Method of patterning block copolymer layer and patterned structure

Patent metadata

Field	Value
Publication number	US-9557639-B2
Application number	US-201314078921-A
Country	US
Kind code	B2
Filing date	Nov 13, 2013
Priority date	Jan 8, 2013
Publication date	Jan 31, 2017
Grant date	Jan 31, 2017

Abstract

A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r 1 , and the inner apex having a second curvature radius r 2 , respectively, and the width of the patterning area W, the first curvature radius r 1 and the second curvature radius r 2 , satisfy Inequation 1:

2
+

2

-

(

1
+

2

)

[

(

n
+
2

)

2

n
⁡

(

n
+
1

)

]

1
3

≤

r
1

-

r
2

W

≤

2
+

2

-

(

1
+

2

)

[

(

n
-
2

)

2

n
⁡

(

n
-
1

)

]

1
3

.

Inequation
⁢

⁢
1

First claim

What is claimed is:

1. A method of patterning a block copolymer layer, the method comprising:
providing a substrate with a guide pattern formed on a surface thereof;
forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer comprising a block copolymer; and
directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains,

wherein
the guide pattern includes a block copolymer patterning area having a 90-degree bending portion,
an outer apex and an inner apex of the 90-degree bending portion are each rounded,
the outer apex has a first curvature radius r 1 ,
the inner apex has a second curvature radius r 2 , and
a width of the block copolymer patterning area W, the first curvature radius r 1 , and the second curvature radius r 2 satisfy Inequation 1:

2
+

2

-

(

1
+

2

)

⁡

[

(

n
+
2

)

2

n
⁡

(

n
+
1

)

]

1
3

≤

r
1

-

r
2

W

≤

2
+

2

-

(

1
+

2

)

⁡

[

(

n
-
2

)

2

n
⁡

(

n
-
1

)

]

1
3

,

Inequation
⁢

⁢
1

wherein n is an even number and represents a number of interfaces of the discrete domains,
wherein the guide pattern comprises at least two bend pattern elements arranged parallel to one another, at least two jog pattern elements arranged parallel to one another, or a combination thereof,
wherein the block copolymer patterning area is defined by opposite side walls formed by the pattern elements,
wherein the width (W) of the block copolymer patterning area is a distance between the opposite side walls in a straight line portion of the guide pattern, and
wherein the discrete domains are formed in the block copolymer patterning area.

2. The method of claim 1 , wherein n is an even number of greater than or equal to 4, and W satisfies the equation:

W
=

n
2

⁢

λ
o

wherein λ o is a pattern period in a bulk phase of the block copolymer.

3. The method of claim 1 , wherein a length of a straight line W d connecting the inner and outer apexes of the 90-degree bending portion in the guide pattern is equal to the width of the patterning area W.

4. The method of claim 1 , wherein the guide pattern is formed by chemical patterning, topographical patterning, optical patterning, electrical patterning, mechanical patterning, or a combination thereof.

5. The method of claim 1 , wherein the substrate comprises an organic monomolecular layer or a polymer brush layer.

6. The method of claim 1 , wherein the discrete domains of the self-assembled block copolymer comprise a lamellar structure which is vertically oriented relative to the substrate, or a cylindrical structure which is horizontally oriented relative to the substrate.

7. The

Assignees

• Samsung Electronics Co Ltd
• Yonsei Univ Univ—Industry Foundation(Uif)
• Yonsei Univesity University-Industry Foundation(Uif)

Inventors

• Kim Mi-Jeong
• Han In Taek
• Huh June
• Jeong Seong-Jun
• Koh Haeng Deog
• Park Youn Jung

Classifications

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• B81C2201/0149

  Forming nanoscale microstructures using auto-arranging or self-assembling material · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• Y10T428/24802

  Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] · CPC title