THz radiation detection in standard CMOS technologies based on thermionic emission

Patent metadata

Field	Value
Publication number	US-9574945-B2
Application number	US-201615067521-A
Country	US
Kind code	B2
Filing date	Mar 11, 2016
Priority date	Apr 15, 2015
Publication date	Feb 21, 2017
Grant date	Feb 21, 2017

Abstract

A detector of terahertz (THz) energy includes a MOSFET having an extended source region, and a channel region depleted of free carriers, which MOSFET operates in a sub-threshold voltage state and has an output that is an exponential function of THz energy supplied to the gate.

First claim

The invention claimed is:

1. A detector of terahertz (THz) energy configured to operate in a thermionic emission mode and comprising:
a MOSFET having an extended source region, a channel region controlled by a gate, and a drain region;
a gate-to-source voltage source configured to deplete the channel region of free carriers thereby placing the MOSFET in a sub-threshold voltage state; and
said MOSFET being configured to operate in said thermionic emission mode to provide an output that is a measure of THz energy supplied to the gate.

2. The detector of claim 1 in which the output is an exponential function of the THz energy supplied to the gate.

3. The detector of claim 1 in which the output increases with increase of a size of the source region.

4. The detector of claim 1 in which the output increases with increase of a resistance of the source region.

5. The detector of claim 1 further including at least one THz antenna responsive to said THz energy and coupled with said gate.

6. The detector of claim 1 further including additional MOSFETs arranged in a detector array and configured to provide an image of an object traversed by or emitting the THz energy.

7. The detector of claim 1 in which the MOSFET is configured to operate in a photo-voltaic readout mode in which the detector output is integrated over selected time intervals to form a time succession of integrated detector output signals.

8. The detector of claim 1 including a readout resistor configured to convert drain-source current of the MOSFET to an output voltage.

9. The detector of claim 1 further including a communication network configured to supply information-modulated THz energy to the detector.

10. The detector of claim 1 in which the MOSFET is configured to provide spectral information regarding the THz energy.

11. The detector of claim 1 including a self-biasing circuit connecting the MOSTET's gate and drain and configured to increase a dynamic range of the detector.

12. A detector of terahertz (THz) energy comprising:
a transistor having an extended source region, a channel region controlled by a gate, and a drain region;
a gate-to-source voltage source configured to deplete the channel region of free carriers thereby placing the transistor in a sub-threshold voltage state; and
said transistor providing an output that is an exponential function of THz energy supplied to the gate while the transistor is in said sub-threshold voltage state.

13. The detector of claim 12 in which the output increases with increase of a resistance of the source region.

14. The detector of claim 12 further including at least one THz antenna responsive to said THz energy and coupled with said gate.

15. The detector of claim 12 further including additional transistors arranged in a detector array and configured to provide an image of an object traversed by or emitting the THz energy.

16. The detector of claim 12 further including a communication network configured to supply information-modulated THz energy to the detector.

17. The detector of claim 12 in which the transistor is configured to provide spectral Information regarding the THz energy.

18. The detector of claim 12 including a self-biasing circuit connecting the transistor's gate and drain and configured to increase a dynamic range of the detector.

19. The detector of claim 12 including an additional transistor having a drain, source, and gate and responsive to THz energy supplied to its gate to provide an output that is an exponential function of THz energy supplied to its gate, wherein the drains of the two transistors are coupled to each other.

20. An THz energy imaging system comprising:
an array of transistors each having an extended source region, a channel region controlled by a gate, and a drain region;
a gate-to-source voltage source configured to deplete the channel region of each of the transistors in the array of free carriers thereby placing each of the transistors in a sub-threshold voltage state; and
each of said transistor providing a respective output that is an exponential function of THz energy supplied to its gate while the transistor is in its sub-voltage state.

Assignees

• Univ Rochester

Inventors

• Ignjatovic Zeljko
• Dery Hanan

Classifications

• G01J5/00

  Radiation pyrometry, e.g. infrared or optical thermometry · CPC title

• H01L31/112

  Electricity · mapped topic

• G01J5/20

  using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices · CPC title

• G01J2005/106

  Arrays · CPC title

• G01J5/0837 Primary

  Microantennas, e.g. bow-tie · CPC title