gate electrode, the gate insulating layer, the active layer, the source electrode, and the drain electrode comprises the compound represented by Chemical Formula 1 or a compound obtained by additionally doping the compound represented by Chemical Formula 1 with the n-type dopant or the p-type dopant.

11. The thin film transistor of claim 10 , wherein the gate electrode comprises InAlSnO 3 (ZnO) 4 .

12. The thin film transistor of claim 10 , wherein the source electrode and the drain electrode comprise InAlSnO 3 (ZnO) 4 .

13. A method for preparing a transparent conductive film comprising forming, on a substrate, a compound having a crystalline structure and of Chemical Formula 1:
[(R p X)O 3 ] m (AO) n   [Chemical Formula 1]

wherein:
R is Sc, Fe, Cu, Ga, Y, In, Er, Tm, Yb, or Lu,
X is Al,
A is Mg, Mn, Co, or Zn,
m is 1 to 4,
n is 1 to 7, and
p and q represent an atom content ratio of greater than 0 to 1 or less independently of each other.

14. The method for preparing a transparent conductive film of claim 13 , wherein the forming a compound represented by Chemical Formula 1 uses a DC/RF magnetron sputtering method or a molecular beam epitaxy method.

15. The method for preparing a transparent conductive film of claim 13 , wherein the compound represented by Chemical Formula 1 is InAlO 3 (ZnO) n , and the n is 1 to 7.

16. The method for preparing a transparent conductive film of claim 13 , wherein the compound represented by Chemical Formula 1 is additionally doped with an n-type dopant.

17. The method for preparing a transparent conductive film of claim 13 , wherein the compound represented by Chemical Formula 1 is additionally doped with a p-type dopant.

Assignees

• Lg Chemical Ltd

Inventors

• Shin Dongmyung
• Kim Dong-Ryul
• Chung Chanyeup

Classifications

• C01P2002/76

  by a space-group or by other symmetry indications · CPC title

• C01P2006/40

  Electric properties · CPC title

• C01P2002/77

  by unit-cell parameters, atom positions or structure diagrams · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• H01B1/08 Primary

  oxides · CPC title