Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

Patent metadata

Field	Value
Publication number	US-9570271-B2
Application number	US-201514635413-A
Country	US
Kind code	B2
Filing date	Mar 2, 2015
Priority date	Mar 3, 2014
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

First claim

The invention claimed is:

1. A dopant gas composition comprising:
a boron-containing dopant gas composition comprising diborane (B2H6) at a level ranging from about 0.1%-10%, H 2 ranging from about 5%-15% and the balance is BF 3 , wherein said B2H6 is selected to have a ionization cross-section higher than that of said BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active boron ions;
wherein said boron-containing dopant gas composition increases boron ion beam current and extends ion source life in comparison to a beam current generated from boron trifluoride (BF3).

2. The dopant gas composition of claim 1 , wherein said B2H6 is at about 2-5%, said H2 is at a level ranging from about 5-10% and the balance is BF3.

3. The dopant composition of claim 1 , wherein said B2H6, said H2 and balance BF3 is supplied from a single storage and delivery source.

4. The dopant composition of claim 1 , wherein said B2H6 and BF3 are supplied in separate storage and delivery sources so as to create the boron-containing dopant composition within a chamber of said ion source.

5. The dopant composition of claim 1 , wherein said boron-containing gas composition is characterized by the absence of an inert gas.

6. A system for providing an improved beam current during boron ion implantation, comprising:
an ion source apparatus partially defined by an arc chamber wall, wherein the chamber comprises a boron ion source disposed at least partially within the chamber wall;
one or more supply vessels in fluid communication with said ion source apparatus, said vessels storing a boron-containing dopant gas composition, said composition comprising B2H6 at a level ranging from about 0.1%-10%, H 2 ranging from about 5%-15% and the balance is BF 3 , wherein said B2H6 is selected to have a ionization cross-section higher than that of said BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active boron ions;
one or more supply feed lines corresponding to the one or more supply vessels, said feed lines extending from the one or more supply vessels through the wall into the chamber;
said one or more vessels configured to dispense said boron-containing dopant composition through said supply feed lines and into said ion source apparatus thereby allowing the boron-containing composition to ionize and thereby generate active boron ions;
wherein the active boron ions produce an increased beam current in comparison to a beam current generated solely from BF3.

7. The system of claim 6 , wherein said wherein said B2H6 is at about 2-5%, said H2 is at a level ranging from about 5-10% and the balance is BF3.

8. The system of claim 6 , wherein a first supply vessel and a second supply vessel are provided as part of a gas kit, said first supply vessel comprising B2H6 in combination with H2, and said second supply vessel comprising BF3, each of said first and second supply vessel dispensing B2H6, H2 and BF3, respectively, to the ion source chamber at controlled flow rates to produce a boron-containing dopant composition within the chamber wherein said B2H6 is at about 2-5%, said H2 is at a level ranging from about 5-10% and the balance is BF3.

9. The system of claim 8 , wherein said gas kit comprises a first flow controller for regulating flow of said B2H6 and said H2 at a first flow rate from said first supply vessel, and said kit further comprises a second flow controller for regulating flow of said BF3 at a second flow rate from said second supply vessel.

10. The system of claim 6 , wherein a single supply vessel is pre-mixed with the boron-containing dopant gas composition, and further wherein said supply vessel is a sub-atmospheric storage and delivery vessel.

11. A method for increasing a quality of an ion beam current during boron ion implantation, comprising:
introducing a boron-containing dopant composition into an ion source chamber, said boron-containing dopant composition comprising B2H6 at alevel ranging from about 0.1%-10%, H 2 ranging from about 5%-15% and the balance as BF 3 ;
ionizing said B2H6 and said BF3 at a predetermined operating arc voltage at which said B2H6 has an ionization cross-section higher than that of said BF3;
generating active boron ions; and
producing an increased beam current having an extended source life in comparison to a beam current generated solely from BF3.

12. The method of claim 11 , wherein said boron-containing dopant composition is characterized by an absence of an inert gas.

13. The method of claim 11 , wherein a first supply vessel and a second supply vessel are provided as part of a gas kit, said first supply vessel comprising B2H6 in combination with H2, and said second supply vessel comprises BF3, said first vessel dispensing B2H6 and H2, and said second vessel dispensing said BF3 to the ion source chamber at controlled flow rates in a co-flowed or sequentially flowed manner to produce the boron-containing dopant composition within the chamber.

14. The method of claim 11 , wherein said predetermined operating arc voltage ranges from about 80 V-120 V.

15. The method of claim 11 , wherein a single supply vessel dispenses said boron-containing dopant composition into said chamber.

16. The dopant gas composition of claim 1 , wherein at least one of said B2H6 and said BF3 is isotopically enriched.

17. The system of claim 6 , wherein at least one of said B2H6 and said BF3 is isotopically enriched.

18. The method of claim 11 , wherein at least one of said B2H6 and said BF3 is isotopically enriched.

Assignees

• Sinha Ashwini K
• Smith Stanley M
• Heiderman Douglas C
• Campeau Serge M
• Praxair Technology Inc

Inventors

• Sinha Ashwini K
• Smith Stanley M
• Heiderman Douglas C
• Campeau Serge M

Classifications

• H01J37/32807

  Construction (includes replacing parts of the apparatus) · CPC title

• H01J37/32458

  Vessel · CPC title

• H01J2237/006

  Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece, (H01J37/3244 takes precedence; environmental cells for electron microscopes H01J2237/2003; microscopes with environmental specimen chamber H01J2237/2608) · CPC title

• H01J37/3171 Primary

  for ion implantation · CPC title

• H01J2237/08

  Ion sources · CPC title