STT-MRAM cell structure incorporating piezoelectric stress material

Patent metadata

Field	Value
Publication number	US-9552858-B2
Application number	US-201514947978-A
Country	US
Kind code	B2
Filing date	Nov 20, 2015
Priority date	Sep 30, 2008
Publication date	Jan 24, 2017
Grant date	Jan 24, 2017

Abstract

A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell.

First claim

What is claimed is:

1. A method for reducing a critical switching current density of a memory cell during operation comprising:
generating a transient stress in a free ferromagnetic layer of the memory cell by generating a parasitic electric field to activate a piezoelectric material of the memory cell, wherein generating the transient stress decreases an energy barrier of the free ferromagnetic layer.

2. The method of claim 1 , wherein generating the transient stress reduces a magnetic anisotropy field of the memory cell.

3. The method of claim 2 , wherein generating the transient stress introduces an equivalent magnetic field component to the magnetic anisotropy field.

4. The method of claim 1 , wherein generating the transient stress changes the alignment of spin-up and spin-down subbands in materials of the free ferromagnetic layer to adjust magnetization of the free ferromagnetic layer.

5. The method of claim 1 , wherein generating the transient stress comprises applying a voltage to the piezoelectric material.

6. The method of claim 1 , wherein generating the transient stress comprises applying a voltage across a memory cell stack including the piezoelectric material of the memory cell.

7. A method for reducing a critical switching current density of a memory cell during operation comprising:
generating a transient stress in a free ferromagnetic layer of the memory cell by applying a voltage to a piezoelectric material of the memory cell, wherein generating the transient stress decreases an energy barrier of the free ferromagnetic layer.

8. A method for reducing a critical switching current density of a memory cell during operation comprising:
generating a transient stress in a free ferromagnetic layer of the memory cell by applying a voltage to a piezoelectric material of the memory cell, wherein applying the voltage to the piezoelectric material comprises applying the voltage to (TaSe4)2I, multi-layered AlxGal-xAs/GaAs, BaTiO3/VGCF/CPE composites, other piezoelectric and conductive material composites, or any combinations thereof.

9. A method for reducing a critical switching current density of a memory cell during operation comprising:
generating a transient stress in a free ferromagnetic layer of the memory cell by applying a voltage to a piezoelectric material of the memory cell, wherein applying the voltage to the piezoelectric material comprises applying the voltage to berlinite (AlPO 4 ), quartz, gallium orthophosphate (GaPO 4 ), langasite (La 3 Ga 5 SiO 14 ), ceramics with perovskite, tungsten-bronze structures, barium titanate (BaTiO 3 ), SrTiO3, bismuth ferrite (BiFeO 3 ), lead zirconate titanate (Pb[Zr x Ti 1-x ]O 3 0<x<1), Pb 2 KNb 5 O 15 , lead titanate (PbTiO 3 ), lithium tantalate (LiTaO 3 ), sodium tungstate (Na x WO 3 ), potassium niobate (KNbO 3 ), lithium niobate (LiNbO 3 ), or Ba 2 NaNb 5 O 5 , ZnO, AlN, polyvinylidene fluoride (PVDF), lanthanum gallium silicate, potassium sodium tartrate, sodium potassium niobate (KNN), other piezoelectric and insulative material composites, or any combinations thereof.

10. The method of claim 7 , wherein applying the voltage comprises applying a programming voltage.

11. The method of claim 10 , wherein applying the programming voltage comprises applying the programming voltage across a memory cell stack including the piezoelectric material of the memory cell.

12. The method of claim 11 , wherein applying the programming voltage comprises applying the programming voltage to a bit line and a word line of a memory array coupled to the memory cell stack.

13. The method of claim 12 , wherein applying the programming voltage comprises applying the programming voltage to the memory cell stack from the word line through an access transistor coupled to the memory cell stack.

14. A method for reducing a critical switching current density of a memory cell during operation comprising:
generating a voltage across a memory cell stack;
generating a transient stress from a piezoelectric material of the memory cell stack to a free layer of the memory cell stack; and
lowering the energy barrier of the free layer for magnetization reversal.

15. The method of claim 14 , wherein generating the transient stress comprises generating the transient stress from a piezoelectric layer of the memory cell stack disposed directly on and parallel to the free layer of the memory cell stack.

16. The method of claim 14 , wherein generating the transient stress comprises generating the transient stress from the piezoelectric material of the memory cell stack formed directly adjacent and perpendicular to the free layer of the memory cell stack.

17. The method of claim 14 , wherein generating the transient stress comprises generating the transient stress from a circular piezoelectric layer of the memory cell stack.

18. The method of claim 14 , wherein generating the voltage across the memory cell stack comprises applying a programming voltage to a bit line and a source line of the memory cell.

19. The method of claim 14 , wherein generating the transient stress comprises generating a parasitic electric field from the voltage.

Assignees

• Micron Technology Inc
• Micron Technology Inc

Inventors

• Liu Jun
• Kramer Steve
• Sandhu Gurtej

Classifications

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/08

  Electricity · mapped topic

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C11/16 Primary

  using elements in which the storage effect is based on magnetic spin effect · CPC title

• H01L27/228

  Electricity · mapped topic