Ordering block copolymers

US9557640B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9557640-B2
Application numberUS-201514656753-A
CountryUS
Kind codeB2
Filing dateMar 13, 2015
Priority dateMar 15, 2014
Publication dateJan 31, 2017
Grant dateJan 31, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for ordering block copolymers including forming a first layer having a first preference mode; and providing a reactive agent in selected regions of the first layer that modifies the selected regions to a second preference mode, wherein the selected regions define other regions of the first layer retaining the first preference mode thereby forming an alignment layer for block copolymers.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for aligning and orienting block copolymers by patternwise photoexposure of reactive layers to form alignment layers having areas that are preferably wet by one block of a block copolymer and other areas that are either preferably wet by other blocks or not preferably wet by one or more of the blocks, comprising a) providing a substrate, a reactive layer on the substrate, and a block copolymer; b) exposing said reactive layer to irradiation under conditions such that a photogenerated species reacts with one or more components in the reactive layer, wherein the reactive layer undergoes a photopattemed reaction that produces a change in local surface energy or surface tension or wettability preference for any block of the block copolymer; and c) coating said reactive layer with said block copolymer such that the reactive layer is below the block copolymer. 2. The method of claim 1 , wherein the reactive layer is grafted or covalently bound to the substrate. 3. The method of claim 1 , wherein the reactive layer comprises polymer, said polymer comprising monomers, said monomers comprising chemical functionalities that react with photogenerated species, said photogenerated species selected from the group consisting of acid, base, and radicals, to produce a patterned change in surface energy or surface tension of the reactive layer, thus changing block copolymer wetting characteristics. 4. The method of claim 3 , wherein the acid is generated by photoacid generator or base is generated by photobase generator or radicals are generated by photoradical generator. 5. The method of claim 3 , further comprising after step b) and before step c), exposing said reactive layer to heat. 6. The method of claim 5 , wherein said monomers comprise maleic anhydride, 4-tert-butoxystyrene, and 3,5-di-tent-butylstyrene, wherein a chemical functionality on the 4-tert-butoxystyrene reacts with said photogenerated species to yield a phenol. 7. The method of claim 1 , wherein said irradiation of step b) creates photo-products that react with the reactive layer, wherein said photoproducts are generated in a layer adjacent to the reactive layer. 8. The method of claim 7 , wherein the photo-products migrate into the reactive layer to induce the patterned reaction in the reactive layer. 9. The method of claim 7 , wherein the photo-products diffuse in the reactive layer such that the chemically modified area with different surface energy or surface tension or wettability characteristics is smaller or larger than the area of the primary exposure. 10. The method of claim 1 , wherein the reactive layer comprises a polymer containing photoreactive groups, or polymer doped with photoreactive molecules, or any other polymeric or non-polymeric photoreactive substance. 11. A method for aligning and orienting block copolymers by pattemwise photoexposure of reactive layers to form alignment layers having areas that are preferably wet by one block of a block copolymer and other areas that are either preferably wet by other blocks or not preferably wet by one or more of the blocks, comprising a) providing a substrate, a reactive layer on the substrate, and a block copolymer, wherein the reactive layer comprises polymer, said polymer comprising monomers, said monomers comprising chemical functionalities; b) exposing said reactive layer to irradiation and heat under conditions such that a photogenerated species reacts with one or more of said chemical functionalities of said monomers in the reactive layer, wherein the reactive layer undergoes a photopatterned reaction that produces a change in local surface energy or surface tension or wettability preference for any block of the block copolymer; and c) coating said reactive layer with said block copolymer such that the reactive layer is below the block copolymer. 12. The method of claim 11 , wherein said monomers comprise maleic anhydride, 4-tert-butoxystyrene, and 3,5-di-tent-butylstyrene, wherein a chemical functionality on the 4-tert-butoxystyrene reacts with said photogenerated species to yield a phenol.

Assignees

Inventors

Classifications

  • G03F7/0002Primary

    Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

  • having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

  • Forming nanoscale microstructures using auto-arranging or self-assembling material · CPC title

  • Modified block copolymers · CPC title

  • G03F7/20Primary

    Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

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What does patent US9557640B2 cover?
A method for ordering block copolymers including forming a first layer having a first preference mode; and providing a reactive agent in selected regions of the first layer that modifies the selected regions to a second preference mode, wherein the selected regions define other regions of the first layer retaining the first preference mode thereby forming an alignment layer for block copolymers.
Who is the assignee on this patent?
Univ Texas, Board Of Regents Univ Of Texas System
What technology area does this patent fall under?
Primary CPC classification G03F7/0002. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 31 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).