Conductive thin film and transparent electrode including graphene oxide and carbon nanotube, and methods of producing the same

Patent metadata

Field	Value
Publication number	US-9576707-B2
Application number	US-201313951993-A
Country	US
Kind code	B2
Filing date	Jul 26, 2013
Priority date	Jan 26, 2011
Publication date	Feb 21, 2017
Grant date	Feb 21, 2017

Abstract

A conductive thin film, a transparent electrode, and methods of producing the same are provided. A method for preparing a conductive thin film may involve forming a layer of reduced graphene oxide and carbon nanotube on a substrate using a reducing agent containing a halogen atom.

First claim

What is claimed is:

1. A method for preparing a conductive thin film, the method comprising:
forming a layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid on a substrate using a reducing agent containing a halogen atom.

2. The method of claim 1 , wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by:
(S1) coating the substrate with a liquid having one of (a) a graphene oxide and carbon nanotube having a surface is modified by carboxylic acid, (b) a graphene oxide and a carbon nanotube, and (c) a reduced graphene oxide and a carbon nanotube, dispersed therein; and
(S2) exposing the substrate obtained in S1 to a vapor of a solution comprising the reducing agent.

3. The method of claim 2 , further including:
centrifuging and sonifying the liquid before coating the substrate.

4. The method of claim 2 , further including:
performing heat treatment of the substrate exposed to the vapor under H 2 atmosphere.

5. The method of claim 4 , wherein the heat treatment of the substrate is performed under the H 2 atmosphere at a temperature of 80° C. or greater and 150° C. or less, and the substrate is a polyethylene terephthalate.

6. The method of claim 4 , wherein the heat treatment of the substrate is performed under the H 2 atmosphere at a temperature of 100° C. or greater to 1500° C. or less, and the substrate is a glass or a Si/SiO 2 .

7. The method of claim 2 , wherein a surfactant is used to disperse a carbon nanotube in a solvent and the solvent is coated on the substrate to form the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid.

8. The method of claim 7 , wherein the surfactant is one selected from the group consisting of sodium dodecyl sulfate (SDS), sodium octylbenzene sulfonate (NaOBS), sodium dodecylbenzene sulfate (SDBS), TRITON X-100, sodium dodecyl sulfonate (SDSA), sodium butylbenzoate (NaBBS), dodecyl trimethyl ammonium bromide (DTAB), cetyl trimethyl ammonium bromide (CTAB), dextrin, polystyrene-polyethylene oxide (PS-PEO) and a combination thereof.

9. The method of claim 1 , wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by:
(S1) coating the substrate with a liquid in which a graphene oxide is dispersed;
(S2) exposing the substrate obtained in S1 to a vapor of a solution comprising the reducing agent;
(S3) coating the substrate obtained in S2 with a liquid in which carbon nanotube having a surface modified by carboxylic acid is dispersed; and
(S4) exposing the substrate obtained in S3 to a vapor of a solution comprising the reducing agent.

10. The method of claim 1 , wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by:
(S1) coating the substrate with a liquid in which a graphene oxide is dispersed;
(S2) exposing the substrate obtained in S1 to a vapor of a solution comprising the reducing agent; and
(S3) coating the substrate obtained in S2 with a dispersion liquid in which a carbon nanotube is dispersed in a solvent.

11. The method of claim 1 , wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by:
(S1) coating a substrate with a liquid in which a graphene oxide is dispersed;
(S2) coating the substrate obtained in S1 with a liquid in which carbon nanotube having a surface modified by carboxylic acid is dispersed; and
(S3) exposing the substrate obtained in S2 to a vapor of a solution comprising the reducing agent.

12. The method of claim 1 , wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by:
(S1) coating the substrate with a liquid in which carbon nanotube having a surface modified by carboxylic acid is dispersed;
(S2) coating the substrate obtained in S1 with a liquid in which a graphene oxide is dispersed; and
(S3) exposing the substrate obtained in S2 to a vapor of a solution comprising the reducing agent.

13. The method of claim 1 , wherein the substrate comprises one of glass, Si/SiO 2 and polyethylene terephthalate.

14. The method of claim 1 , wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by:
coating the substrate with a liquid comprising graphene oxide or carbon nanotube,
wherein coating is performed using one of a spin coating method, a dip coating method, a bar coater method and a spray coating method.

15. The method of claim 1 , wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by:
coating the substrate with a liquid comprising graphene oxide or carbon nanotube, the coating involving a spin coating method with the rotation speed of the spin coating ranging from 400 rpm to 6000 rpm.

16. The method for claim 1 , wherein the reducing agent containing the halogen atom is selected from the group consisting of HI, HCl and HBr.

17. The method of claim 1 , further comprising:
doping the substrate and the layer comprising graphene oxide and carbon nanotube having a surface modified by carboxylic acid with a dopant selected from the group consisting of HNO 3 , H 2 SO 4 , and SOCl 2 by exposing the substrate and the layer to a vapor of the respective dopant.

18. A method for preparing a conductive thin film, the method comprising:
forming a layer comprising reduced graphene oxide and carbon nanotube on a substrate using a reducing agent containing a halogen atom,
wherein graphene oxide on the substrate is reduced using a vapor of a solution that comprises the reducing agent containing the halogen atom, and
wherein the solution comprises a mixture of HI solution and a weak acid.

19. The method of claim 18 , wherein the weak acid is selected from the group consisting of acetic acid, trifluoroacetic acid, carbonic acid, formic acid and benzoic acid.

Assignees

• Univ Sungkyunkwan Res & Bus

Inventors

• Lee Hyoyoung
• Hwang Eun Hee
• Lee Hye Mi
• Lee Jung Hyun
• Lee Eun Kyo
• Kim Gi Youn

Classifications

• C03C2217/28

  Other inorganic materials · CPC title

• C03C17/22 Primary

  with other inorganic material (C03C17/34, C03C17/44 take precedence) · CPC title

• H01L31/022466

  Electricity · mapped topic

• H01B1/04

  mainly consisting of carbon-silicon compounds, carbon or silicon · CPC title

• H01L51/442

  Electricity · mapped topic