Semiconductor pressure sensor, pressure sensor apparatus, electronic equipment, and method of manufacturing semiconductor pressure sensor

Patent metadata

Field	Value
Publication number	US-9568385-B2
Application number	US-201414322306-A
Country	US
Kind code	B2
Filing date	Jul 2, 2014
Priority date	Jul 24, 2009
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

A semiconductor pressure sensor ( 720 ) includes a thin film piezoelectric element ( 701 ) which applies strain to a portion of a semiconductor substrate that corresponds to a thin region ( 402 ). The thin film piezoelectric element ( 701 ) is formed at a distance away from diffusion resistors ( 406, 408, 410 , and 412 ) functioning as strain gauges and is extended to the proximity of a bonding pad ( 716 A) connected to an upper electrode layer of the thin film piezoelectric element and a bonding pad ( 716 F) connected to a lower electrode thereof. The diffusion resistors ( 406, 408, 410 , and 412 ) constitute a bridge circuit by metal wiring ( 722 ) and diffusion wiring ( 724 ). During self-diagnosis, a prescribed voltage is applied to a thin film piezoelectric element ( 701 ). If the output difference of the bridge circuit between before and after the voltage application falls outside a prescribed range, it is determined that a breakage occurs in the semiconductor pressure sensor ( 720 ).

First claim

The invention claimed is:

1. A pressure sensor apparatus comprising:
a sensor configured to change a signal voltage based on a pressure; and
a signal processing circuit for processing a signal output from said sensor,
said signal processing circuit including
an amplification circuit for amplifying said signal voltage, and
a first operation circuit for generating a first voltage changing in accordance with said pressure, based on an output voltage of said amplification circuit,

wherein said first operation circuit is configured to generate said first voltage by subtracting a voltage having a prescribed correlation with said output voltage of said amplification circuit from a prescribed offset voltage.

2. The pressure sensor apparatus according to claim 1 , wherein
said signal processing circuit further includes a second operation circuit for generating a second voltage changing in accordance with said pressure, based on said first voltage,
a first rate of change of said first voltage with respect to said pressure is different from a second rate of change of said second voltage with respect to said pressure, and
said first voltage corresponds to said second voltage, at an upper limit value in a range of said pressure detected by said sensor.

3. The pressure sensor apparatus according to claim 2 , wherein an absolute value of said second rate of change is greater than an absolute value of said first rate of change.

4. The pressure sensor apparatus according to claim 3 , wherein said second operation circuit generates said second voltage by amplifying said first voltage.

5. The pressure sensor apparatus according to claim 2 , wherein
said signal processing circuit further includes
a first terminal for outputting said first voltage to the outside of said signal processing circuit, and
a second terminal for outputting said second voltage to the outside of said signal processing circuit.

6. The pressure sensor apparatus according to claim 2 , wherein said range is determined so as to include a standard value of atmospheric pressure and such that said upper limit value is a value in the neighborhood of said standard value.

7. Electronic equipment comprising:
a sensor configured to change a signal voltage based on a pressure;
a signal processing circuit for processing a signal output from said sensor;
said signal processing circuit including
an amplification circuit for amplifying said signal voltage, and
an operation circuit for generating a detection voltage changing in accordance with said pressure, based on an output voltage of said amplification circuit,

wherein said operation circuit is configured to generate said detection voltage by subtracting a voltage having a prescribed correlation with said output voltage of said amplification circuit from a prescribed offset voltage; and
a main unit for executing prescribed processing based on said detection voltage.

Assignees

• Rohm Co Ltd

Inventors

• Yamada Nobuyuki
• Sakuragi Masahiro
• Yoshida Takeshi
• Hayashi Kei

Classifications

• G01L9/008

  using piezoelectric devices (piezoelectric resonators G01L9/0022; surface acoustic waves G01L9/0025) · CPC title

• G01L9/06

  of piezo-resistive devices · CPC title

• Y10T29/49002

  Electrical device making · CPC title

• G01L27/007

  Malfunction diagnosis, i.e. diagnosing a sensor defect · CPC title

• G01L9/0051 Primary

  using variations in ohmic resistance · CPC title