Polishing slurry for cobalt removal

Patent metadata

Field	Value
Publication number	US-9576818-B2
Application number	US-201414192630-A
Country	US
Kind code	B2
Filing date	Feb 27, 2014
Priority date	Feb 28, 2013
Publication date	Feb 21, 2017
Grant date	Feb 21, 2017

Abstract

Provided herein are polishing compositions for removal of Co, for example, selectively over Cu, and methods of their use. A polishing composition comprising an abrasive and one or more Co complexors, where the polishing composition has a pH of 9 or more, and the Co complexor comprises one or more of functional groups selected from phosphonic acid (—P(═O)(OH) 2 ) group or carboxyl (—C(═O)OH) group.

First claim

The invention claimed is:

1. A polishing composition for polishing Co or a Co containing substrate, the composition comprising an abrasive; at least one Co complexor; ammonia; and bicarbonate; wherein
the polishing composition has a pH of 9 or more, and
the Co complexor comprises at least one selected from a group of 2-Aminoethylphosphonic acid (AEPn), Dimethyl methylphosphonate (DMMP), Tetramethylenediamine tetra(methylene phosphonic acid) (TDTMP), N-(phosphonomethyl)iminodiacetic acid (PMIDA), 2-carboxyethyl phosphonic acid (CEPA), 2-Hydroxyphosphonocarboxylic acid (HPAA), N,N-bis(phosphonomethyl)glycine (glyphosine) (PMG), Iminodimethylenephosphonic acid (IDMP), 2-hydroxyphosphonoacetic acid (HPAA), and amino tri(methylenephosphonic acid) (ATMP) or a salt of each thereof.

2. The polishing composition of claim 1 , wherein the complexor is present in an amount by weight of the polishing composition of less than or equal to 5%.

3. The polishing composition of claim 1 , wherein the abrasive is silica, alumina, or ceria.

4. The polishing composition of claim 1 , further comprising at least one of an oxidizing agent, a surfactant, and a corrosion inhibitor.

5. The polishing composition of claim 4 , wherein the oxidizing agent is present in an amount by weight of the polishing composition of 0.1-4%.

6. The polishing composition of claim 4 , wherein the oxidizing agent is H 2 O 2 .

7. The polishing composition of claim 4 , wherein the corrosion inhibitor is present in an amount by weight of the polishing composition of 0.1-0.4%.

8. The polishing composition of claim 4 , wherein the corrosion inhibitor is benzotriazole (BTA).

9. The polishing composition of claim 4 , wherein the surfactant is present in an amount by weight of the polishing composition of 0.01-2%.

10. The polishing composition of claim 4 , wherein the surfactant comprises a compound of formula (II):
R 1 —O—[CH 2 CH(CH 3 )O] m —[CH 2 CH 2 O] n —H  (II)

wherein R 1 is a C 1 -C 10 alkyl, m and n are chosen such that in the compound of formula II, oxyethylene and oxypropylene groups are present in a 1:1 amount by weight to a 3:1 amount by weight.

11. A method of polishing, the method comprising polishing Co and optionally Cu with a composition comprising an abrasive and one or more Co complexors, wherein
the polishing composition has pH of 9 or more, and
the Co complexor comprises one or more of functional groups selected from phosphonic acid (—P(═O)(OH) 2 ) group or carboxylic (—C(═O)OH) group.

12. The method of claim 11 , wherein a removal rate of Co is 200 angstrom/min to 2000 angstrom/min.

13. The method of claim 12 , wherein a removal rate of Cu is less than 100 angstrom/min, or less than 80 angstrom/min.

14. The method of claim 13 , wherein a Co:Cu removal selectivity is 5 or more.

15. The method of claim 11 , wherein
the complexor comprises at least one phosphonic acid derivative,
the phosphonic acid derivative comprises at least one phosphonic acid (—P(═O)(OH) 2 ) group or a salt thereof each covalently attached independently by a bond or a linker to a core,
the core is selected from a heteroatom or a C 1 -C 20 hydrocarbyl moiety, wherein the hydrocarbyl moiety is optionally substituted with 1-5 heteroatoms, optionally substituted with 1-5 hydroxyl groups, or optionally substituted with 1-5 heteroatoms and 1-5 hydroxyl groups,
the linker is a divalent or trivalent heteroatom or a divalent or trivalent C 1 -C 20 hydrocarbyl moiety, wherein the hydrocarbyl moiety is optionally substituted with 1-5 heteroatoms, optionally substituted with 1-5 hydroxyl groups, or optionally substituted with 1-5 heteroatoms and 1-5 hydroxyl groups, and
the heteroatom is independently selected from N, O, S, P and oxidized forms of N, S, and P.

16. The method of claim 15 , wherein the phosphonic acid derivative further comprises at least one carboxyl group or a salt thereof.

17. The method of claim 16 , wherein the phosphonic acid derivative is a compound of formula (I)

or a salt thereof, wherein

is the core,
each L independently is a bond or a linker, wherein the core and the linker are defined as in claim 15 , each u independently is 0-3, each v independently is 0-3, and y is 1-5; provided that the derivative contains at least one phosphonic acid group or a salt thereof.

18. The method of claim 15 , wherein the core is a heteroatom.

19. The method of claim 15 , wherein the core is a hydrocarbyl moiety selected from alkylenes optionally substituted with 1-3 hydroxyl groups.

20. The method of claim 11 , wherein the complexor comprises at least one selected from a group of 2-Aminoethylphosphonic acid (AEPn), Dimethyl methylphosphonate (DMMP), 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid (HEDP), Amino tris(methylene phosphonic acid) (ATMP), Ethylenediamine tetra(methylene phosphonic acid) (EDTMP), Tetramethylenediamine tetra(methylene phosphonic acid) (TDTMP), Hexamethylenediamine tetra(methylene phosphonic acid) (HDTMP), Diethylenetriamine penta(methylene phosphonic acid) (DTPMP), Phosphonobutane-tricarboxylic acid (PBTC), N-(phosphonomethyl)iminodiacetic acid (PMIDA), 2-carboxyethyl phosphonic acid (CEPA), 2-Hydroxyphosphonocarboxylic acid (HPAA), Amino-tris-(methylene-phosphonic acid) (AMP), N,N-bis(phosphonomethyl)glycine (glyphosine) (PMG), Iminodimethylenephosphonic acid (IDMP), and Ethylene Diamine Tetra (Methylene Phosphonic Acid) (EDTPO), and salts thereof.

21. The method of claim 11 , wherein the complexor comprises at least one of citric acid, citric acid salt, ethylenediamine tetraacetic acid (EDTA), 2-hydroxyphosphonoacetic acid (HPAA), and amino tri(methylene phosphonic acid) (ATMP).

22. The method of claim 11 , wherein the complexor is selected from citric acid, a citric acid salt, and EDTA.

23. The polishing composition of claim 1 , wherein the Co complexor comprises 2-Aminoethylphosphonic acid (AEPn), Dimethyl methylphosphonate (DMMP), or Tetramethylenediamine tetra(methylene phosphonic acid) (TDTMP).

24. The polishing composition of claim 1 , wherein the Co complexor comprises N-(phosphonomethyl)iminodiacetic acid (PMIDA), 2-carboxyethyl phosphonic acid (CEPA), or 2-Hydroxyphosphonocarboxylic acid (HPAA).

25. The polishing composition of claim 1 , wherein the Co complexor comprises N,N-bis(phosphonomethyl)glycine (glyphosine) (PMG), Iminodimethylenephosphonic acid (IDMP), 2-hydroxyphosphonoacetic acid (HPAA), or amino tri(methylenephosphonic acid) (ATMP).

Assignees

• Fujimi Inc

Inventors

• Miller Anne
• Granstrom Jimmy

Classifications

• H10P52/403 Primary

  of conductive or resistive materials · CPC title

• H01L21/3212 Primary

  Electricity · mapped topic

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09G1/02

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title