Method for alignment of microwires

US9553223B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9553223-B2
Application numberUS-201414163745-A
CountryUS
Kind codeB2
Filing dateJan 24, 2014
Priority dateJan 24, 2013
Publication dateJan 24, 2017
Grant dateJan 24, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of aligning microwires includes modifying the microwires so they are more responsive to a magnetic field. The method also includes using a magnetic field so as to magnetically align the microwires. The method can further include capturing the microwires in a solid support structure that retains the longitudinal alignment of the microwires when the magnetic field is not applied to the microwires.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of forming a device, comprising: modifying silicon microwires so as to increase the responsivity of the silicon microwires to a magnetic field; using the magnetic field to longitudinally align the silicon microwires; and at least partially embedding the aligned silicon microwires in a polymer to maintain longitudinal alignment of the silicon microwires. 2. The method of claim 1 , wherein using the magnetic field includes applying the magnetic field to the microwires such that more than 90% of the microwires each has a longitudinal axis that is within 7° of the direction of the magnetic field. 3. The method of claim 1 , wherein the longitudinal axis of less than 90% of the microwires was within 7° of the direction of the magnetic field before using the magnetic field. 4. The method of claim 1 , wherein modifying the microwires includes forming a coating of a material on a body of the microwire. 5. The method of claim 4 , further comprising: removing at least a portion of the coating after using the magnetic field. 6. The method of claim 4 , wherein the coating is more than 20 nm thick. 7. The method of claim 4 , wherein coating includes a ferromagnetic material. 8. The method of claim 7 , wherein forming the coating includes electroplating or sputtering the microwires with the ferromagnetic material. 9. The method of claim 8 , wherein the ferromagnetic material includes at least one components selected from nickel and cobalt. 10. The method of claim 1 , further comprising: placing the microwires in a liquid so as to form an alignment liquid before using the magnetic field. 11. The method of claim 10 , further comprising: placing the alignment liquid on a substrate before using the magnetic field. 12. The method of claim 11 , further comprising: making a surface of the substrate hydrophilic before placing the placing the alignment liquid on the surface of the substrate. 13. The method of claim 11 , wherein the electrical field is used such that ends of the aligned microwires are pulled into contact with the surface of the substrate. 14. The method of claim 11 , wherein the alignment liquid is placed on a surface of the substrate such that less than 90% of the microwires was within 7° of the direction of the magnetic field before using the magnetic field. 15. The method of claim 14 , wherein the magnetic field causes the microwires to re-arrange themselves in the alignment liquid such that more than 90% of the microwires have a longitudinal axis that is within 7° of the line that is perpendicular to the surface of the substrate. 16. The method of claim 1 , further comprising: capturing the longitudinally aligned microwires in a solid support that holds the microwires in a longitudinally aligned configuration when the magnetic field is not applied to the microwires. 17. The method of claim 16 , wherein modifying the microwires includes forming a coating of a material on a body of the microwire, and further comprising: removing at least a portion of the coating after capturing the longitudinally aligned microwires in the solid support. 18. The method of claim 1 , wherein the microwires have a diameter that is less than 2 μm and an aspect ratio that is greater than 10.

Assignees

Inventors

Classifications

  • using electric currents {, e.g. electroplating} · CPC title

  • Electricity · mapped topic

  • Electromagnet, transformer or inductor · CPC title

  • H10F77/14Primary

    Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies · CPC title

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What does patent US9553223B2 cover?
A method of aligning microwires includes modifying the microwires so they are more responsive to a magnetic field. The method also includes using a magnetic field so as to magnetically align the microwires. The method can further include capturing the microwires in a solid support structure that retains the longitudinal alignment of the microwires when the magnetic field is not applied to the m…
Who is the assignee on this patent?
California Inst Of Techn
What technology area does this patent fall under?
Primary CPC classification H01L31/0352. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 24 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).