Photoelectrode used for carbon dioxide reduction and method for reducing carbon dioxide using the photoelectrode

US9551077B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9551077-B2
Application numberUS-201414466170-A
CountryUS
Kind codeB2
Filing dateAug 22, 2014
Priority dateAug 27, 2012
Publication dateJan 24, 2017
Grant dateJan 24, 2017

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Abstract

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Disclosed is an anode electrode including a nitride semiconductor layer. This nitride semiconductor layer includes an Al x Ga 1-x N layer (0<x≦0.25), an Al y Ga 1-y N layer (0≦y≦x), and a GaN layer. The Al y Ga 1-y N layer is interposed between the Al x Ga 1-x N layer and the GaN layer. The value of x is fixed in the thickness direction of the Al x Ga 1-x N layer. The value of y decreases from the interface with the Al x Ga 1-x N layer f toward the interface with the GaN layer. The Al x Ga 1-x N layer is irradiated with light having a wavelength of 360 nm or less so as to reduce carbon dioxide.

First claim

Opening claim text (preview).

What is claimed is: 1. A photoelectrode used to reduce carbon dioxide by light energy, comprising a region including a nitride semiconductor layer in which a first aluminum gallium nitride layer, composition formula of which is Al x Ga l-x N, where a value of x representing a composition ratio of Al is a fixed value that satisfies 0<x≦0.25, a second aluminum gallium nitride layer, composition formula of which is Al y Ga l-y N, where a value of y representing a composition ratio of Al is a variable value that satisfies 0≦y≦x, and a gallium nitride layer, composition formula of which is GaN, are laminated in this order from a surface of the photoelectrode to be irradiated with light, wherein the value of y in the second aluminum gallium nitride layer changes, without any increase, from an interface with the first aluminum gallium nitride layer toward an interface with the gallium nitride layer. 2. The photoelectrode according to claim 1 , wherein the value of x in the first aluminum gallium nitride layer of the photoelectrode is in a range of 0.05≦x≦0.15. 3. The photoelectrode according to claim 1 , wherein the gallium nitride layer of the photoelectrode is n-type or n + -type. 4. The photoelectrode according to claim 1 , wherein an entire surface or a part of the surface of the first aluminum gallium nitride layer of the photoelectrode is coated with at least nickel oxide. 5. The photoelectrode according to claim 4 , wherein the nickel oxide is in the form of fine particles. 6. A method for reducing carbon dioxide by light energy, the method comprising the steps of: (a) preparing a carbon dioxide reduction device including a cathode chamber, an anode chamber, a proton conducting membrane, a cathode electrode, and an anode electrode, wherein the anode electrode is a photoelectrode that includes a region including a nitride semiconductor layer in which a first aluminum gallium nitride layer, composition formula of which is Al x Ga 1-x N, where a value of x representing a composition ratio of Al is a fixed value that satisfies 0<x≦0.25, a second aluminum gallium nitride layer, composition formula of which is Al y Ga 1-y N, where a value of y representing a composition ratio of Al is a variable value that satisfies 0≦y≦x, and a gallium nitride layer, composition formula of which is GaN, are laminated in this order from a surface of the photoelectrode to be irradiated with light, wherein the value of y in the second aluminum gallium nitride layer changes, without any increase, from an interface with the first aluminum gallium nitride layer toward an interface with the gallium nitride layer, a first electrolytic solution is contained in the cathode chamber, a second electrolytic solution is contained in the anode chamber, the cathode electrode is in contact with the first electrolytic solution, the anode electrode is in contact with the second electrolytic solution, the proton conducting membrane is interposed between the cathode chamber and the anode chamber, the first electrolytic solution contains carbon dioxide, the cathode electrode is electrically connected to the anode electrode, and a power source that is electrically connected to the cathode electrode and the anode electrode is not provided between the cathode electrode and the anode electrode; and (b) irradiating the anode electrode with light having a wavelength of 360 nm or less so as to reduce, at the cathode electrode, the carbon dioxide contained in the first electrolytic solution. 7. The method according to claim 6 , wherein the cathode electrode is a metal electrode. 8. The method according to claim 7 , wherein the cathode electrode as the metal electrode contains copper or a copper compound. 9. The method according to claim 7 , wherein the cathode electrode as the metal electrode contains indium or an indium compound. 10. The method according to claim 6 , wherein the first electrolytic solution is an aqueous potassium bicarbonate solution. 11. The method according to claim 6 , wherein the first electrolytic solution is an aqueous potassium chloride solution or an aqueous sodium chloride solution. 12. The method according to claim 6 , wherein the second electrolytic solution is an aqueous sodium hydroxide solution. 13. The method according to claim 6 , wherein in the step (b), the carbon dioxide reduction device is placed at room temperature and under atmospheric pressure. 14. The method according to claim 6 , wherein in the step (b), at least one of alcohol, aldehyde, formic acid, carbon monoxide, and hydrocarbon is obtained from the carbon dioxide.

Assignees

Inventors

Classifications

  • C07C51/00Primary

    Preparation of carboxylic acids or their salts, halides or anhydrides (of acids by hydrolysis of oils, fats or waxes C11C) · CPC title

  • with gallium, indium or thallium · CPC title

  • Chemistry & Metallurgy · mapped topic

  • Chemistry & Metallurgy · mapped topic

  • Operations & Transport · mapped topic

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What does patent US9551077B2 cover?
Disclosed is an anode electrode including a nitride semiconductor layer. This nitride semiconductor layer includes an Al x Ga 1-x N layer (0<x≦0.25), an Al y Ga 1-y N layer (0≦y≦x), and a GaN layer. The Al y Ga 1-y N layer is interposed between the Al x Ga 1-x N layer and the GaN layer. The value of x is fixed in the thickness direction of the Al x Ga 1-x N layer. The value of y decreases from …
Who is the assignee on this patent?
Panasonic Corp, Panasonic Ip Man Co Ltd
What technology area does this patent fall under?
Primary CPC classification C07C51/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 24 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).