Enhanced light extraction

Patent metadata

Field	Value
Publication number	US-9559250-B2
Application number	US-201314377804-A
Country	US
Kind code	B2
Filing date	Feb 11, 2013
Priority date	Feb 9, 2012
Publication date	Jan 31, 2017
Grant date	Jan 31, 2017

Abstract

There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs.

First claim

The invention claimed is:

1. A method of manufacturing a light emitting structure comprising:
providing a transparent conductive oxide (TCO) layer; a GaN layer and a sapphire layer;
providing a photoresist pattern in the areas to be defined as emitters by photolithography;
baking the photoresist pattern to allow it to reflow into a rounded form;
transferring the photoresist pattern by a dry etch technique, said techniques comprising inductively coupled plasma etch (ICP) or Reactive Ion Etching (RIE), into the TCO layer and then into the GaN layer; and
covering the light emitting structure with a thin insulating layer, said thin insulating layer comprising silicon dioxide or silicon nitride; wherein the light emitting structure is capable of emitting electromagnetic radiation and further wherein the TCO layer is located adjacent the light emitting structure through which electromagnetic radiation may be transmitted, wherein the TCO layer improves the amount of light capable of being extracted from the light emitting structure.

2. The method according to claim 1 wherein the sapphire layer is textured to enhance light extraction.

3. The method according to claim 1 wherein the sapphire layer or insulating layer is removed to enhance light extraction and further comprising the steps of: removing the sapphire layer to enhance light extraction; and
patterning the GaN surface to form a structure such as a refractive, diffractive, Fresnel or 2D photonic crystal structure.

4. The method according to claim 1 , wherein the refractive index of the integrated transparent conductive contact layer is closely matched to the GaN layer; and wherein the light emitting structure is an LED.

5. The method of claim 1 , further comprising the step of removing the sapphire layer or insulating layer to enhance light extraction.

Assignees

• Oculus Vr Llc

Inventors

• Bonar James Ronald
• Gong Zheng
• Small James
• Valentine Gareth John
• Laming Richard I

Classifications

• H10W90/00

  Package configurations · CPC title

• H01L2933/0058

  Electricity · mapped topic

• H01L2924/00

  Electricity · mapped topic

• H01L2924/0002

  Electricity · mapped topic

• H01L33/38

  Electricity · mapped topic