Composite protective layer for photoelectrode structure, photoelectrode structure including the composite protective layer, and photoelectrochemical cell including photoelectrode structure

Patent metadata

Field	Value
Publication number	US-9567680-B2
Application number	US-201314143271-A
Country	US
Kind code	B2
Filing date	Dec 30, 2013
Priority date	Jan 29, 2013
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

A composite protective layer for a photoelectrode, the composite protective layer including a chemical protective layer; and a physical protective layer, wherein the chemical protective layer has corrosion rate of 0.1 Coulombs per square centimeter per 10 hours or less when evaluated at a water decomposition potential, and the physical protective layer has a moisture transmittance rate of 0.001 grams per square meter per day or less and has an electrical conductivity.

First claim

What is claimed is:

1. A composite protective layer for a photoelectrode structure, the composite protective layer comprising:
a chemical protective layer, wherein the chemical protective layer is a metal and comprises at least one metal selected from Group 4, Group 5, Group 11, Group 13, and Group 14 of the Periodic Table of the Elements, and an alloy thereof; and
a physical protective layer, wherein the physical protective layer comprises carbon or a metal comprising at least one selected from at least one metal selected from Group 5, Group 11, and Group 13, an alloy thereof, and stainless steel,
wherein the chemical protective layer has a corrosion rate of 0.1 Coulombs per square centimeter per 10 hours or less when evaluated at a water decomposition potential, and
wherein the physical protective layer has moisture transmittance rate of 0.001 grams per square meter per day or less and has an electrical conductivity,
wherein the chemical protective layer comprises at least one metal selected from tantalum, niobium, titanium, gallium, zirconium, copper, hafnium, aluminum, and indium, and an alloy thereof, and the metal of the physical protective layer comprises at least one selected from copper, stainless steel, tantalum, niobium, and titanium, an alloy thereof, and stainless steel.

2. The composite protective layer for the photoelectrode structure of claim 1 , wherein electrical conductivity of the physical protective layer at room temperature is 1×10 6 Siemens per centimeter or greater.

3. The composite protective layer for the photoelectrode structure of claim 1 , wherein the chemical protective layer comprises a material that is insoluble in water having a pH of about 1 to about 12 at the water decomposition potential.

4. The composite protective layer for the photoelectrode structure of claim 1 , wherein the chemical protective layer comprises at least one selected from tantalum, niobium, and titanium, and an alloy thereof.

5. The composite protective layer for the photoelectrode structure of claim 1 , wherein the carbon comprises at least one selected from amorphous carbon, graphite, and graphene.

6. The composite protective layer for the photoelectrode structure of claim 1 , wherein the physical protective layer is a free standing foil or a free standing film.

7. The composite protective layer for the photoelectrode structure of claim 1 , wherein the protective layer further comprises a native oxide film of the chemical protective layer, and a thickness of the native oxide film is 10 nanometers or less.

8. The composite protective layer for the photoelectrode structure of claim 1 , wherein the composite protective layer comprises a copper foil and a tantalum thin film, or
the composite protective layer further comprises a native oxide film of the chemical protective layer and the composite protective layer comprises a copper foil, a tantalum thin film, and a native oxide film of the tantalum thin film.

9. A photoelectrode structure, comprising:
an electrode;
a light absorbing layer;
a composite protective layer; and

an electrocatalyst,
wherein the composite protective layer comprises:
a chemical protective layer, wherein the chemical protective layer is a metal and comprises at least one metal selected from Group 4, Group 5, Group 11, Group 13, and Group 14 of the Periodic Table of the Elements, and an alloy thereof, and
a physical protective layer, wherein the physical protective layer comprises carbon or a metal comprising at least one selected from at least one metal selected from Group 5 and Group 13, an alloy thereof, and stainless steel,
wherein the chemical protective layer has a corrosion rate of 0.1 Coulombs per square centimeter per 10 hours or less when evaluated at a water decomposition potential, and
wherein the physical protective layer has moisture transmittance rate of 0.001 grams per square meter per day or less and is electrically conductive
wherein the chemical protective layer comprises at least one metal selected from tantalum, niobium, titanium, gallium, zirconium, copper, hafnium, aluminum, and indium, and an alloy thereof, and the metal of the physical protective layer comprises at least one selected from copper, stainless steel, tantalum, niobium, and titanium, an alloy thereof, and stainless steel.

10. The photoelectrode structure of claim 9 , further comprising a bonding layer between the light absorbing layer and the composite protective layer.

11. The photoelectrode structure of claim 10 , further comprising a carrier blocking layer between the light absorbing layer and the bonding layer.

12. The photoelectrode structure of claim 9 , wherein the light absorbing layer is directly on a physical protective layer of the composite protective layer.

13. The photoelectrode structure of claim 9 , wherein the light absorbing layer comprises at least one selected from Cu 2 O, Cu(In,Ga)(S,Se) 2 , Cu(Zn,Sn)(S,Se) 2 , Si, WO 3 , BiVO 4 , CdS, CdSe, CdTe, ZnSe, InGaN, AlGaN, GaAs, GaP, InGaP, and ZnGeP 2 .

14. The photoelectrode structure of claim 9 , further comprising a native oxide film of the chemical protective layer between the composite protective layer and the electrocatalyst, wherein a thickness of the native oxide film is 10 nm or less.

15. The photoelectrode structure of claim 12 , wherein the photoelectrode comprises an electrode/Cu 2 O layer/TiO 2 layer/In layer/Cu foil/Ta thin film/Ta native oxide film/electrocatalyst structure, or
an electrode/n-type silicon/p-type silicon/In layer/Cu foil/Ta thin film/Ta native oxide film/electrocatalyst structure.

16. A photoelectrochemical cell comprising the photoelectrode structure of claim 9 .

17. The photoelectrode structure of claim 9 , wherein an electrical conductivity of the physical protective layer at room temperature is 1×10 6 Siemens per centimeter or greater.

18. The photoelectrode structure of claim 9 , wherein the carbon comprises at least one selected from amorphous carbon, graphite, and graphene.

19. The photoelectrode structure of claim 9 , wherein the composite protective layer comprises a copper foil and a tantalum thin film, or
the composite protective layer further comprises a native oxide film of the chemical protective layer and the composite protective layer comprises a copper foil, a tantalum thin film, and a native oxide film of the tantalum thin film.

20. A photoelectrode structure, comprising:
an electrode;
a light absorbing layer;
a composite protective layer, wherein the composite protective layer comprises a chemical protective layer, wherein the chemical protective layer is a metal and comprises at least one metal selected from Group 4, Group 5, Group 11, Group 13, and Group 14 of the Periodic Table of the Elements, and an alloy thereof;
an electrocatalyst; and
a physical protective layer, wherein the physical protective layer has a thickness of 1 micrometer to 100 micrometers, the physical protective layer comprises carbon or a metal comprising at least one selected from at least one metal selected from Group 5, Group 11, and Group 13, an alloy thereof, and stainless steel, and is electrically conductive, and
wherein the chemical protective layer has a corrosion rate of 0.1 Coulombs per square centimeter per 10 hours or less when evaluated at a water decomposition potential,
wherein the physical protective layer has moisture transmittance rate of 0.001 grams per square meter per day or less,
wherein the chemical protective layer has a thickness of 1/100th to 1/10th of a th

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Tae-Gon
• Lee Jeong-Hee
• Im Seoung-Jae
• Kim Tae-Hyung

Classifications

• Y10T428/12819

  Group VB metal-base component · CPC title

• Y10T428/12611

  Oxide-containing component · CPC title

• C01B3/042 Primary

  Decomposition of water (by electrolysis of water C25B1/04) · CPC title

• C25B1/00

  Electrolytic production of inorganic compounds or non-metals · CPC title

• Y02E60/36

  Hydrogen production from non-carbon containing sources, e.g. by water electrolysis · CPC title