Wafer level optical proximity sensors and systems including wafer level optical proximity sensors

Patent metadata

Field	Value
Publication number	US-9570648-B2
Application number	US-201313761708-A
Country	US
Kind code	B2
Filing date	Feb 7, 2013
Priority date	Jun 15, 2012
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

Optoelectronic devices (e.g., optical proximity sensors), methods for fabricating optoelectronic devices, and systems including optoelectronic devices, are described herein. An optoelectronic device includes a light detector die that includes a light detector sensor area. A light source die is attached to a portion of the light detector die that does not include the light detector sensor area. An opaque barrier is formed between the light detector sensor area and the light source die, and a light transmissive material encapsulates the light detector sensor area and the light source die. Rather than requiring a separate base substrate (e.g., a PCB substrate) to which are connected a light source die and a light detector die, the light source die is connected to the light detector die, such that the light detector die acts as the base for the finished optoelectronic device. This provides for cost reductions and reduces the total package footprint.

First claim

What is claimed:

1. An optical proximity sensor, comprising:
a light detector die having a planar top surface that includes a light detector sensor area and first and second bond pads on a portion of the planar top surface of the light detector die that does not include the light detector sensor area, the light detector die also including a planar bottom surface, wherein a thickness between the planar top and bottom surfaces of the light detector die is substantially constant;
a light source die having a planar bottom surface attached to a portion of the planar top surface of the light detector die that does not include the light detector sensor area, such that the planar bottom surface of the light source die is substantially coplanar with the planar top surface of the light detector die, wherein the light source die includes anode and cathode terminals, wherein one of the anode and cathode terminals of the light source die is located on the planar bottom surface of the light source die and is attached to and electrically connected to the first bond pad on the planar top surface of the light detector die by an electrically conductive material, and wherein the other one of the anode and cathode terminals of the light source die is electrically connected to the second bond pad on the planar top surface of the light source die;
an opaque barrier formed on, and extending upward from, the planar top surface of the light detector die between the light detector sensor area and the light source die so that the entire light source die is on an opposite side of the opaque barrier than the light detector sensor area;
the opaque barrier being a wafer level opaque barrier and having a height relative to the planar top surface of the light detector die that is greater than a thickness between the planar bottom surface of the light source die and a top surface of the light source die;
solder balls or other electrical connectors for both the light detector sensor area and the light source die attached to the bottom surface of the light detector die; and
vias in the light detector die that electrically connect the light detector sensor area and the anode and cathode terminals of the light source die to respective ones of the solder balls or other electrical connectors that are attached to the bottom surface of the light detector die;
wherein the vias in the light detector die include first and second vias that respectively electrically connect the first and second bond pads on the planar top surface of the light detector die to respective ones of the solder balls or other electrical connectors that are attached to the bottom surface of the light detector die, thereby electrically connecting the anode and cathode terminals of the light source die to the respective ones of the solder balls or other electrical connectors that are attached to the bottom surface of the light detector die.

2. The optical proximity sensor of claim 1 , wherein:
the light detector die provides a base substrate for the light source die and the wafer level opaque barrier, thereby eliminating a need for a separate base substrate to which to connect the light source die and the light detector die and to support an opaque barrier therebetween; and
all of the solder balls or other electrical connectors of the optical proximity sensor are attached to the bottom surface of the light detector die, thereby eliminating a need for a separate substrate to which to attach the solder balls or other electrical connectors of the optical proximity sensor.

3. The optical proximity sensor of claim 1 , further comprising:
a wafer level light transmissive material that encapsulates the light detector sensor area and the light source die.

4. The optical proximity sensor of claim 3 , wherein:
the wafer level opaque barrier is formed from an opaque material;
the wafer level light transmissive material comprises a clear epoxy; and
the opaque material comprises an opaque solder mask material.

5. The optical proximity sensor of claim 1 , wherein only one of the anode and cathode terminals of the light source die is located on the bottom surface of the light source die and the other one of the anode and cathode terminals is located on the top surface of the light source die, and the optical proximity sensor further comprising:
a bond wire that electrically connects the one of the anode and cathode terminals that is located on the top surface of the light source die to the second bond pad on the portion of the planar top surface of the light detector die that does not include the light detector.

6. The optoelectronic proximity sensor of claim 1 , further comprising:
a peripheral opaque barrier formed on, and extending upward from, an entire periphery of the planar top surface of the light detector die, the peripheral opaque barrier configured to optically isolate the optical proximity sensor from one or more other optoelectronic device(s) that may be located in the vicinity of the optical proximity sensor.

7. A system, comprising:
an optical proximity sensor including:
a light detector die having a planar top surface that includes a light detector sensor area and first and second bond pads on a portion of the planar top surface of the light detector die that does not include the light detector sensor area, the light detector die also including a planar bottom surface, wherein a thickness between the planar top and bottom surfaces of the light detector die is substantially constant;
a light source die having a planar bottom surface attached to the portion of the planar top surface of the light detector die that does not include the light detector sensor area, such that the planar bottom surface of the light source die is substantially coplanar with the planar top surface of the light detector die, wherein the light source die includes anode and cathode terminals, wherein one of the anode and cathode terminals of the light source die is located on the planar bottom surface of the light source die and is attached to and electrically connected to the first bond pad on the planar top surface of the light detector die, and wherein the other one of the anode and cathode terminals of the light source die is electrically connected to the second bond pad on the planar top surface of the light source die; and
a wafer level opaque barrier formed on, and extending upward from, the planar top surface of the light detector die between the light detector sensor area and the light source die so that the entire light source die is on an opposite side of the wafer level opaque barrier than the light detector sensor area;
solder balls or other electrical connectors for both the light detector sensor area and the light source die attached to the bottom surface of the light detector die; and
first and second vias in the light detector die that respectively electrically connect the first and second bond pads to corresponding ones of the solder balls or other electrically connectors that are attached to the bottom surface of the light detector die, thereby electrically connecting the anode and cathode terminals of the light source die to the corresponding one of the solder balls or other electrical connectors that are attached to the bottom surface of the light detector die;

a driver configured to selectively drive the light source die;
a processor or comparator configured to compare, to one or more thresholds, a signal generated by the light detector die that is indicative of light incident on the light detector sensor area; and
a subsystem that is controlled by the processor or comparator in response to the signal generated by the light detector die.

8. The system of claim 7 , further comprising:
a wafer level light transmissiv

Assignees

• Intersil Americas LLC

Inventors

• Tharumalingam Sri Ganesh A
• Wong Seck Jiong

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W72/0198

  batch processes · CPC title

• G01S17/04

  Systems determining the presence of a target · CPC title

• G01S7/4813

  Housing arrangements · CPC title