Improving display contrast

Patent metadata

Field	Value
Publication number	US-9564563-B2
Application number	US-201213261922-A
Country	US
Kind code	B2
Filing date	Dec 19, 2012
Priority date	Dec 20, 2011
Publication date	Feb 7, 2017
Grant date	Feb 7, 2017

Abstract

There is herein described electronic components with improved display contrast and a method of manufacturing such electronic components. More particularly, there is described electronic components having improved display contrast by using a non-transparent or substantially non-transparent material ( 520 ) to block light from an emitter source ( 512, 514, 516 ) to surrounding components such as emitters, sensors or components of this nature.

First claim

The invention claimed is:

1. An LED array, comprising:
at least two raised mesa areas;
located between the at least two raised mesa areas there is a trench;
on the upper surface of the at least two raised mesa areas there are pixels and N-bus formations along with an annealed metal area and a p-metal layer;
wherein the trench is at least partially filled with a non-transparent or substantially non-transparent material capable of blocking light emitted from within the LED; and
wherein the non-transparent or substantially non-transparent material is selected from any suitable polymeric material such as any one of or any combination of the following: polyimide; epoxy; and benzocyclobutene.

2. An LED array according to claim 1 , wherein the LED array is a micro-LED array.

3. An LED array according to claim 1 , wherein the non-transparent or substantially non-transparent material is used to reduce unwanted crosstalk and thereby provide improved display contrast for LED and micro-LED arrays.

4. An LED array according to claim 1 , wherein the non-transparent or substantially non-transparent material therefore fills the trench in-between adjacent pixels.

5. An LED array according to claim 1 , wherein sufficient material should be introduced so that redirected light should be absorbed and preventing from being emitted from the upper surface.

6. An LED array according to claim 1 , wherein the non-transparent or substantially non-transparent material fully occupies the trench or simply forms a layer.

7. An LED array according to claim 1 , wherein the non-transparent or substantially non-transparent material functions as an interlayer dielectric.

8. An LED array according to claim 1 , wherein the non-transparent or substantially non-transparent material is selected from any appropriate material that is capable of blocking light.

9. An LED array according to claim 1 , wherein there is a combination of different polymers forming a light blocking layer; and wherein there is a combination of polymer and other dielectric layers comprising at least one of a silicon nitride and silicon dioxide.

10. An LED array according to claim 1 , wherein the non-transparent or substantially non-transparent material forms a layer which is non-transparent or substantially non-transparent to light at the emission wavelength of the LED array.

11. An LED array according to claim 1 , wherein the non-transparent or substantially non-transparent material in polymeric form allows metals such as deposited p-metal layer to be conformably deposited thereby further reducing the light scattering from the trench; and wherein the polymeric material also provides optical and electrical isolation between emitters or between an emitter and any adjacent structure.

12. An LED array according to claim 1 , wherein the deposited non-transparent or substantially non-transparent material also functions to effectively isolate each pixel and p-contact from n-contacts, thereby eliminating the undesirable electric crosstalk and improving the device reliability.

13. An LED array, comprising:
at least two raised mesa areas;
located between the at least two raised mesa areas there is a trench;
on the upper surface of the at least two raised mesa areas there are pixels and N-bus formations along with an annealed metal area and a p-metal layer;
wherein the trench is at least partially filled with a non-transparent or substantially non-transparent material capable of blocking light emitted from within the LED;
wherein there is a combination of different polymers forming a light blocking layer; and
wherein there is a combination of polymer and other dielectric layers comprising at least one of a silicon nitride and silicon dioxide.

14. An LED array according to claim 13 , wherein the LED array is a micro-LED array.

15. An LED array according to claim 13 , wherein the non-transparent or substantially non-transparent material functions as an interlayer dielectric.

16. An LED array, comprising:
at least two raised mesa areas;
located between the at least two raised mesa areas there is a trench;
on the upper surface of the at least two raised mesa areas there are pixels and N-bus formations along with an annealed metal area and a p-metal layer;
wherein the trench is at least partially filled with a non-transparent or substantially non-transparent material capable of blocking light emitted from within the LED; and
wherein the non-transparent or substantially non-transparent material forms a layer which is non-transparent or substantially non-transparent to light at the emission wavelength of the LED array.

17. An LED array according to claim 16 , wherein the LED array is a micro-LED array.

18. An LED array according to claim 16 , wherein the non-transparent or substantially non-transparent material functions as an interlayer dielectric.

19. An LED array, comprising:
at least two raised mesa areas;
located between the at least two raised mesa areas there is a trench;
on the upper surface of the at least two raised mesa areas there are pixels and N-bus formations along with an annealed metal area and a p-metal layer;
wherein the trench is at least partially filled with a non-transparent or substantially non-transparent material capable of blocking light emitted from within the LED;
wherein the non-transparent or substantially non-transparent material in polymeric form allows metals such as deposited p-metal layer to be conformably deposited thereby further reducing the light scattering from the trench; and
wherein the polymeric material also provides optical and electrical isolation between emitters or between an emitter and any adjacent structure.

20. An LED array according to claim 19 , wherein the LED array is a micro-LED array.

21. An LED array according to claim 19 , wherein the non-transparent or substantially non-transparent material functions as an interlayer dielectric.

22. An LED array, comprising:
at least two raised mesa areas;
located between the at least two raised mesa areas there is a trench;
on the upper surface of the at least two raised mesa areas there are pixels and N-bus formations along with an annealed metal area and a p-metal layer;
wherein the trench is at least partially filled with a non-transparent or substantially non-transparent material capable of blocking light emitted from within the LED; and
wherein the deposited non-transparent or substantially non-transparent material also functions to effectively isolate each pixel and p-contact from n-contacts, thereby eliminating the undesirable electric crosstalk and improving the device reliability.

23. An LED array according to claim 22 , wherein the LED array is a micro-LED array.

24. An LED array according to claim 22 , wherein the non-transparent or substantially non-transparent material functions as an interlayer dielectric.

Assignees

• Oculus Vr Llc

Inventors

• Gong Zheng
• Small James
• Bonar James Ronald

Classifications

• G02B5/003

  Light absorbing elements · CPC title

• H01L27/156

  Electricity · mapped topic

• H01L33/58 Primary

  Electricity · mapped topic

• H01L33/56

  Electricity · mapped topic

• H01L27/15

  Electricity · mapped topic