Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors

Patent metadata

Field	Value
Publication number	US-9564531-B2
Application number	US-201113064366-A
Country	US
Kind code	B2
Filing date	Mar 22, 2011
Priority date	Mar 22, 2010
Publication date	Feb 7, 2017
Grant date	Feb 7, 2017

Abstract

Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

First claim

What is claimed is:

1. A thin film transistor comprising:
a semiconductor channel disposed between a drain electrode and a source electrode; and
a gate insulating layer disposed between the semiconductor channel and a gate electrode,
wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, the second metal oxide not being identical to the first metal oxide,
at least a portion of the gate insulating layer that includes the second metal oxide is in direct contact with the semiconductor channel,
the first metal oxide and the second metal oxide commonly include at least one of indium tin oxide (ITO), zinc tin oxide (ZTO), and indium zinc tin oxide (IZTO), and
at least one of the first metal oxide and the second metal oxide includes one of cerium (Ce), hafnium (Hf), tantalum (Ta), lanthanum (La), niobium (Nb), yttrium (Y) and combinations thereof.

2. The thin film transistor of claim 1 , wherein the first metal oxide and the second metal oxide commonly include at least one metal selected from zinc, indium, and tin included in the at least one of indium tin oxide (ITO), zinc tin oxide (ZTO), and indium zinc tin oxide (IZTO), and
the first metal oxide includes a different amount of the at least one metal than the second metal oxide.

3. The thin film transistor of claim 2 , wherein an amount of the at least one metal in the first metal oxide is less than an amount of the at least one metal in the second metal oxide.

4. The thin film transistor of claim 1 , further comprising:
an auxiliary layer including an inorganic material and disposed between the gate electrode and the gate insulating layer, wherein the gate electrode is placed on a substrate.

5. The thin film transistor of claim 1 , further comprising:
an etch stop layer disposed on the semiconductor channel.

6. The thin film transistor of claim 1 , further comprising:
an etch stop layer disposed on the semiconductor channel, wherein the gate electrode is placed on a substrate.

7. The thin film transistor of claim 1 , wherein the drain electrode and the source electrode are disposed on a substrate.

8. The thin film transistor of claim 1 , wherein at least one of the first metal oxide and the second metal oxide is heat-treated.

9. A thin film transistor comprising:
a semiconductor channel between a drain electrode and a source electrode; and
a gate insulating layer between the semiconductor channel and a gate electrode,
wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, the second metal oxide not being identical to the first metal oxide,
at least a portion of the gate insulating layer that includes the second metal oxide is in direct contact with the semiconductor channel,
the first metal oxide and the second metal oxide commonly include indium zinc oxide (IZO),
the first metal oxide includes one of cerium indium zinc oxide (Ce-IZO) and hafnium indium zinc oxide (Hf-IZO),
the cerium (Ce) is included in the content of more than about 0 and less than about 50 atomic parts based on 100 atomic parts of the zinc, and
the hafnium (Hf) is included in the content of more than about 0 and less than about 80 atomic parts based on 100 atomic parts of the zinc.

10. A thin film transistor comprising:
a semiconductor channel between a drain electrode and a source electrode; and
a gate insulating layer between the semiconductor channel and a gate electrode,
wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, the second metal oxide not being identical to the first metal oxide,
at least a portion of the gate insulating layer that includes the second metal oxide is in direct contact with the semiconductor channel,
the first metal oxide and the second metal oxide commonly include indium zinc oxide (IZO),
the second metal oxide includes one selected from cerium indium zinc oxide (Ce-IZO) and hafnium indium zinc oxide (Hf-IZO),
the cerium (Ce) is included in the content of more than about 50 atomic parts based on 100 atomic parts of the zinc, and
the hafnium (Hf) is included in the content of more than about 80 atomic parts based on 100 atomic parts of the zinc.

Assignees

• Park Kyung-Bae
• Ryu Myung-Kwan
• Seon Jong-Baek
• Lee Sang-Yoon
• Koo Bon-Won
• Samsung Electronics Co Ltd

Inventors

• Park Kyung-Bae
• Ryu Myung-Kwan
• Seon Jong-Baek
• Lee Sang-Yoon
• Koo Bon-Won

Classifications

• H01L29/4908

  Electricity · mapped topic

• H01L29/7869 Primary

  Electricity · mapped topic

• H10D30/6739

  Conductor-insulator-semiconductor electrodes · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title