Semiconductor component with an emitter control electrode

Patent metadata

Field	Value
Publication number	US-9553178-B2
Application number	US-97775510-A
Country	US
Kind code	B2
Filing date	Dec 23, 2010
Priority date	Dec 28, 2009
Publication date	Jan 24, 2017
Grant date	Jan 24, 2017

Abstract

A semiconductor component includes a first emitter zone of a first conductivity type, a second emitter zone of a second conductivity type, a first base zone arranged between the first and second emitter zones and a first control structure. The first control structure includes a control electrode arranged adjacent the first emitter zone, the control electrode being insulated from the first emitter zone by a first dielectric layer and extending in a current flow direction of the semiconductor component. The first control structure includes a first control connection and at least one first connection zone arranged between the first control connection and the control electrode and comprising a semiconductor material.

First claim

What is claimed is:

1. A semiconductor component, comprising:
a semiconductor body having opposing first and second main sides, the first and second main sides being bounding surfaces of the semiconductor body;
a first emitter zone of a first conductivity type arranged in the semiconductor body and extending to the first main side of the semiconductor body;
a first connection electrode contact-connected to the first emitter zone at the first main side of the semiconductor body, the first connection electrode comprising a metal;
a second emitter zone of a second conductivity type different from the first conductivity type arranged in the semiconductor body and extending to the second main side of the semiconductor body;
a first base zone arranged between the first and second emitter zones and extending to the second main side of the semiconductor body; and
a first control structure insulated from the first base zone and comprising:
a control electrode arranged adjacent the first emitter zone in the semiconductor body, the control electrode being insulated from the first emitter zone by a first dielectric layer and extending in a current flow direction of the semiconductor component from along part of the first base zone and along the first emitter zone as far as or into the first connection electrode at the first main side of the semiconductor body;
a first control connection at the second main side of the semiconductor body; and
at least one first connection zone arranged between the first control connection and the control electrode and comprising a semiconductor material,
wherein the first control structure extends uninterrupted from a first plane coplanar with the first main side of the semiconductor body to a second plane coplanar with the second main side of the semiconductor body.

2. The semiconductor component as claimed in claim 1 , wherein the first base zone is more lightly doped than the first emitter zone and/or the second emitter zone.

3. The semiconductor component as claimed in claim 1 , wherein the control electrode is arranged adjacent the first base zone and insulated from the first base zone by a second dielectric layer.

4. The semiconductor component as claimed in claim 1 , wherein the at least one first connection zone and the control electrode are formed by a common semiconductor zone.

5. The semiconductor component as claimed in claim 1 , wherein the control electrode comprises a metal or a doped polycrystalline semiconductor material.

6. The semiconductor component as claimed in claim 1 , wherein the first connection zone comprises a monocrystalline semiconductor material.

7. The semiconductor component as claimed in claim 6 , wherein the first connection zone is doped so that the first connection zone is fully depletable.

8. The semiconductor component as claimed in claim 6 , wherein the first control structure further comprises a second connection zone doped complementarily to the at least one first connection zone and arranged at least in sections between the at least one first connection zone and the first control connection.

9. The semiconductor component as claimed in claim 1 , wherein the at least one first connection zone is of the second conductivity type.

10. The semiconductor component as claimed in claim 1 , wherein the semiconductor component is an insulated gate bipolar transistor and the first base zone is of the second conductivity type, the semiconductor component further comprising:
a second control structure comprising:
a second base zone of the first conductivity type arranged between the first base zone and the second emitter zone; and
a gate electrode insulated from the second base zone by a second dielectric layer, the gate electrode extending adjacent the second base zone from the second emitter zone as far as the first base zone.

Assignees

• Hirler Franz
• Mauder Anton
• Pfirsch Frank
• Schulze Hans-Joachim
• Infineon Technologies Austria Ag

Inventors

• Hirler Franz
• Mauder Anton
• Pfirsch Frank
• Schulze Hans-Joachim

Classifications

• H01L29/4236

  Electricity · mapped topic

• H01L29/0696

  Electricity · mapped topic

• H01L29/7397 Primary

  Electricity · mapped topic

• H10D64/513

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title

• H10D62/127

  of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs · CPC title