Diode with insulated anode regions

Patent metadata

Field	Value
Publication number	US-9564541-B2
Application number	US-201514943794-A
Country	US
Kind code	B2
Filing date	Nov 17, 2015
Priority date	Mar 28, 2014
Publication date	Feb 7, 2017
Grant date	Feb 7, 2017

Abstract

A diode is integrated on a semiconductor chip having anode and cathode surfaces opposite to each other. The diode comprises a cathode region extending inwardly from the cathode surface, a drift region extending between the anode surface and the cathode region, and a plurality of anode regions extending from the anode surface in the drift region. The diode further comprises a cathode electrode coupled with the cathode region, and an anode electrode that contacts one or more contacted anode regions of said anode regions and is electrically insulated from one or more floating anode regions of the anode regions. The diode is configured so that charge carriers are injected from the floating anode regions into the drift region in response to applying of a control voltage exceeding a threshold voltage.

First claim

The invention claimed is:

1. A diode integrated on a chip of semiconductor material having an anode surface and a cathode surface opposite to each other, the diode comprising:
a cathode region having a doping of a first type, the cathode region extending from the cathode surface in the chip,
a drift region having a doping of the first type with a dopant concentration lower than a dopant concentration of the cathode region, the drift region extending between the anode surface and the cathode region,
a plurality of anode regions having a doping of a second type, each anode region extending from the anode surface in the drift region,
a cathode electrode of electrically conductive material on the cathode surface and electrically coupled with said cathode region, and
an anode electrode of electrically conducting material, wherein:
the anode regions are positioned between the anode electrode and the cathode electrode;
one or more contacted anode regions of said anode regions are electrically coupled with the anode electrode on the anode surface;
one or more floating anode regions of said anode regions are electrically insulated from the anode electrode;
the one or more floating anode regions are configured so that charge carriers are injected from said one or more floating anode regions into the drift region in response to a control voltage, applied between the anode electrode and the cathode electrode, exceeding a threshold voltage of the diode;
the anode regions are arranged in a matrix on the anode surface; and
the floating anode regions are organized into sets each of one or more floating anode regions, each set of floating anode regions being positioned at the anode surface between a respective pair of the contacted anode regions, and each set of one or more floating anode regions being separated from the respective pair of the contacted anode region by portions of the drift region.

2. The diode according to claim 1 , wherein the drift region comprises a plurality of charge recombination centers adapted to recombine free charge carriers.

3. The diode according to claim 1 , comprising an insulating layer covering the one or more floating anode regions and covering portions of the anode surface between the anode regions.

4. The diode according to claim 3 , wherein the insulating layer includes one or more openings directly above the one or more contacted anode regions, respectively, and the anode electrode includes a covering portion that covers the insulating layer and one or more contact portions extending respectively in the one or more openings and contacting the one or more contacted anode regions, respectively.

5. The diode according to claim 4 , wherein the insulating layer contacts all of the anode surface between consecutive ones of the one or more contacted anode regions.

6. The diode according to claim 1 , wherein the floating anode regions are organized into sets each of one or more floating anode regions, each set of floating anode regions being surrounded along a plurality of directions at the anode surface by a plurality of the contacted anode regions.

7. The diode according to claim 1 , in which the contacted anode regions and the floating anode regions are arranged at the anode surface along corresponding alignments parallel to each other, the alignments of the floating anode regions being arranged in sets each of one or more alignments, each set of alignments of the floating anode regions at the anode surface being positioned between each pair of adjacent alignments of the contacted anode regions.

8. An electronic device comprising:
a power transistor integrated on a chip of semiconductor material having an anode surface and a cathode surface opposite to each other; and
a diode operatively coupled with the power transistor, the diode including:
a cathode region having a doping of a first type, the cathode region extending from the cathode surface in the chip,
a drift region having a doping of the first type with a dopant concentration lower than a dopant concentration of the cathode region, the drift region extending between the anode surface and the cathode region,
a plurality of anode regions having a doping of a second type, each anode region extending from the anode surface in the drift region,
a cathode electrode of electrically conductive material on the cathode surface and electrically coupled with said cathode region, and
an anode electrode of electrically conducting material, wherein:
the anode regions are positioned between the anode electrode and the cathode electrode;
one or more contacted anode regions of said anode regions are electrically coupled with the anode electrode on the anode surface, and one or more floating anode regions of said anode regions are electrically insulated from the anode electrode,
the one or more floating anode regions are configured so that charge carriers are injected from said one or more floating anode regions into the drift region in response to a control voltage, applied between the anode electrode and the cathode electrode, exceeding a threshold voltage of the diode, wherein the anode regions are arranged in a matrix at the anode surface, and
the one or more floating anode regions are organized into sets each of one or more floating anode regions, each set of one or more floating anode regions being positioned at the anode surface between a respective pair of the contacted anode regions, and each set of one or more floating anode regions being separated from the respective pair of the contacted anode region by portions of the drift region.

9. The electronic device according to claim 8 , wherein the diode includes an insulating layer covering the one or more floating anode regions and covering portions of the anode surface between the anode regions.

10. The electronic device according to claim 9 , wherein the insulating layer includes one or more openings directly above the one or more contacted anode regions, respectively, and the anode electrode includes a covering portion that covers the insulating layer and one or more contact portions extending respectively in the one or more openings and contacting the one or more contacted anode regions, respectively.

11. The electronic device according to claim 10 , wherein the insulating layer contacts all of the anode surface between consecutive ones of the one or more contacted anode regions.

12. The electronic device according to claim 8 , wherein the floating anode regions are organized into sets each of one or more floating anode regions, each set of one or more floating anode regions being surrounded along a plurality of directions at the anode surface by a plurality of the contacted anode regions.

13. The electronic device according to claim 8 , in which the contacted anode regions and the floating anode regions are arranged at the anode surface along corresponding alignments parallel to each other, the alignments of the floating anode regions being arranged in sets each of one or more alignments, each set of alignments of the floating anode regions at the anode surface being positioned between each pair of adjacent alignments of the contacted anode regions.

14. The electronic device according to claim 8 , wherein the electronic device is a power apparatus configured to supply power to a load.

15. A method, comprising:
integrating a diode in a chip of semiconductor material having an anode surface and a cathode surface opposite to each other, the integrating including:
forming a cathode region having a doping of a first type, the cathode region extending from the cathode surface in the chip

Assignees

• St Microelectronics Srl

Inventors

• Alessandria Antonino
• Fragapane Leonardo

Classifications

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H10D62/128

  Anode regions of diodes · CPC title

• H01L27/0814

  Electricity · mapped topic

• H01L29/0692

  Electricity · mapped topic

• H01L29/868 Primary

  Electricity · mapped topic