Vertical capacitors with spaced conductive lines

Patent metadata

Field	Value
Publication number	US-9576735-B2
Application number	US-201414298040-A
Country	US
Kind code	B2
Filing date	Jun 6, 2014
Priority date	Jun 6, 2014
Publication date	Feb 21, 2017
Grant date	Feb 21, 2017

Abstract

A capacitor structure includes a first metal layer including a first plurality of horizontally-spaced neutral conductive lines positioned horizontally between a first plurality of horizontally-spaced high voltage conductive lines. The capacitor structure further includes a second metal layer including a second plurality of horizontally-spaced neutral conductive lines positioned horizontally between a second plurality of horizontally-spaced high voltage conductive lines. The capacitor structure further includes a third metal layer positioned vertically below the first metal layer and above the second metal layer, the third metal layer including a third plurality of horizontally-spaced neutral conductive lines positioned horizontally between a first plurality of horizontally-spaced low voltage conductive lines. The first plurality of low voltage lines are positioned vertically between the first and second plurality of neutral lines.

First claim

What is claimed:

1. A capacitor structure, comprising:
a first metal layer comprising a first plurality of horizontally-spaced neutral conductive lines coupled to a neutral or floating voltage supply and positioned horizontally between a first plurality of horizontally-spaced high voltage conductive lines coupled to a high voltage supply and positioned in said first metal layer;
a second metal layer comprising a second plurality of horizontally-spaced neutral conductive lines coupled to said neutral or floating voltage supply and positioned horizontally between a second plurality of horizontally-spaced high voltage conductive lines coupled to said high voltage supply and positioned in said second metal layer; and
a third metal layer positioned vertically below said first metal layer and above said second metal layer, said third metal layer comprising a third plurality of horizontally-spaced neutral conductive lines coupled to said neutral or floating voltage supply and positioned horizontally between a first plurality of horizontally-spaced low voltage conductive lines coupled to a low voltage supply and positioned in said third metal layer, wherein said first plurality of low voltage lines are positioned vertically between and vertically aligned with said first and second plurality of neutral lines in said first and second metal layers.

2. The capacitor structure of claim 1 , wherein each of said first, second and third plurality of neutral lines are oriented in a direction parallel to one another.

3. The capacitor structure of claim 1 , wherein said third plurality of neutral lines are positioned vertically between and vertically aligned with said first plurality of high voltage lines and said second plurality of high voltage lines in said first and second layers.

4. The capacitor structure of claim 1 , wherein said second plurality of high voltage lines are positioned vertically below said first plurality of high voltage lines.

5. The capacitor structure of claim 1 , wherein said second plurality of neutral lines are positioned vertically below said first plurality of neutral lines.

6. The capacitor structure of claim 1 , wherein said first plurality of low voltage lines are laterally offset relative to said first plurality of high voltage lines and said second plurality of high voltage lines.

7. The capacitor structure of claim 1 , wherein said third plurality of neutral lines are laterally offset relative to said first plurality of neutral lines and said second plurality of neutral lines.

8. The capacitor structure of claim 1 , wherein said first plurality of low voltage lines are grounded.

9. The capacitor structure of claim 1 , wherein said first and second plurality of high voltage lines are adapted to conduct a voltage greater than 0 volts.

10. A capacitor structure, comprising:
a first metal layer comprising a first plurality of horizontally-spaced neutral conductive lines coupled to a neutral voltage supply coupled to a neutral or floating voltage supply and positioned horizontally between a first plurality of horizontally-spaced high voltage conductive lines coupled to a high voltage supply and positioned in said first metal layer;
a second metal layer comprising a second plurality of horizontally-spaced neutral conductive lines coupled to said neutral or floating voltage supply and positioned horizontally between a second plurality of horizontally-spaced high voltage conductive lines coupled to said high voltage supply and positioned in said second metal layer; and
a third metal layer positioned vertically below said first metal layer and above said second metal layer, said third metal layer comprising a third plurality of horizontally-spaced neutral conductive lines coupled to said neutral or floating voltage supply and positioned horizontally between alternating high and low voltage conductive lines, wherein said low voltage lines are positioned vertically between and vertically aligned with said first and second plurality of neutral lines.

11. The capacitor structure of claim 10 , wherein each of said first, second and third plurality of neutral lines are oriented in a direction parallel to one another.

12. The capacitor structure of claim 10 , wherein said third plurality of neutral lines are positioned vertically between and vertically aligned with said first plurality of high voltage lines and said second plurality of high voltage lines.

13. The capacitor structure of claim 10 , wherein said second plurality of high voltage lines are positioned vertically below said first plurality of high voltage lines.

14. The capacitor structure of claim 10 , wherein said second plurality of neutral lines are positioned vertically below said first plurality of neutral lines.

15. The capacitor structure of claim 10 , wherein said first plurality of low voltage lines are laterally offset relative to said first plurality of high voltage lines and said second plurality of high voltage lines.

16. The capacitor structure of claim 10 , wherein said high voltage lines are positioned vertically between said first plurality of high voltage lines and said second plurality of high voltage lines.

17. The capacitor structure of claim 10 , wherein said first and second plurality of high voltage lines and said high voltage lines are adapted to conduct a voltage of greater than 0 volts.

18. The capacitor structure of claim 17 , wherein said low voltage lines are adapted to conduct a voltage less than that of said high voltage lines.

19. The capacitor structure of claim 10 , wherein said first and second plurality of high voltage lines are five times the width of said low voltage lines.

20. A capacitor structure, comprising:
a first metal layer comprising a first neutral conductive line coupled to a neutral or floating voltage supply and positioned horizontally adjacent to a high voltage conductive line; and
a second metal layer positioned vertically above said first metal layer, said second metal layer comprising a second neutral conductive line coupled to said neutral or floating voltage supply and positioned horizontally adjacent to a low voltage line coupled to a low voltage supply, wherein said high voltage line is positioned vertically diagonal to said low voltage line, and wherein all the voltage lines are oriented in a direction parallel to one another.

Assignees

• Globalfoundries Inc

Inventors

• Augur Roderick Alan
• Stephens Jason Eugene

Classifications

• H10W20/496 Primary

  Capacitor integral with wiring layers · CPC title

• H01G4/01

  Form of self-supporting electrodes · CPC title

• H01G4/005

  Electrodes · CPC title

• H01G4/30 Primary

  Stacked capacitors (H01G4/33 takes precedence) · CPC title

• H01G4/06

  Solid dielectrics · CPC title