Semiconductor device and method of manufacturing same
US-9362534-B2 · Jun 7, 2016 · US
US9564609B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9564609-B2 |
| Application number | US-201213369797-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 9, 2012 |
| Priority date | Feb 11, 2011 |
| Publication date | Feb 7, 2017 |
| Grant date | Feb 7, 2017 |
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Official abstract text for this publication.
A light-emitting element disclosed includes a first electrode layer; a second electrode layer which transmits light; and a light-emitting layer interposed between the first electrode layer and the second electrode layer. The first electrode layer includes a first conductive layer which is able to reflect light, a second conductive layer provided over the first conductive layer and including titanium, and a third conductive layer which transmits light and contains a metal oxide having work function higher than that of a material of the first conductive layer.
Opening claim text (preview).
What is claimed is: 1. A light-emitting element comprising: a first electrode on a first insulating layer, the first electrode comprising a first conductive layer, a second conductive layer over and directly in contact with the first conductive layer, and a third conductive layer over and directly in contact with the second conductive layer; a second insulating layer over and in contact with the third conductive layer, the second insulating layer comprising an opening portion wh…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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