Incorporation of bulk metal foils to increase toughness of polycrystalline diamond

US9555519B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9555519-B2
Application numberUS-201414547867-A
CountryUS
Kind codeB2
Filing dateNov 19, 2014
Priority dateDec 21, 2010
Publication dateJan 31, 2017
Grant dateJan 31, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A cutting element include a substrate and a diamond compact including at least two polycrystalline diamond portions separated by at least one metal carbide foil portion. The cutting element is made by placing diamond powder in a reaction container, placing a thin metal layer in the reaction container above or around the diamond powder and binder, placing additional diamond powder in the reaction container above or around the thin metal layer, and placing a pre-sintered substrate containing binder into the reaction container above all diamond powder and thin metal layer components. The assembled reaction container is put into a reactor and is subjected to a high-temperature high-pressure sintering process. The binder in the pre-sintered substrate sweeps through to sinter the first diamond portion, and then reacts with the thin metal layer to form a metal carbide, and then the binder continues to sweep through to sinter the second diamond portion.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of making a cutting element comprising: placing a first diamond powder in a reaction container; placing a thin metal layer in the reaction container in a first direction from or around the first diamond powder; placing a second diamond powder in the reaction container in the first direction from or around the thin metal layer, wherein the thin metal layer separates the first diamond powder from the second diamond powder; placing a pre-sintered substrate containing binder into the reaction container in the first direction from the first diamond powder and the second diamond powder and thin metal layer components; and putting the reaction container into a reactor and subjecting the reaction container to a high-temperature high-pressure (HTHP) sintering process in which the second diamond powder forms a first polycrystalline diamond portion and the first diamond powder forms a second polycrystalline diamond portion, wherein the thin metal layer forms a cup that separates the first diamond powder from the second diamond powder and surrounds the first diamond powder. 2. The method of claim 1 , wherein, during the HTHP sintering process, the binder in the pre-sintered substrate infiltrates or sweeps through the second diamond powder to react with the second diamond powder and to form an integral bond between the first polycrystalline diamond portion and the substrate, the binder further reacts with the thin metal layer to form a metal compound and sweeps into the first diamond powder to react with the first diamond powder and to form an integral bond with the metal compound and second polycrystalline diamond portion. 3. The method of claim 2 , wherein the metal compound comprises metal carbide. 4. The method of claim 3 , wherein the metal compound comprises tungsten carbide. 5. The method of claim 1 , wherein the hinder sweeps into the first diamond powder at a time subsequent to the binder sweeping into the second diamond powder and the binder reacting with the thin metal layer. 6. The method of claim 1 , wherein the first portion of the diamond powder and the second portion of the diamond powder are different grades of polycrystalline diamond. 7. The method of claim 1 , wherein the first portion of the diamond powder and additional diamond powder are the same grades of polycrystalline diamond. 8. The method of claim 1 , further comprising: placing a second thin metal layer in the reaction container in the first direction from or around the second diamond powder; and placing a third diamond powder in the reaction container in the first direction from or around the second thin metal layer, wherein the thin metal layer forms a cup that separates the second diamond powder from the third diamond powder and surrounds the second diamond powder, wherein the pre-sintered substrate is positioned in the reaction container in the first direction from the first diamond powder, the second diamond powder, and the third diamond powder and the thin metal layer components. 9. The method of claim 1 , wherein the thin metal layer comprises molybdenum, niobium, zirconium, or tantalum or combinations thereof. 10. The method of claim 1 , wherein the binder comprises Si, Co, Fe, or Ni, or alloys or combinations thereof. 11. The method of claim 1 , wherein the thin metal layer is formed from a metal powder. 12. The method of claim 1 , wherein the thin metal layer is formed from a metal foil. 13. A method of making a cutting element comprising: placing a first diamond powder in a reaction container; placing a thin metal layer in the reaction container in a first direction from or around the first diamond powder; placing a second diamond powder in the reaction container in the first direction from or around the thin metal layer wherein the thin metal layer separates the first diamond powder from the second diamond powder; placing a pre-sintered substrate containing binder into the reaction container in the first direction from the first diamond powder and the second diamond powder and thin metal layer components; and putting the reaction container into a reactor and subjecting the reaction container to a high-temperature high-pressure (HTHP) sintering process in which the second diamond powder forms a first polycrystalline diamond portion and the first diamond powder forms a second polycrystalline diamond portion, wherein the thin metal layer forms a pouch that separates the first diamond powder from the second diamond powder and surrounds the first diamond powder. 14. A method of making a cutting element comprising: placing a first diamond powder in a reaction container; placing a thin metal layer in the reaction container in a first direction from or around the first diamond powder; placing a second diamond powder in the reaction container in the first direction from or around the thin metal layer, wherein the thin metal layer separates the first diamond powder from the second diamond powder; placing a pre-sintered substrate containing binder into the reaction container in the first direction from the first diamond powder and the second diamond powder and thin metal layer components; and putting the reaction container into a reactor and subjecting the reaction container to a high-temperature high-pressure (HTHP) sintering process in which the second diamond powder forms a first polycrystalline diamond portion and the first diamond powder forms a second polycrystalline diamond portion, wherein the thin metal layer comprises molybdenum, niobium, zirconium, or tantalum or combinations thereof.

Assignees

Inventors

Classifications

  • Diamond · CPC title

  • with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts · CPC title

  • Segments of abrasive wheels · CPC title

  • characterised by support details, e.g. the substrate construction or the interface between the substrate and the cutting element · CPC title

  • Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product · CPC title

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What does patent US9555519B2 cover?
A cutting element include a substrate and a diamond compact including at least two polycrystalline diamond portions separated by at least one metal carbide foil portion. The cutting element is made by placing diamond powder in a reaction container, placing a thin metal layer in the reaction container above or around the diamond powder and binder, placing additional diamond powder in the reactio…
Who is the assignee on this patent?
Diamond Innovations Inc
What technology area does this patent fall under?
Primary CPC classification B24D3/06. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Jan 31 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).