Method for manufacturing ultrathin organic light-emitting device

Patent metadata

Field	Value
Publication number	US-9570709-B2
Application number	US-201414905616-A
Country	US
Kind code	B2
Filing date	Jul 16, 2014
Priority date	Jul 16, 2013
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

The present invention relates to a method for manufacturing an ultrathin organic light-emitting device and, more specifically, to a method for manufacturing an ultrathin organic light-emitting device capable of dramatically reducing the thickness thereof, in addition to improving light extraction efficiency. To this end, the present invention provides a method for manufacturing an ultrathin organic light-emitting device, comprising: a polymer material coating step for coating a polymer material onto a support; a frit coating step for coating a frit paste onto the polymer material; a heat treatment and separation step for conducting heat treatment at a temperature at which the polymer material breaks down, thereby separating the support and a frit substrate which has been formed by heat-treating the frit paste; and a device layer forming step for forming, in sequence, a device layer comprising a first electrode, a device layer comprising an organic light-emitting layer, and a device layer comprising a second electrode, on one side of the frit substrate which has been in contact with the polymer material.

First claim

What is claimed is:

1. A method for manufacturing an ultrathin organic light-emitting device, comprising:
coating a support with a polymeric material;
forming an overlayer on the polymeric material, forming the overlayer comprising coating the polymeric material with frit paste;
heat-treating a resultant structure at a temperature where the polymeric material decomposes such that a light extraction substrate formed from the overlayer through the heat treatment is separated from the support, the light extraction substrate comprising a frit substrate formed from the frit paste through the heat treatment; and
forming a device layer on one surface of the light extraction substrate which has coated the polymeric material, the device layer comprising a first electrode, an organic light-emitting layer and a second electrode which are sequentially disposed on the one surface of the frit substrate.

2. The method according to claim 1 , wherein the polymeric material is coated with the frit paste such that a thickness of the frit substrate ranges from 4 to 5 μm.

3. The method according to claim 1 , wherein the polymeric material comprises one selected from the group of candidate polymeric materials consisting of polydimethylsiloxane, photoresist and polyimide.

4. The method according to claim 1 , wherein the temperature where the resultant structure is heat-treated ranges from 400 to 600° C.

5. The method according to claim 1 , wherein, after the light extraction substrate is separated from the support, a surface roughness of the other surface of the light extraction substrate is higher than a surface roughness of the one surface of the light extraction substrate.

6. The method according to claim 5 , wherein the surface roughness of the one surface of the light extraction substrate ranges from 0.4 to 0.5 nm.

7. The method according to claim 1 , wherein a total of a thickness of the frit substrate and a thickness of the device layer is 10 μm or less.

8. The method according to claim 1 , wherein
forming the overlayer further comprises coating the polymeric material with a metal oxide that contains light-scattering particles therein such that a layer of the metal oxide is disposed between a layer of the polymeric material and a layer of the frit paste; and
the light extraction substrate further comprises a metal oxide layer formed from the metal oxide through the heat treatment.

9. The method according to claim 8 , wherein the polymeric material is coated with the metal oxide and the frit paste such that a thickness of the light extraction substrate ranges from 5 to 20 μm.

10. The method according to claim 8 , wherein the polymeric material coating the support comprises one selected from the group of candidate polymeric materials consisting of polydimethylsiloxane, photoresist and polyimide.

11. The method according to claim 8 , wherein the temperature where the resultant structure is heat-treated ranges from 400 to 600° C.

12. The method according to claim 8 , wherein, after the stack is separated from the support, a surface roughness of the other surface of the light extraction substrate is higher than a surface roughness of the one surface of the light extraction substrate.

13. The method according to claim 12 , wherein the surface roughness of the one surface of the light extraction substrate ranges from 0.4 to 0.5 nm.

14. The method according to claim 8 , wherein the metal oxide layer is an internal light extraction layer for an organic light-emitting device.

Assignees

• Corning Prec Materials Co Ltd

Inventors

• Lee Joo Young
• Choi Eun Ho
• Lee Hyun Hee

Classifications

• H10K71/40

  Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title

• H10K50/854 Primary

  comprising scattering means · CPC title

• H10K77/10 Primary

  Substrates, e.g. flexible substrates · CPC title

• H01L51/5268 Primary

  Electricity · mapped topic

• H01L2251/303

  Electricity · mapped topic