Method of Forming Semiconductor Device
US-2024379727-A1 · Nov 14, 2024 · US
US9570490B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9570490-B2 |
| Application number | US-201113302475-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 22, 2011 |
| Priority date | Dec 10, 2010 |
| Publication date | Feb 14, 2017 |
| Grant date | Feb 14, 2017 |
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There are provided an infrared transmission filter, which is inexpensive, is capable of being sufficiently made lighter and thinner, has no incident angle dependency, and is excellent in permselectivity for infrared light, and an imaging device, which employs such an infrared transmission filter. An infrared transmission filter 10 includes an infrared transmission base material 1 selectively transmitting light in an infrared wavelength range; and a short wavelength side infrared absorbing film 2 formed on one side of the infrared transmission base material 1 and containing a near-infrared absorbent having an optical absorption edge on a short wavelength side of a transmission wavelength band of the infrared transmission base material. An imaging device includes the infrared transmission filter 10.
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What is claimed is: 1. An infrared transmission filter, comprising: an infrared transmission base material having a transmission wavelength band in an infrared wavelength range, and selectively transmitting light within the transmission wavelength band; and a short wavelength side infrared absorbing film formed on one side of the infrared transmission base material, transmitting light in at least a part of a visible wavelength range, and comprising a near-infrared absorbent, wherein the near-infrared absorbent has an optical absorption edge on a short wavelength side of the transmission wavelength band, and an absorption of infrared light by the near-infrared absorbent decreases as a wavelength increases from the wavelength of the optical absorption edge, wherein the infrared transmission filter has a transmission wavelength band in an infrared wavelength range, and transmits light within the transmission wavelength band, wherein a light transmittance at a short wavelength side of the transmission wavelength band of the infrared transmission filter changes more abruptly than a light transmittance at the short wavelength side of the transmission wavelength band of the infrared transmission base material, and wherein the infrared transmission filter cuts off light in the visible wavelength range. 2. The infrared transmission filter according to claim 1 , wherein the near-infrared absorbent has the optical absorption edge at a wavelength of from 730 to 830 nm. 3. The infrared transmission filter according to claim 1 , wherein the infrared transmission base material comprises a transparent material and a visible light absorbent which absorbs light in a visible wavelength range and which is contained in the transparent material. 4. The infrared transmission filter according to claim 1 , wherein the infrared transmission base material comprises a transparent base material and a visible light absorbing film formed on one side of the transparent base material and comprising a visible light absorbent which absorbs light in a visible wavelength range. 5. The infrared transmission filter according to claim 1 , wherein the infrared transmission base material comprises a transparent base material and a visible light reflection film formed on one side of the transparent base material and comprising a multilayer dielectric film reflecting light in a visible wavelength range, the short wavelength side infrared absorbing film being formed on the other side of the transparent base material. 6. The infrared transmission filter according to claim 1 , further comprising a long wavelength side infrared reflection film, which comprises a multilayer dielectric film reflecting light which has a wavelength longer than a wavelength within the transmission wavelength band of the infrared transmission base material. 7. The infrared transmission filter according to claim 6 , wherein the long wavelength side infrared reflection film reflects light having a wavelength within a reflection wavelength band of from 860 to 1,100 nm for light vertically entering. 8. The infrared transmission filter according to claim 6 , wherein the multilayer dielectric film comprises a multilayer dielectric film having low refractive index dielectric layers and high refractive index dielectric layers alternately stacked; wherein when the low refractive index dielectric layers have an optical film thickness of n L d L and the high refractive index dielectric layers have an optical film thickness of n H d H , the number of the dielectric layers satisfying the formula of n H d H /n L d L ≧5 is at least 10, and the total number of the dielectric layers is at least 15. 9. The infrared transmission filter according to claim 1 , further comprising a short wavelength side infrared reflection film, which comprises a multilayer dielectric film reflecting light which has wavelength shorter than a wavelength within the transmission wavelength band of the infrared transmission base material. 10. The infrared transmission filter according to claim 9 , wherein the short wavelength side infrared reflection film reflects light having a wavelength within a reflection wavelength band of from 700 to 830 nm for light vertically entering. 11. The infrared transmission filter according to claim 9 , wherein the multilayer dielectric film comprises a multilayer dielectric film having low refractive index dielectric layers and high refractive index dielectric layers alternately stacked; wherein when the low refractive index dielectric layers have an optical film thickness of n L d L and the high refractive index dielectric layers have an optical film thickness of n H d H , the number of the dielectric layers satisfying the formula of n H d H /n L d L ≧5 is at least 10, and the total number of the dielectric layers is at least 15. 12. The infrared transmission filter according to claim 1 , wherein the infrared transmission filter has a transmittance change rate D′ of at least 1% /nm, the transmittance variation being represented by formula: D ′(%/nm)=[ T 810 (%)− T 760 (%)]/[810 (nm)−760 (nm)] where, T 810 is the transmittance of a wavelength of 810 nm in a spectral transmittance curve, and T 760 is the transmittance of a wavelength of 760 nm in the spectral transmittance curve. 13. The infrared transmission filter according to claim 1 , wherein the infrared transmission base material has a thickness of from 0.1 to 3 mm. 14. The infrared transmission filter according to claim 1 , wherein the short wavelength side infrared absorbing film has a thickness of from 0.01 to 100 μm. 15. An imaging device comprising the infrared transmission filter as defined in claim 1 . 16. The device according to claim 15 , wherein the device is an imaging device for motion capture employing light in a wavelength range of from 810 to 880 nm. 17. The device according to claim 16 , wherein the infrared transmission filter has a transmittance change rate D′ of at least 1%/nm, the transmittance variation being represented by formula: D ′(%/nm)=[ T 810 (%)− T 760 (%)]/[810 (nm)−760 (nm)] where, T 810 is the transmittance of a wavelength of 810 nm in a spectral transmittance curve, and T 760 is the transmittance of a wavelength of 760 nm in the spectral transmittance curve. 18. The infrared transmission filter according to claim 1 , wherein the infrared transmission filter cuts off light having a wavelength of from 400 to 700 nm. 19. An infrared transmission filter, comprising: an infrared transmission base material having a transmission wavelength band in an infrared wavelength range, and selectively transmitting light within the transmission wavelength band; and a short wavelength side infrared absorbing film formed on one side of the infrared transmission base material, transmitting light in at least a part of a visible wavelength range, and comprising a near-infrared absorbent, wherein the near-infrared absorbent has an optical absorption edge on a short wavelength side of the transmission wavelength band, and an absorption of infrared light by the near-infrared absorbent decreases as a wavelength increases from the wavelength of the optical absorption edge, wherein the infrared transmission filter has a transmission wavelength band in an infrared wavelength range, and transmits light within the transmission wavelength band, wherein a light transmittance at a short wavelength side of the transmission wavelength band of the infrared transmission filter changes more abruptly than a light transmittance at the short
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