Method for preparing a silicon dioxide substrate-based graphene transparent conductive film

Patent metadata

Field	Value
Publication number	US-9564260-B2
Application number	US-201414445589-A
Country	US
Kind code	B2
Filing date	Jul 29, 2014
Priority date	Feb 17, 2014
Publication date	Feb 7, 2017
Grant date	Feb 7, 2017

Abstract

The present invention provides a method for preparing a silicon dioxide substrate-based graphene transparent conductive film, which comprises: preparing a silicon dioxide substrate on a graphene transparent conductive film, thereby obtaining a silicon dioxide substrate-based graphene transparent conductive film. In the method for preparing a silicon dioxide substrate-based graphene transparent conductive film according to the embodiments of the present invention, the silicon dioxide substrate is prepared on the graphene transparent conductive film, and a graphene transferring step that is difficult to implement in the prior art can be avoided, thus the silicon dioxide substrate-based graphene transparent conductive film can be prepared conveniently, and the cost may be reduced at the same time.

First claim

What is claimed is:

1. A method for preparing a silicon dioxide substrate-based graphene transparent conductive film, which prepares a silicon dioxide substrate on a graphene transparent conductive film, and thereby obtains the silicon dioxide substrate-based graphene transparent conductive film,
wherein the preparing step comprises:
(1) a graphene transparent conductive film preparation step of preparing the graphene transparent conductive film on a metal substrate to form a first substrate;
(2) a silicon dioxide substrate preparation step of preparing the silicon dioxide substrate on the graphene transparent conductive film so as to obtain a laminated structure that consists of the metal substrate, the graphene transparent conductive film, and the silicon dioxide substrate which are sequentially arranged; and
(3) an etching step of etching off the metal substrate, thereby obtaining the silicon dioxide substrate-based graphene transparent conductive film.

2. The method according to claim 1 , wherein the silicon dioxide substrate preparation step comprises:
a silicon dioxide sol layer forming step of forming a silicon dioxide sol layer on a surface of the graphene transparent conductive film; and
a drying step of drying the first substrate, on a surface of which the silicon dioxide sol layer is formed, to prepare the silicon dioxide substrate on the graphene transparent conductive film.

3. The method according to claim 2 , wherein the silicon dioxide sol layer forming step further comprises:
preparing silicon dioxide sol on the surface of the graphene transparent conductive film via spin coating to form the silicon dioxide sol layer, wherein the spinning speed of the spin coating is 100 revolutions/minute to 900 revolutions/minute.

4. The method according to claim 2 , wherein the silicon dioxide sol layer forming step further comprises:
preparing silicon dioxide sol on the surface of the graphene transparent conductive film via blade coating to form the silicon dioxide sol layer, wherein the speed of the blade coating is 0.1 cm/second to 1 cm/second.

5. The method according to claim 2 , wherein the silicon dioxide sol layer forming step further comprises:
preparing silicon dioxide sol on the surface of the graphene transparent conductive film via infiltration to form the silicon dioxide sol layer, wherein the infiltration time is 10 minutes to 60 minutes.

6. The method according to claim 2 , wherein the thickness of the silicon dioxide sol layer formed on the surface of the graphene transparent conductive film is 1 micron to 30 microns.

7. The method according to claim 3 , wherein the thickness of the silicon dioxide sol layer formed on the surface of the graphene transparent conductive film is 1 micron to 30 microns.

8. The method according to claim 4 , wherein the thickness of the silicon dioxide sol layer formed on the surface of the graphene transparent conductive film is 1 micron to 30 microns.

9. The method according to claim 5 , wherein the thickness of the silicon dioxide sol layer formed on the surface of the graphene transparent conductive film is 1 micron to 30 microns.

10. The method according to claim 2 , wherein in the silicon dioxide sol layer forming step, the rotational viscosity of silicon dioxide sol is greater than or equal to 8 MPa·s and less than or equal to 15 MPa·s.

11. The method according to claim 2 , wherein in the silicon dioxide sol layer forming step, the concentration of silicon dioxide sol is greater than or equal to 35% and less than or equal to 55%.

12. The method according to claim 2 , wherein the silicon dioxide sol layer forming step further comprises a silicon dioxide sol forming step of mixing tetraethylorthosilicate, water, ethanol and ammonia water and stirring at a temperature of 20° C. to 40° C. so as to form silicon dioxide sol, wherein the mole number of tetraethylorthosilicate is greater than or equal to 0.5 and less than or equal to 2, and the mole number of ethanol is greater than or equal to 2 and less than or equal to 12.

13. The method according to claim 1 , wherein the metal substrate is a copper foil substrate.

14. The method according to claim 1 , wherein in the graphene transparent conductive film preparation step, hydrocarbon is used as a carbon source and chemical vapor deposition is employed as a carbon forming method.

15. The method according to claim 14 , wherein the temperature required for the chemical vapor deposition is between 800° C. and 1200° C.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Shi Yue

Classifications

• C23C16/26 Primary

  Deposition of carbon only · CPC title

• H01B1/04

  mainly consisting of carbon-silicon compounds, carbon or silicon · CPC title

• H01B13/0026 Primary

  Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal · CPC title

• H01B13/30

  Drying; Impregnating (H01B13/32 takes precedence) · CPC title

• C23F1/00

  Etching metallic material by chemical means (manufacture of printing surfaces B41C; manufacture of printed circuits H05K) · CPC title