Flared laser oscillator waveguide

Patent metadata

Field	Value
Publication number	US-9553424-B2
Application number	US-201514855710-A
Country	US
Kind code	B2
Filing date	Sep 16, 2015
Priority date	Apr 9, 2013
Publication date	Jan 24, 2017
Grant date	Jan 24, 2017

Abstract

A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations.

First claim

What is claimed is:

1. An apparatus comprising:
a semiconductor diode laser including a current injection region extending between a high reflector and a partial reflector so as to define a laser oscillator;
wherein the high reflector has a multimode width and the ratio of a width of the partial reflector to the multimode width of the high reflector is n:1, where n>1;
wherein the current injection region includes a first positive curving side portion having a positive curve defined by a cavity width between the first positive curving side portion and an optical axis situated in the cavity perpendicular to the partial reflector and high reflector, the cavity width with respect to a cavity length having a positive second derivative between a first position situated between the high reflector and the partial reflector and a second position nearer the partial reflector relative to the first position.

2. The apparatus of claim 1 , wherein the the first positive curving side portion extends from the high reflector to the partial reflector.

3. The apparatus of claim 2 , wherein the cavity width varies non-monotonically between the partial reflector and the high reflector.

4. The apparatus of claim 1 , further comprising a first negative curving side portion situated opposite the optical axis to the first positive curving side portion and having a negative curve defined by a cavity width between the first negative curving side portion and the optical axis, the cavity width associated with the first negative curving side portion with respect to the cavity length having a negative second derivative between the first position and the second position.

5. The apparatus of claim 1 , wherein the current injection region includes a first negative curving side portion on the same side of the optical axis as the first positive curving side portion and having a negative curve defined by a cavity width between the first negative curving side portion and the optical axis, the cavity width associated with the first negative curving side portion with respect to the cavity length having a negative second derivative between a first position of the first negative curving side portion situated between the high reflector and the partial reflector and a second position of the first negative curving side portion nearer the partial reflector relative to the first position of the first negative curving side portion.

6. The apparatus of claim 5 , wherein the first position of the first negative curving side portion adjoins the second position of the first positive curving side portion.

7. The apparatus of claim 6 , further comprising a second positive curving side portion and a second negative curving side portion both situated opposite the optical axis, the second positive curving side portion and second negative curving side portion each having respective first and second positions with each second position situated nearer the partial reflector than a corresponding first position and with the second position of the second positive curving side portion adjoining the first position of the second negative curving side portion.

8. The apparatus of claim 5 , wherein the first position of the first positive curving side portion adjoins the second position of the first negative curving side portion.

9. The apparatus of claim 8 , further comprising a second positive curving side portion and a second negative curving side portion situated opposite the optical axis to the first positive curving side portion and first negative curving side portion.

10. The apparatus of claim 8 , further comprising a straight side portion situated opposite the optical axis and defined by a cavity width between the straight side portion and the optical axis, the cavity width associated with the straight side portion with respect to the cavity length having a positive first derivative between the first position of the first negative curving side portion and the second position of the first positive curving side portion.

11. The apparatus of claim 1 , wherein the high reflector, partial reflector, or both are cleaved at a non-perpendicular angle with respect to an optical axis parallel to the length of the current injection region.

12. The apparatus of claim 1 , further comprising a distributed Bragg reflector situated at the high reflector so as to stabilize the wavelength of the semiconductor diode laser.

13. The apparatus of claim 12 , further comprising an end portion extending from a plane of the laser oscillator having the multimode width of the high reflector and wherein the distributed Bragg reflector is situated in the end portion.

14. The apparatus of claim 1 , wherein the current injection region is bell-shaped.

15. The apparatus of claim 1 , wherein the current injection region includes a narrow width region and a pair of opposite width regions adjoining the narrow width region, the narrow width region having a minimum width that is smaller than respective minimum widths of the opposite adjoining width regions, wherein the minimum width of the narrow width region is a multimode width;
wherein at least one of the opposite width regions corresponds to the first positive curving side portion.

16. The apparatus of claim 1 , further comprising at least one scattering element situated in the current injection region to introduce loss associated with one or more selected optical modes supported by the current injection region.

17. An apparatus, comprising:
a semiconductor diode laser including a current injection region extending between a high reflector and a partial reflector so as to define a laser oscillator;
wherein the high reflector has a multimode width and the ratio of a width of the partial reflector to the multimode width of the high reflector is n:1, where n>1;
wherein the current injection region includes a narrow width region and a pair of opposite width regions adjoining the narrow width region, the narrow width region having a minimum width that is smaller than respective minimum widths of the opposite adjoining width regions, wherein the minimum width of the narrow width region is a multimode width.

18. An apparatus, comprising:
a semiconductor diode laser including a current injection region extending between a high reflector and a partial reflector so as to define a laser oscillator;
wherein the high reflector has a multimode width and the ratio of a width of the partial reflector to the multimode width of the high reflector is n:1, where n>1;
wherein the current injection region includes a first negative curving side portion having a negative curve defined by a cavity width between the first negative curving side portion and an optical axis situated in the cavity perpendicular to the partial reflector and high reflector, the cavity width with respect to a cavity length having a negative second derivative between a first position situated between the high reflector and the partial reflector and a second position nearer the partial reflector relative to the first position.

19. The apparatus of claim 18 , wherein the first negative curving side portion extends from the high reflector to the partial reflector.

20. The apparatus of claim 18 , wherein the second derivative of the cavity width with respect to the cavity length asymptotes to zero at the second position.

21. The apparatus of claim 18 , further comprising a second negative curving side portion situated opposite the optical axis to the first negative curving side portion.

Assignees

• Nlight Photonics Corp
• Nlight Inc

Inventors

• Kanskar Manoj

Classifications

• H01S5/1237

  Lateral grating, i.e. grating only adjacent ridge or mesa · CPC title

• H01S5/2036 Primary

  Broad area lasers · CPC title

• H01S5/1014

  Tapered waveguide, e.g. spotsize converter (H01S5/1064 takes precedence) · CPC title

• H01S5/1203

  over only a part of the length of the active region · CPC title

• H01S5/0287

  Facet reflectivity · CPC title