Devices including a multilayer gas barrier layer

Patent metadata

Field	Value
Publication number	US-9552833-B2
Application number	US-201514918694-A
Country	US
Kind code	B2
Filing date	Oct 21, 2015
Priority date	Nov 11, 2014
Publication date	Jan 24, 2017
Grant date	Jan 24, 2017

Abstract

Devices that include a near field transducer (NFT); a multilayer gas barrier layer positioned on at least a portion of the NFT, the multilayer gas barrier layer including at least a first and a second sublayer, where the second gas barrier sublayer is positioned on the first gas barrier sublayer, the first gas barrier sublayer is positioned adjacent the NFT and the second gas barrier sublayer is positioned adjacent the wear resistant layer, the first and second sublayers independently have thicknesses from 0.01 nm to 5 nm; and a wear resistance layer positioned on at least a portion of the gas barrier layer.

First claim

What is claimed is:

1. A device comprising:
a near field transducer (NFT);
a multilayer gas barrier layer positioned on at least a portion of the NFT,
the multilayer gas barrier layer comprising at least a first and a second sublayer, where the second gas barrier sublayer is positioned on the first gas barrier sublayer, the first gas barrier sublayer is positioned adjacent the NFT and the second gas barrier sublayer is positioned adjacent the wear resistant layer, the first and second sublayers independently have thicknesses from 0.01 nm to 5 nm; and
a wear resistance layer positioned on at least a portion of the gas barrier layer.

2. The device according to claim 1 , wherein the first and second sublayers are made of the same material.

3. The device according to claim 1 , wherein the first and second sublayers are made of different materials.

4. The device according to claim 1 , wherein the first and second sublayers independently comprise oxides, nitrides, carbides, silicides, borides, fluorides, metals, or combinations thereof.

5. The device according to claim 1 , wherein the first and second sublayers independently comprise tantalum oxide (TaO), chromium oxide (CrO), or combinations thereof.

6. The device according to claim 1 , wherein the first and second sublayers independently comprise titanium aluminum oxide (TiAlO), tantalum aluminum oxide (TaAlO), tantalum silicon oxide (TaSiO), titanium aluminum silicon oxide (TiAlSiO), or combinations thereof.

7. The device according to claim 1 , wherein the first and second sublayers independently comprise aluminum nitride (AlN), tantalum nitride (TaN), or some combination thereof.

8. The device according to claim 1 , wherein the first and second sublayers independently comprise titanium aluminum nitride (TiAlN), titanium silicon nitride (TiSiN), aluminum silicon nitride (AlSiN), tantalum silicon nitride (TaSiN), tantalum aluminum nitride (TaAlN), carbon silicon nitride (CSiN), titanium aluminum silicon nitride (TiAlSiN), or combinations thereof.

9. The device according to claim 1 , wherein the first and second sublayers independently comprise one or more fluorides.

10. The device according to claim 1 , wherein the first and second sublayers independently comprise chromium fluoride (CrF 2 ), magnesium fluoride (MgF 2 ), silicon fluoride (SiF), or combinations thereof.

11. The device according to claim 1 , wherein the first and second sublayers independently comprise one or more borides.

12. The device according to claim 1 , wherein the first and second sublayers independently comprise titanium boride (TiB 2 ), chromium boride (CrB), zirconium boride (ZrB), or combinations thereof.

13. The device according to claim 1 , wherein the first and second sublayers independently comprise silicon aluminum oxy nitride (SiAlON), titanium silicon oxy nitride (TiSiON), titanium aluminum silicon oxy nitride (TiAlSiON), tantalum silicon oxy nitride (TaSiON), titanium aluminum oxy nitride (TiAlON), tantalum aluminum oxy nitride (TaAlON), tantalum oxy nitride (TaON), or combinations thereof.

14. The device according to claim 1 , wherein the first and second sublayers independently comprise titanium (Ti), chromium (Cr), niobium (Nb), hafnium (Hf), nickel (Ni), zirconium (Zr), or combinations thereof.

15. The device according to claim 1 further comprising a NFT adhesion layer and a wear resistance adhesion layer, wherein the NFT adhesion layer is positioned between the NFT and the multilayer gas barrier layer and the wear resistance adhesion layer is positioned between the multilayer gas barrier layer and the wear resistance layer.

16. A device comprising:
a near field transducer (NFT);
a multilayer gas barrier layer positioned on at least a portion of the NFT,
the multilayer gas barrier layer comprising at least a first and a second sublayer, where the second gas barrier sublayer is positioned on the first gas barrier sublayer, the first gas barrier sublayer is positioned adjacent the NFT and the second gas barrier sublayer is positioned adjacent the wear resistant layer, the first and second sublayers independently comprise a fluoride or a metal; and
a wear resistance layer positioned on at least a portion of the gas barrier layer.

17. The device according to claim 16 , wherein the first and second sublayers independently have thicknesses from 0.01 nm to 5 nm.

18. The device according to claim 16 , wherein the first and second sublayers independently comprise chromium fluoride (CrF 2 ), magnesium fluoride (MgF 2 ), silicon fluoride (SiF), or combinations thereof.

19. The device according to claim 16 , wherein the first and second sublayers independently comprise titanium (Ti), chromium (Cr), niobium (Nb), hafnium (Hf), nickel (Ni), zirconium (Zr), or combinations thereof.

20. A device comprising:
a near field transducer (NFT);
a multilayer gas barrier layer positioned on at least a portion of the NFT,
the multilayer gas barrier layer comprising at least a first and a second sublayer, where the second gas barrier sublayer is positioned on the first gas barrier sublayer, the first gas barrier sublayer is positioned adjacent the NFT and the second gas barrier sublayer is positioned adjacent the wear resistant layer, the first and second sublayers independently comprise a fluoride or a metal;
a wear resistance layer positioned on at least a portion of the gas barrier layer; and
a NFT adhesion layer positioned between the multilayer gas barrier layer and the NFT.

Assignees

• Seagate Technology Llc

Inventors

• Cheng Yuhang
• Wierman Kurt W
• Seigler Michael
• Franzen Scott

Classifications

• G11B5/40

  Protective measures on heads, e.g. against excessive temperature  (G11B5/31 takes precedence; protection against wear G11B5/255  {; protective structure of the head: see under structures, e.g. G11B5/3106}) · CPC title

• G11B5/255

  comprising means for protection against wear {(in thin film structures G11B5/3106)} · CPC title

• G11B5/3136

  for reducing the pole-tip-protrusion at the head transducing surface, e.g. caused by thermal expansion of dissimilar materials · CPC title

• G11B5/314 Primary

  where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers (G11B5/3196 takes precedence) · CPC title

• G11B2005/0021

  Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal · CPC title