Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer

US9574108B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9574108-B2
Application numberUS-201414259845-A
CountryUS
Kind codeB2
Filing dateApr 23, 2014
Priority dateAug 8, 2013
Publication dateFeb 21, 2017
Grant dateFeb 21, 2017

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product that includes a structural unit represented by the following Chemical Formula 1:

First claim

Opening claim text (preview).

What is claimed is: 1. A composition for forming a silica-based insulation layer, the composition comprising: a solvent; and an organosilane-based condensation polymerization product that includes a structural unit represented by the following Chemical Formula 1: wherein, in the above Chemical Formula 1, R 1 includes hydrogen, a hydroxy group, a C1 to C4 alkyl group, a C6 to C20 aryl group, a vinyl group, or a combination thereof, R 2 to R 4 each independently include hydrogen, a hydroxy group, a C1 to C20 alkoxy group, a halogen-containing group, a silicon-containing group, or a combination thereof, provided that the repeating unit bracketed by x is different from the repeating unit bracketed by y, m is an integer of 1 to 6, and x, y, and z represent a relative mole ratio of each repeating unit, and satisfy the following relations: 0.05≦x≦0.50, 0.45≦y≦0.90, 0.05≦z≦0.50, and x+y+z=1. 2. The composition for forming a silica-based insulation layer as claimed in claim 1 , wherein the organosilane-based condensation polymerization product has a weight average molecular weight (Mw) of about 3,000 to about 20,000. 3. The composition for forming a silica-based insulation layer as claimed in claim 1 , wherein the organosilane-based condensation polymerization product is included in an amount of about 0.1 wt % to about 50 wt %, based on a total weight of the composition. 4. The composition for forming a silica-based insulation layer as claimed in claim 1 , further comprising a thermal acid generator. 5. A silica-based insulation layer prepared from the composition for forming a silica-based insulation layer as claimed in claim 1 . 6. The silica-based insulation layer as claimed in claim 5 , wherein the insulation layer has a dielectric constant (k) of about 1.9 to about 3.5. 7. The silica-based insulation layer as claimed in claim 5 , wherein the insulation layer has a modulus (E) of about 4 GPa to about 18 GPa. 8. A method of manufacturing a silica-based insulation layer, the method comprising coating the composition for forming a silica-based insulation layer as claimed in claim 1 on a substrate; drying the substrate coated with the composition for forming a silica-based insulation layer; and curing the resultant at about 200° C. or more under an inert gas atmosphere. 9. The composition for forming a silica-based insulation layer as claimed in claim 1 , wherein, in Chemical Formula 1, R 1 includes a hydroxy group, a C1 to C4 alkyl group, a C6 to C20 aryl group, a vinyl group, or a combination thereof. 10. A method of forming a silica based insulating layer, the method comprising: reacting trialkoxysilane, bis(trialkoxy)silylalkane, and alkyltrialkoxysilane by a condensation reaction spin-coating the resultant in layer on a substrate, and heat curing the spin-coated layer. 11. A silica-based insulation layer prepared from the method as claimed in claim 10 .

Assignees

Inventors

Classifications

  • the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

  • the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

  • Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

  • Polysilicates · CPC title

  • Insulating-layers or insulating-films on metal bodies · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9574108B2 cover?
A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product that includes a structural unit represented by the following Chemical Formula 1:
Who is the assignee on this patent?
Park Eun-Su, Kwak Taek-Soo, Na Yoong-Hee, and 4 more
What technology area does this patent fall under?
Primary CPC classification C09D183/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Feb 21 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).