Carbon electrode with slidable contact surfaces and apparatus for manufacturing polycrystalline silicon rod

Patent metadata

Field	Value
Publication number	US-9562289-B2
Application number	US-201013508826-A
Country	US
Kind code	B2
Filing date	Oct 22, 2010
Priority date	Nov 26, 2009
Publication date	Feb 7, 2017
Grant date	Feb 7, 2017

Abstract

The upper electrode 31 has a hole 35 extending from an upper surface 33 to a lower surface 34 , a bolt 36 is inserted from the upper surface 33 of the upper electrode 31 into the hole 35 , and secured in a lower electrode 32 by a screw. A gap 51 between an inside of the hole 35 and a straight body portion of the bolt 36 allows the upper electrode 31 to slide in all directions in a placement surface (upper surface of the lower electrode 32 in contact with the lower surface 34 of the upper electrode 31 in FIG. 2 ) that is a contact surface with an upper surface of the lower electrode 32 , thereby providing an effect of preventing occurrence of a crack or a break in a U rod that can be expanded and contracted in all directions during a vapor phase growth process.

First claim

The invention claimed is:

1. A carbon electrode comprising:
a lower electrode secured on a metal electrode that is an external electrode for electrifying a silicon core; and
an upper electrode located on the lower electrode, the upper electrode comprising an upper surface side, a lower surface side, and a securing portion of a core holder that holds the silicon core on the upper surface side,
wherein the upper electrode is slidable in all directions when the entirety of the lower surface side is in contact with an upper surface of the lower electrode, and
wherein the upper electrode comprises a hole extending from the upper surface side to the lower surface side, a lower end of a rod-shaped fastening member inserted into the hole is secured to the lower electrode, a diameter of the hole is larger than a diameter of a straight body portion of the rod-shaped fastening member, a gap is located between an inside of the hole and the straight body portion, and the upper electrode is slidable in all directions by an amount up to a width of the gap.

2. The carbon electrode according to claim 1 , wherein the diameter of the hole is at least 1 mm larger than the diameter of the straight body portion.

3. The carbon electrode according to claim 1 , wherein the upper electrode and the lower electrode comprise graphite.

4. The carbon electrode according to claim 1 , wherein a coefficient of static friction of the contact surface between the upper electrode and the lower electrode is 0.3 or less.

5. An apparatus comprising a pair of metal electrodes, wherein electric power is supplied from the pair of metal electrodes to opposite ends of a silicon core assembled into an inverted U-shape to grow polycrystalline silicon from vapor phase on the silicon core,
wherein both opposite ends of the silicon core assembled into the inverted U-shape are respectively held by securing portions provided in carbon electrodes, and at least one of the carbon electrodes is the carbon electrode according to claim 1 .

6. The carbon electrode according to claim 2 , wherein:
the upper electrode and the lower electrode comprise graphite; and
a coefficient of static friction of the contact surface between the upper electrode and the lower electrode is 0.3 or less.

Assignees

• Netsu Shigeyoshi
• Kurotani Shinichi
• Oguro Kyoji
• Kume Fumitaka
• Hirahara Masaru
• Shinetsu Chemical Co

Inventors

• Netsu Shigeyoshi
• Kurotani Shinichi
• Oguro Kyoji
• Kume Fumitaka
• Hirahara Masaru

Classifications

• C23C16/458 Primary

  characterised by the method used for supporting substrates in the reaction chamber · CPC title

• C23C16/24

  Deposition of silicon only · CPC title

• C01B33/035

  by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process · CPC title

• C01B32/225

  Expansion; Exfoliation · CPC title

• C01B31/0423

  Chemistry & Metallurgy · mapped topic