Method for making nano-pillar array on substrate
US-2016139511-A1 · May 19, 2016 · US
US9567257B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9567257-B2 |
| Application number | US-201514967335-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 13, 2015 |
| Priority date | May 21, 2015 |
| Publication date | Feb 14, 2017 |
| Grant date | Feb 14, 2017 |
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The disclosure relates to a method for making a metal nanowire film. The method includes applying a metal layer on a substrate; placing a carbon nanotube composite structure on the metal layer, wherein the carbon nanotube composite structure defines a number of openings and parts of the metal layer are exposed by the number of openings; dry etching the metal layer using the carbon nanotube composite structure as a mask; and removing the carbon nanotube composite structure. The carbon nanotube composite structure includes a carbon nanotube structure and a protective layer coated on the carbon nanotube structure. The carbon nanotube structure includes a number of carbon nanotubes arranged substantially along the same direction.
Opening claim text (preview).
What is claimed is: 1. A method for making a metal nanowire film, the method comprising: providing a substrate having a first surface, and applying a metal layer on the first surface, wherein the metal layer has a metal layer surface spaced from the first surface; providing a carbon nanotube composite structure, wherein the carbon nanotube composite structure defines a plurality of openings and comprises a carbon nanotube structure and a protective layer, coated on the carbon nanotube structure; and the carbon nanotube structure comprises a plurality of carbon nanotubes arranged substantially along the same direction; placing the carbon nanotube composite structure on the metal layer surface, wherein parts of the metal layer are exposed by the plurality of openings; dry etching the metal layer using the carbon nanotube composite structure as a mask; and removing the carbon nanotube composite structure. 2. The method of claim 1 , wherein the carbon nanotube structure comprises a first carbon nanotube film and a second carbon nanotube film stacked with each other. 3. The method of claim 2 , wherein the first carbon nanotube film comprises a plurality of first carbon nanotubes that are joined end-to-end by van der Waals attractive force therebetween and substantially arranged along the same first direction; the second carbon nanotube film comprises a plurality of second carbon nanotubes that are joined end-to-end by van der Waals attractive force therebetween and substantially arranged along the same second direction; and the second direction is different from the first direction. 4. The method of claim 1 , wherein the carbon nanotube structure comprises a plurality of carbon nanotube wires parallel with and spaced from each other. 5. The method of claim 1 , wherein the providing the carbon nanotube composite structure comprises suspending the carbon nanotube structure and applying the protective layer on the carbon nanotube structure. 6. The method of claim 5 , wherein each of the plurality of carbon nanotubes is fully enclosed by the protective layer. 7. The method of claim 5 , wherein the providing the carbon nanotube composite structure further comprises scanning the carbon nanotube structure along a length direction of the plurality of carbon nanotubes by a laser. 8. The method of claim 7 , wherein a power density of the laser is greater than 0.053×10 12 watts per square meter; the laser is focused on the carbon nanotube structure to form a laser spot, a diameter of the laser spot is in a range from about 10 micrometers to about 100 micrometers. 9. The method of claim 1 , wherein a thickness of the protective layer is in a range from about 3 nanometers to about 50 nanometers. 10. The method of claim 9 , wherein the thickness of the protective layer is in a range from about 3 nanometers to about 20 nanometers. 11. The method of claim 1 , wherein the protective layer comprises a material selected from the group consisting of metal, metal oxide, metal nitride, metal carbide, metal sulfide, silicon oxide, silicon nitride, and silicon carbide. 12. The method of claim 1 , wherein the dry etching is plasma etching or reactive ion etching. 13. The method of claim 1 , wherein the removing the carbon nanotube composite structure comprises ultrasonic treating, adhesive tape peeling, or oxidation. 14. The method of claim 1 , wherein the substrate comprises material selected from the group consisting of silicon wafer, ceramic, glass, quartz, diamond, metal oxide, and polymer. 15. The method of claim 1 , wherein a material of the metal layer is elected from the group consisting of gold, silver, copper, iron, aluminum, nickel or chromium.
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