Semiconductor light-emitting device

Patent metadata

Field	Value
Publication number	US-9570655-B2
Application number	US-201213979554-A
Country	US
Kind code	B2
Filing date	Jan 5, 2012
Priority date	Jan 18, 2011
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

Provided is a light-emitting device that has a high emission efficiency, excellent stability and temperature properties, and that generates light having a high color rendering property sufficient for practical use. This semiconductor light-emitting device ( 1 ) comprises a semiconductor light-emitting element ( 2 ) that emits blue light, a green phosphor ( 14 ) that absorbs the blue light and emits green light, and an orange phosphor ( 13 ) that absorbs the blue light and emits orange light, and is characterized in that the orange phosphor is an Eu-activated α-SiAlON phosphor having an emission spectrum peak wavelength within a range of 595 to 620 nm.

First claim

The invention claimed is:

1. A semiconductor light-emitting device comprising:
a semiconductor light-emitting element that emits blue light;
a green fluorescent material that absorbs the blue light to emit green light;
an orange fluorescent material that absorbs the blue light to emit orange light, wherein
a light emission peak wavelength of the semiconductor light-emitting element is in a range of 440 to 470 nm; and
the orange fluorescent material is an Eu-activated α SiAlON fluorescent material that has a peak wavelength of a light emission spectrum in a range of 605 to 620 nm, wherein
a specific surface area of the Eu-activated α SiAlON fluorescent material is 0.4 m2/g or smaller, and wherein
the mass ratio of the green fluorescent material to the orange fluorescent material is in the range of 0.5 to 4.0.

2. The semiconductor light-emitting device according to claim 1 , wherein
the Eu-activated α SiAlON is an Eu-activated α SiAlON that is indicated by a general formula (CaxEuy) (Si12−(m+n) Alm+n) (OnN16−n) and designed with a composition that meets:
1.1≦ x≦ 2.0  (1)

0< y< 0.4  (2)

1.5< x+y< 2.0  (3)

3.0≦ m< 4.0  (4)

0≦ n<y   (5).

3. The semiconductor light-emitting device according to claim 1 , wherein
the Eu-activated α SiAlON fluorescent material is an Eu-activated α SiAlON fluorescent material that is indicated by a general formula (CaxEuy) (Si12−(m+n) Alm+n) (OnN16−n) and designed with a composition that meets:
1.1≦ x< 1.85  (1′)

0.15< y< 0.4  (2′)

1.5< x+y< 2.0  (3′)

3.0≦ m< 4.0  (4′)

0≦ n<y   (5′).

4. The semiconductor light-emitting device according to claim 1 , wherein
an average particle diameter of the Eu-activated α SiAlON fluorescent material is 15 μm or more.

5. The semiconductor light-emitting device according to claim 1 , wherein
a peak wavelength of a light emission spectrum of the green fluorescent material is in a range of 520 nm to 550 nm.

6. The semiconductor light-emitting device according to claim 5 , wherein
a half width of the light emission spectrum of the green fluorescent material is 55 nm or smaller.

7. The semiconductor light-emitting device according to claim 1 , wherein
an absorptivity of the green fluorescent material is 10% or smaller at 600 nm.

8. The semiconductor light-emitting device according to claim 1 , wherein
the green fluorescent material is an Eu-activated β SiAlON fluorescent material.

9. The semiconductor light-emitting device according to claim 8 , wherein
an oxygen concentration of the Eu-activated β SiAlON fluorescent material is in a range of 0.1 to 0.6% by weight.

Assignees

• Yoshimura Kenichi
• Takahashi Kohsei
• Fukunaga Hiroshi
• Sharp Kk

Inventors

• Yoshimura Kenichi
• Takahashi Kohsei
• Fukunaga Hiroshi

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• C09K11/77348

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title

• C09K11/0883 Primary

  Arsenides; Nitrides; Phosphides · CPC title

• H01L33/504

  Electricity · mapped topic