Method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9558967-B2
Application number	US-201514928780-A
Country	US
Kind code	B2
Filing date	Oct 30, 2015
Priority date	Jan 5, 2015
Publication date	Jan 31, 2017
Grant date	Jan 31, 2017

Abstract

An improvement is achieved in the reliability of a semiconductor device by preventing a dielectric breakdown between two semiconductor chips facing each other. During the manufacturing of first and second semiconductor chips, the process of planarizing the upper surfaces of insulating films is performed. Then, the first and second semiconductor chips are stacked via an insulating sheet with the respective insulating films of the first and second semiconductor chips facing each other such that the respective coils of the first and second semiconductor chips are magnetically coupled to each other.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device including a first semiconductor chip having a first coil, a second semiconductor chip having a second coil, and an insulating sheet interposed between the first and second semiconductor chips, the first and second semiconductor chips being stacked via the insulating sheet, and the first and second coils being magnetically coupled to each other, the method comprising the steps of:
(a) providing the first semiconductor chip;
(b) providing the second semiconductor chip; and
(c) stacking the first and second semiconductor chips via the insulating sheet so as to magnetically couple the first and second coils to each other;
wherein the step (a) includes the steps of:
(a1) forming a first wiring structure having one or more wiring layers and including the first coil over a first semiconductor substrate;
(a2) forming a first insulating film over the first wiring structure; and
(a3) planarizing an upper surface of the first insulating film,
wherein the step (b) includes the steps of:
(b1) forming a second wiring structure having one or more wiring layers and including the second coil over a second semiconductor substrate;
(b2) forming a second insulating film over the second wiring structure; and
(b3) planarizing an upper surface of the second insulating film, and
wherein, in the step (c), the first and second semiconductor chips are stacked via the insulating sheet with the first insulating film of the first semiconductor chip and the second insulating film of the second semiconductor chip facing each other.

2. The method of manufacturing the semiconductor device according to claim 1 ,
wherein the step (a3) includes the steps of:
(a4) forming a first mask layer over the first insulating film; and
(a5) etching back the first insulating film using the first mask layer as an etching mask, and
wherein the step (b3) includes the steps of:
(b4) forming a second mask layer over the second insulating film; and
(b5) etching the second insulating film using the second mask layer as an etching mask.

3. The method of manufacturing the semiconductor device according to claim 2 ,
wherein, by performing the step (a5), a planarity of the upper surface of the first insulating film is improved, and
wherein, by performing the step (b5), a planarity of the upper surface of the second insulating film is improved.

4. The method of manufacturing the semiconductor device according to claim 2 ,
wherein the first insulating film includes a first resin film,
wherein, in the step (a5), the first resin film is etched back,
wherein the second insulating film includes a second resin film, and
wherein, in the step (b5), the second resin film is etched back.

5. The method of manufacturing the semiconductor device according to claim 4 ,
wherein each of the first and second resin films is made of polyimide.

6. The method of manufacturing the semiconductor device according to claim 1 ,
wherein, in the step (a3), the upper surface of the first insulating film is polished to be planarized, and
wherein, in the step (b3), the upper surface of the second insulating film is polished to be planarized.

7. The method of manufacturing the semiconductor device according to claim 6 ,
wherein, in the step (a3), the upper surface of the first insulating film is polished by a CMP method, and
wherein, in the step (b3), the upper surface of the second insulating film is polished by a CMP method.

8. The method of manufacturing the semiconductor device according to claim 6 ,
wherein the first insulating film includes a first silicon dioxide film,
wherein, in the step (a3), the first silicon dioxide film is polished,
wherein the second insulating film includes a second silicon dioxide film, and
wherein, in the step (b3), the second silicon dioxide film is polished.

9. The method of manufacturing the semiconductor device according to claim 1 ,
wherein the first insulating film is a film in an uppermost layer of the first semiconductor chip, and
wherein the second insulating film is a film in an uppermost layer of the second semiconductor chip.

10. The method of manufacturing the semiconductor device according to claim 1 ,
wherein the step (c) includes the steps of:
(c1) mounting the first semiconductor chip over a chip mounting portion; and
(c2) mounting the second semiconductor chip over the first semiconductor chip via the insulating sheet to stack the second semiconductor chip over the first semiconductor chip with the first insulating film of the first semiconductor chip and the second insulating film of the second semiconductor chip facing each other.

11. The method of manufacturing the semiconductor device according to claim 10 ,
wherein the first semiconductor chip has a plurality of first pads,
wherein the second semiconductor chip has a plurality of second pads,
the method further comprising the step of:
(d) after the step (c), electrically coupling a plurality of first external terminals to the first pads of the first semiconductor chip via a plurality of first conductive coupling members and electrically coupling a plurality of second external terminals to the second pads of the second semiconductor chip via a plurality of second conductive coupling members.

12. The method of manufacturing the semiconductor device according to claim 11 , further comprising the step of:
(e) after the step (d), forming a sealing portion which seals the first semiconductor chip, the second semiconductor chip, the insulating sheet, the chip mounting portion, the first conductive coupling members, the second conductive coupling members, the first external terminals, and the second external terminals.

Assignees

• Renesas Electronics Corp

Inventors

• Uchida Shinichi
• Kuramoto Takafumi
• Koh Risho

Classifications

• H10W72/5522

  comprising gold [Au] · CPC title

• H10P95/064

  the removal being chemical etching · CPC title

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P95/06

  Planarisation of inorganic insulating materials · CPC title

• H10P50/73

  using masks for insulating materials · CPC title