Method for making metal nanowires film

US9567257B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9567257-B2
Application numberUS-201514967335-A
CountryUS
Kind codeB2
Filing dateDec 13, 2015
Priority dateMay 21, 2015
Publication dateFeb 14, 2017
Grant dateFeb 14, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The disclosure relates to a method for making a metal nanowire film. The method includes applying a metal layer on a substrate; placing a carbon nanotube composite structure on the metal layer, wherein the carbon nanotube composite structure defines a number of openings and parts of the metal layer are exposed by the number of openings; dry etching the metal layer using the carbon nanotube composite structure as a mask; and removing the carbon nanotube composite structure. The carbon nanotube composite structure includes a carbon nanotube structure and a protective layer coated on the carbon nanotube structure. The carbon nanotube structure includes a number of carbon nanotubes arranged substantially along the same direction.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for making a metal nanowire film, the method comprising: providing a substrate having a first surface, and applying a metal layer on the first surface, wherein the metal layer has a metal layer surface spaced from the first surface; providing a carbon nanotube composite structure, wherein the carbon nanotube composite structure defines a plurality of openings and comprises a carbon nanotube structure and a protective layer, coated on the carbon nanotube structure; and the carbon nanotube structure comprises a plurality of carbon nanotubes arranged substantially along the same direction; placing the carbon nanotube composite structure on the metal layer surface, wherein parts of the metal layer are exposed by the plurality of openings; dry etching the metal layer using the carbon nanotube composite structure as a mask; and removing the carbon nanotube composite structure. 2. The method of claim 1 , wherein the carbon nanotube structure comprises a first carbon nanotube film and a second carbon nanotube film stacked with each other. 3. The method of claim 2 , wherein the first carbon nanotube film comprises a plurality of first carbon nanotubes that are joined end-to-end by van der Waals attractive force therebetween and substantially arranged along the same first direction; the second carbon nanotube film comprises a plurality of second carbon nanotubes that are joined end-to-end by van der Waals attractive force therebetween and substantially arranged along the same second direction; and the second direction is different from the first direction. 4. The method of claim 1 , wherein the carbon nanotube structure comprises a plurality of carbon nanotube wires parallel with and spaced from each other. 5. The method of claim 1 , wherein the providing the carbon nanotube composite structure comprises suspending the carbon nanotube structure and applying the protective layer on the carbon nanotube structure. 6. The method of claim 5 , wherein each of the plurality of carbon nanotubes is fully enclosed by the protective layer. 7. The method of claim 5 , wherein the providing the carbon nanotube composite structure further comprises scanning the carbon nanotube structure along a length direction of the plurality of carbon nanotubes by a laser. 8. The method of claim 7 , wherein a power density of the laser is greater than 0.053×10 12 watts per square meter; the laser is focused on the carbon nanotube structure to form a laser spot, a diameter of the laser spot is in a range from about 10 micrometers to about 100 micrometers. 9. The method of claim 1 , wherein a thickness of the protective layer is in a range from about 3 nanometers to about 50 nanometers. 10. The method of claim 9 , wherein the thickness of the protective layer is in a range from about 3 nanometers to about 20 nanometers. 11. The method of claim 1 , wherein the protective layer comprises a material selected from the group consisting of metal, metal oxide, metal nitride, metal carbide, metal sulfide, silicon oxide, silicon nitride, and silicon carbide. 12. The method of claim 1 , wherein the dry etching is plasma etching or reactive ion etching. 13. The method of claim 1 , wherein the removing the carbon nanotube composite structure comprises ultrasonic treating, adhesive tape peeling, or oxidation. 14. The method of claim 1 , wherein the substrate comprises material selected from the group consisting of silicon wafer, ceramic, glass, quartz, diamond, metal oxide, and polymer. 15. The method of claim 1 , wherein a material of the metal layer is elected from the group consisting of gold, silver, copper, iron, aluminum, nickel or chromium.

Assignees

Inventors

Classifications

  • Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

  • using sets of wires, e.g. crossed wires · CPC title

  • Optical details, e.g. printed circuits comprising integral optical means (H05K1/0269 takes precedence; coupling light guides with opto-electronic components G02B6/42) · CPC title

  • by etching · CPC title

  • Carbon · CPC title

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What does patent US9567257B2 cover?
The disclosure relates to a method for making a metal nanowire film. The method includes applying a metal layer on a substrate; placing a carbon nanotube composite structure on the metal layer, wherein the carbon nanotube composite structure defines a number of openings and parts of the metal layer are exposed by the number of openings; dry etching the metal layer using the carbon nanotube comp…
Who is the assignee on this patent?
Univ Tsinghua, Hon Hai Prec Ind Co Ltd
What technology area does this patent fall under?
Primary CPC classification C03C17/09. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Feb 14 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).