Chip bonding apparatus and chip bonding method

Patent metadata

Field	Value
Publication number	US-9570417-B2
Application number	US-201514706752-A
Country	US
Kind code	B2
Filing date	May 7, 2015
Priority date	Dec 1, 2014
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

The chip bonding apparatus used in a chip bonding method includes a heating unit for heating an anisotropic conductive film at a first temperature; an attachment unit for attaching an integrated circuit chip to the anisotropic conductive film; a stage on which a substrate is seated; a chip transport unit for moving and aligning the integrated circuit chip that is attached to the anisotropic conductive film on the substrate; and a bonding head arranged above the stage to bond the integrated circuit chip that is attached to the anisotropic conductive film onto the substrate through thermo-compression of the integrated circuit chip onto the substrate at a second temperature that is lower than the first temperature.

First claim

What is claimed is:

1. A chip bonding method, comprising:
heating an anisotropic conductive film at a first temperature using a heating unit;
attaching an integrated circuit chip to the anisotropic conductive film using an attachment unit after the anisotropic conductive film is heated at the first temperature;
moving and aligning the integrated circuit chip attached to the anisotropic conductive film on a substrate seated on a stage using a chip transport unit; and
bonding the integrated circuit chip that is attached to the anisotropic conductive film onto the substrate through thermo-compression of the integrated circuit chip onto the substrate at a second temperature that is lower than the first temperature using a bonding head disposed on an upper portion of the stage.

2. The chip bonding method of claim 1 , wherein the heating the anisotropic conductive film comprises heating the anisotropic conductive film when the heating unit contacts the anisotropic conductive film.

3. The chip bonding method of claim 1 , wherein the heating the anisotropic conductive film comprises heating the anisotropic conductive film when the heating unit is spaced apart from the anisotropic conductive film.

4. The chip bonding method of claim 1 , wherein the first temperature comprises a temperature of 250° C. to 350° C., and the second temperature comprises a temperature of 20° C. to 30° C.

5. The chip bonding method of claim 1 , wherein the heating unit and the attachment unit are disposed in regions that are spaced apart from each other in a horizontal direction, and
the method further comprises:
moving the anisotropic conductive film from a region where the heating unit is disposed to a region where the attachment unit is disposed, the moving of the anisotropic conductive film being performed after the heating the anisotropic conductive film and before the attaching the integrated circuit chip to the anisotropic conductive film.

6. The chip bonding method of claim 1 , wherein:
the heating unit and the attachment unit are disposed in regions that are spaced apart from each other in a horizontal direction; and
the heating of the anisotropic conductive film comprises horizontally moving the heating unit to a region where the attachment unit is disposed before the attaching of the integrated circuit chip to the anisotropic conductive film.

7. The chip bonding method of claim 1 , wherein the heating unit and the attachment unit are disposed in the same region in a horizontal direction.

8. The chip bonding method of claim 1 , further comprising:
cutting a boundary portion between a heated area and a non-heated area of the adhesive layer of the anisotropic conductive film using a cutting unit, the cutting of the boundary portion being performed after the heating the anisotropic conductive film and before the attaching the integrated circuit chip to the anisotropic conductive film.

9. The chip bonding method of claim 8 , wherein the cutting the boundary portion between the heated area and the non-heated area of the adhesive layer of the anisotropic conductive film is performed on a support that provides an area where the heated anisotropic conductive film is supported.

10. The chip bonding method of claim 9 , wherein the attachment unit is disposed above the support and faces the adhesive layer of the anisotropic conductive film.

11. The chip bonding method of claim 1 , further comprising:
guiding the anisotropic conductive film that is wound on a winding roller to a region where the heating unit is disposed through a guide roller, the guiding of the anisotropic layer being performed before the heating of the anisotropic conductive film.

12. The chip bonding method of claim 11 , further comprising:
recovering the anisotropic conductive film through a recovery roller after the heating of the anisotropic conductive film.

Assignees

• Samsung Display Co Ltd

Inventors

• Jeong Seong Beom
• Kim Min Su

Classifications

• H10W72/0711 Primary

  Apparatus therefor · CPC title

• H10W72/07341

  Controlling the bonding environment, e.g. atmosphere composition or temperature · CPC title

• H10W72/07323

  Active alignment, e.g. using optical alignment using marks or sensors · CPC title

• H10W72/07311

  Treating the bonding area before connecting, e.g. by applying flux or cleaning · CPC title

• H10W72/01365

  Thermally treating (reflowing H10W72/01357) · CPC title